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Applied Physics Letters

Electrically controlled rapid adiabatic passage in a single quantum dot

Amlan Mukherjee, Alex Widhalm, Dustin Siebert, Sebastian Krehs, Nandlal Sharma, A. Thiede, D. Reuter, Jens Förstner, A. Zrenner

Published Jun 22, 2020• 10 citations
Publisher

Abstract

We demonstrate electrically controlled robust state preparation of an exciton qubit by rapid adiabatic passage with Fourier-limited laser pulses. In our approach, resonant ps laser pulses are applied to generate excitonic population in a quantum dot, whereas synchronously applied ps electric transients provide a controlled sweep of the exciton transition energy. The ps electric transients applied to the quantum dot in a diode structure result in ultrafast Stark shifts of the exciton energy on time scales below the decoherence time of the exciton. We experimentally demonstrate that the tailored electric chirp of the exciton energy leads to a controlled rapid adiabatic passage, which results in a robust state preparation of the exciton. Our experimental results are confirmed by a theoretical analysis of the chirped coherent manipulation of the exciton two level system. Our approach toward optoelectronic quantum control paves the way for broader applications that require a scalable control of functional coherent systems.

DOI
10.1063/5.0012257

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We demonstrate electrically controlled robust state preparation of an exciton qubit by rapid adiabatic passage with Fourier-limited laser pulses. In our approach, resonant ps laser pulses are applied to generate excitonic population in a quantum dot, whereas synchronously applied ps electric transients provide a controlled sweep of the exciton transition energy. The ps electric transients applied to the quantum dot in a diode structure result in ultrafast Stark shifts of the exciton energy on time scales below the decoherence time of the exciton. We experimentally demonstrate that the tailored electric chirp of the exciton energy leads to a controlled rapid adiabatic passage, which results in a robust state preparation of the exciton. Our experimental results are confirmed by a theoretical analysis of the chirped coherent manipulation of the exciton two level system. Our approach toward optoelectronic quantum control paves the way for broader applications that require a scalable control of functional coherent systems.
An exciton in a quantum dot (QD) strongly couples to light, allowing the ultrafast manipulation of the quantum states on the order of femtoseconds [1]. Since a QD exciton can be regarded as a two-level system, the excitonic state can be manipulated coherently via Rabi oscillations depending on the electric field of the excitation pulse and the resonant frequency of the QD exciton. However, uniformly manipulating the exciton ensemble in a large number of QDs using ultrashort pulses is quite difficult due to the inhomogeneous distributions of the excitonic resonant frequency and the laser intensity for each QD. Adiabatic rapid passage (ARP) has been demonstrated to overcome this problem because it provides a quantum manipulation technique robust over the inhomogeneities [2], [3] by using chirped pulses (CP) instead of using Fourier transform-limited pulses (TLP). While ARP has been studied extensively in two-level systems with inhomogeneous linewidths up to GHz, it has not been rarely applied to two-level systems with THz inhomogeneous linewidths such as QDs. In this work, we experimentally demonstrate the ultrafast coherent transfer of the exciton population via ARP in two kinds of QD samples; 150-layer stacked InAs QDs and 50-layer stacked InAs QDs embedded in a resonator (Fig. 1(a)).
We report on the coherent phase manipulation of quantum dot excitons by electric means. For our experiments, we use a low capacitance single quantum dot photodiode which is electrically controlled by a custom designed SiGe:C BiCMOS chip. The phase manipulation is performed and quantified in a Ramsey experiment, where ultrafast transient detuning of the exciton energy is performed synchronous to double pulse π/2 ps laser excitation. We are able to demonstrate electrically controlled phase manipulations with magnitudes up to 3π within 100 ps which is below the dephasing time of the quantum dot exciton.
The energy states in semiconductor quantum dots are discrete as in atoms, and quantum states can be coherently controlled with resonant laser pulses. Long coherence times allow the observation of Rabi-flopping of a single dipole transition in a solid state device, for which occupancy of the upper state depends sensitively on the dipole moment and the excitation laser power. We report on the robust preparation of a quantum state using an optical technique that exploits rapid adiabatic passage from the ground to an excited state through excitation with laser pulses whose frequency is swept through the resonance.
The energy states in semiconductor quantum dots are discrete as in atoms, and quantum states can be coherently controlled with resonant laser pulses. Long coherence times allow the observation of Rabi flopping of a single dipole transition in a solid state device, for which occupancy of the upper state depends sensitively on the dipole moment and the excitation laser power. We report on the robust population inversion in a single quantum dot using an optical technique that exploits rapid adiabatic passage from the ground to an excited state through excitation with laser pulses whose frequency is swept through the resonance. This observation in photoluminescence experiments is made possible by introducing a novel optical detection scheme for the resonant electron hole pair (exciton) generation.
Semiconductor quantum dots have been featured in a number of proposals for quantum computing because of the advantages afforded by confinement on the nanoscale, such as well separated, discrete energy levels and ease of optical manipulation. In addition, they can leverage established semiconductor fabrication techniques and, like the quantum dots used in this work, can be designed to match the telecommunication band, improving the scalability and potential integration of the platform into existing technologies. This thesis work applied optical pulse engineering to manipulate exciton qubits in self-assembled InAs quantum dots. Optimal quantum control theory was used to design pulse shapes that implement high fidelity single-qubit and two-qubit operations, with constraints on the numerical optimization that ensure that the pulses can be accurately implemented using a commercial 4f pulse shaper. In the case of single-qubit operations, the results showed that two uncoupled qubits can be manipulated in parallel using a single phase-shaped laser pulse, provided their optoelectronic properties are sufficiently different. It was demonstrated that targeted differences in inversion and phase between the qubits can be achieved on an ultrafast timescale with high fidelity. In the case of two-qubit operations, the controlled-rotation gate was optimized using amplitude-only and phase-only pulse shaping schemes. The shaped pulses for both schemes were shown to produce higher fidelity operations. The ability to implement robust state inversion on short timescales is particularly useful for technologies such as ultrafast optical switches, single-photon sources, and entangled-photon sources. This work has demonstrated state inversion in a single InAs quantum dot via adiabatic rapid passage using linearly chirped laser pulses. The achieved gate times were an order of magnitude shorter than previous demonstrations. Theoretical predictions of the dependence of the inversion efficiency of the exciton on the sign of the pulse chirp were also verified experimentally, allowing for the identification of phonon-mediated dephasing as the dominant source of decoherence.
We study the evolution of an exciton confined in a quantum dot adiabatically controlled by a frequency-swept (chirped) laser pulse in the presence of carrier-phonon coupling. We focus on the dynamics induced by a linearly polarized beam and analyze the decoherence due to phonon-assisted biexciton generation. We show that if the biexciton state is shifted down by a few meV, as is typically the case, the resulting decoherence is strong even at low temperatures. As a result, efficient state preparation is restricted to a small parameter area corresponding to low temperatures, positive chirps and moderate pulse areas.