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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

Robust quantum dot exciton preparation via adiabatic passage with frequency-swept laser pulses

Bernhard Urbaszek, Claire‐Marie Simon, Thomas Belhadj, B. Chatel, Th. Amand, Paul A. Dalgarno, O. Krebs, Richard John Warburton, Aristide Lemaître, X. Marie, P. Renucci

Published Feb 10, 2011• 0 citations
Publisher

Abstract

The energy states in semiconductor quantum dots are discrete as in atoms, and quantum states can be coherently controlled with resonant laser pulses. Long coherence times allow the observation of Rabi-flopping of a single dipole transition in a solid state device, for which occupancy of the upper state depends sensitively on the dipole moment and the excitation laser power. We report on the robust preparation of a quantum state using an optical technique that exploits rapid adiabatic passage from the ground to an excited state through excitation with laser pulses whose frequency is swept through the resonance.

DOI
10.1117/12.877291

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The energy states in semiconductor quantum dots are discrete as in atoms, and quantum states can be coherently controlled with resonant laser pulses. Long coherence times allow the observation of Rabi-flopping of a single dipole transition in a solid state device, for which occupancy of the upper state depends sensitively on the dipole moment and the excitation laser power. We report on the robust preparation of a quantum state using an optical technique that exploits rapid adiabatic passage from the ground to an excited state through excitation with laser pulses whose frequency is swept through the resonance.
The energy states in semiconductor quantum dots are discrete as in atoms, and quantum states can be coherently controlled with resonant laser pulses. Long coherence times allow the observation of Rabi flopping of a single dipole transition in a solid state device, for which occupancy of the upper state depends sensitively on the dipole moment and the excitation laser power. We report on the robust population inversion in a single quantum dot using an optical technique that exploits rapid adiabatic passage from the ground to an excited state through excitation with laser pulses whose frequency is swept through the resonance. This observation in photoluminescence experiments is made possible by introducing a novel optical detection scheme for the resonant electron hole pair (exciton) generation.
We demonstrate electrically controlled robust state preparation of an exciton qubit by rapid adiabatic passage with Fourier-limited laser pulses. In our approach, resonant ps laser pulses are applied to generate excitonic population in a quantum dot, whereas synchronously applied ps electric transients provide a controlled sweep of the exciton transition energy. The ps electric transients applied to the quantum dot in a diode structure result in ultrafast Stark shifts of the exciton energy on time scales below the decoherence time of the exciton. We experimentally demonstrate that the tailored electric chirp of the exciton energy leads to a controlled rapid adiabatic passage, which results in a robust state preparation of the exciton. Our experimental results are confirmed by a theoretical analysis of the chirped coherent manipulation of the exciton two level system. Our approach toward optoelectronic quantum control paves the way for broader applications that require a scalable control of functional coherent systems.
It is demonstrated how the exciton and the biexciton state of a quantum dot can be prepared with high fidelity on a picosecond time scale by driving the dot with a strong laser pulse that is tuned above the exciton resonance for exciton preparation and in resonance with the exciton transition for biexciton preparation. The proposed protocols make use of the phonon-induced relaxation towards photon dressed states in optically driven quantum dots and combine the simplicity of traditional Rabi oscillation schemes with the robustness of adiabatic rapid passage schemes. Our protocols allow for an on-demand, fast, and almost perfect state preparation even at strong carrier-phonon interaction where other schemes fail. In fact, the performance of the presented protocols is shown to be better the stronger the carrier-phonon interaction is.
A quantum emitter (QE) is a physical system that can be used to encode a quantum state via some internal degree of freedom (e.g. exciton, electron spin, valley) and is coupled to light via a dipolar transition that enables the conversion of that quantum state into the state of a photon and vice versa. Such QEs can be applied to sources of single and entangled photons for applications in quantum cryptography or quantum imaging and a collection of coupled QEs can be used to realize a small quantum simulator or quantum memory node in a distributed quantum network. Among solid state QE systems, semiconductor quantum dots (QD) are particularly attractive due to their high radiative quantum efficiencies, their strong optical coupling, enabling fast and arbitrary qubit rotations, and their tunable emission in the range of standard telecommunication wavelengths. Adiabatic rapid passage (ARP) is a state preparation scheme that enables the excitation and de-excitation of a QE with a high fidelity even in the presence of fluctuations in experimental parameters such as intensity and frequency of the control laser pulse. This excitation scheme may be used for quantum state initialization in quantum information platforms and for triggering quantum light sources. This thesis work concerns an exploration of the efficacy of ARP for the quantum control of excitons in semiconductor QDs. The experiments carried out in this work show that the impact of phonons may be suppressed for ARP, pointing to the possibility of high-fidelity inversion at elevated temperatures. We also investigate the dependence of the threshold for decoherence suppression on the size and shape of the QD. The experiments performed in this thesis work also quantify the detuning tolerance of ARP. ARP was also used to demonstrate parallel quantum state initialization in two different QDs with different transition energies and dipole moments.
A biexciton in a semiconductor quantum dot is a source of polarization-entangled photons with high potential for implementation in scalable systems. Several approaches for nonresonant, resonant, and quasiresonant biexciton preparation exist, but all have their own disadvantages; for instance, low fidelity, timing jitter, incoherence, or sensitivity to experimental parameters. We demonstrate a coherent and robust technique to generate a biexciton in an InGaAs quantum dot with a fidelity close to 1. The main concept is the application of rapid adiabatic passage to the ground-state--exciton--biexciton system. We reinforce our experimental results with simulations which include a microscopic coupling to phonons.
Theoretical investigations for the realization of population inversion of semiconductor quantum dot ground-state transitions by means of adiabatic passage with chirped optical pulses are presented. While the inversion due to Rabi oscillations depends sensitively on the resonance condition, the pulse area, as well as on the absence of carrier scattering and dephasing, we find that adiabatic passage is surprisingly insensitive to the excitation conditions and carrier scattering effects. Quantum kinetic models for the interaction of quantum-dot carriers with longitudinal optical phonons are used to describe carrier scattering and dephasing in the corresponding simulations and allow to quantify the conditions to simultaneously invert an ensamble of quantum dots.