Decoherence in Josephson Qubits from Dielectric Loss
John M. Martinis, Ken B. Cooper, R. McDermott, Matthias Steffen, M. Ansmann, Kevin D. Osborn, Katarina Cicak, Seongshik Oh, David P. Pappas, Raymond W. Simmonds, Clare C. Yu
Dielectric loss from two-level states is shown to be a dominant decoherence source in superconducting quantum bits. Depending on the qubit design, dielectric loss from insulating materials or the tunnel junction can lead to short coherence times. We show that a variety of microwave and qubit measurements are well modeled by loss from resonant absorption of two-level defects. Our results demonstrate that this loss can be significantly reduced by using better dielectrics and fabricating junctions of small area . With a redesigned phase qubit employing low-loss dielectrics, the energy relaxation rate has been improved by a factor of 20, opening up the possibility of multiqubit gates and algorithms.
Dielectric loss from two-level states is shown to be a dominant decoherence source in superconducting quantum bits. Depending on the qubit design, dielectric loss from insulating materials or the tunnel junction can lead to short coherence times. We show that a variety of microwave and qubit measurements are well modeled by loss from resonant absorption of two-level defects. Our results demonstrate that this loss can be significantly reduced by using better dielectrics and fabricating junctions of small area . With a redesigned phase qubit employing low-loss dielectrics, the energy relaxation rate has been improved by a factor of 20, opening up the possibility of multiqubit gates and algorithms.
We have measured the excited state lifetimes in Josephson junction phase and transmon qubits, all of which were fabricated with the same scalable multi-layer process. We have compared the lifetimes of phase qubits before and after removal of the isolating dielectric, SiN x , and find a fourfold improvement of the relaxation time after the removal. Together with the results from the transmon qubit and measurements on coplanar waveguide resonators, these measurements indicate that the lifetimes are limited by losses from the dielectric constituents of the qubits. We have extracted the individual loss contributions from the dielectrics in the tunnel junction barrier, AlO x , the isolating dielectric, SiN x , and the substrate, Si/SiO 2 , by weighting the total loss with the parts of the electric field over the different dielectric materials. Our results agree well with and complement the findings from other studies, demonstrating that superconducting qubits can be used as a reliable tool for high-frequency characterization of dielectric materials. We conclude with a discussion of how changes in design and material choice could improve qubit lifetimes by up to a factor of 4.
Dielectric loss from two-level systems (TLSs) formed by local defects have shown a significant impact on the qubit coherence time. These defects can originate in the insulation material for superconducting wires isolation or in the Josephson junction tunnel barrier material. Due to the complexity of the qubit circuit fabrication process, identifying the contribution from each decoherence source is challenging. In an effort to address this issue, we have developed superconducting qubit that consists of full epitaxially-grown NbN/AlN/NbN Josephson junctions in NbN coplanar waveguide (CPW) resonator circuit. The dielectric loss introduced from TLFs in tunnel junction barrier has been largely reduced due to the unique epitaxial feature of the tunnel junction. The quality factor Qi of the CPW resonator was measured and the dielectric loss tanδ is 3×10−4. The relaxation time inferred from the measured resonator quality factor was comparable to the qubit relaxation time.
The aim of this thesis was to realize superconducting quantum bits by using novel fabrication techniques and materials in order to enhance the coherence time of the former devices. For the system to be studied we chose the ux-biased phase qubit, which consists of a Josephson junction integrated in a superconducting loop. This qubit realization has some advantages, which make it an ideal test-bed for different fabrication technologies and materials. Relatively large Josephson junctions can be used in the phase qubit realization, which are easy to be fabricated by using standard lithographic technology with the flexibility of employing various fabrication techniques and materials. The coherence of current-generation of superconducting qubits seems to be limited by intrinsic sources of noise and energy loss, related to materials' defects (two-level systems, TLSs) on the surfaces and interfaces of the superconducting lms, and in the bulk of the dielectric films used for the microelectronic realization of the circuits. For this reason, we aimed our research activities on the realization of low loss dielectrics (a-Si:H), on its integration with Josephson junction technologies, on the protection of the superconducting films' surfaces from unwanted contamination, and on the optimization of the circuit design and fabrication processes.
Quantum sensing and computation can be realized with superconducting microwave circuits. Qubits are engineered quantum systems of capacitors and inductors with non-linear Josephson junctions. They operate in the single-excitation quantum regime, photons of 27μeV at 6.5 GHz. Quantum coherence is fundamentally limited by materials defects, in particular atomic-scale parasitic two-level systems (TLS) in amorphous dielectrics at circuit interfaces.[1] The electric fields driving oscillating charges in quantum circuits resonantly couple to TLS, producing phase noise and dissipation. We use coplanar niobium-on-silicon superconducting resonators to probe decoherence in quantum circuits. By selectively modifying interface dielectrics, we show that most TLS losses come from the silicon surface oxide, and most non-TLS losses are distributed throughout the niobium surface oxide. Through post-fabrication interface modification we reduced TLS losses by 85% and non-TLS losses by 72%, obtaining record single-photon resonator quality factors above 5 million and approaching a regime where non-TLS losses are dominant. [1]Müller, C., Cole, J. H. & Lisenfeld, J. Towards understanding two-level-systems in amorphous solids: insights from quantum circuits. Rep. Prog. Phys. 82, 124501 (2019)
This thesis examines sources of dissipation and dephasing in a dc SQUID phase qubit. Coupling of the qubit to the bias lines and lossy dielectrics causes the qubit to lose quantum information through a process known generally as decoherence. Using knowledge of the possible sources of decoherence, a dc SQUID phase qubit is designed with parameters that should have made it resistant to dissipation and dephasing from those sources. Device PB9 was a dc SQUID with one small area 0.23 (μm)2 Josephson junction with a critical current of 130 nA, which was meant to be the qubit junction, and a larger area 5 (μm)2 junction with a critical current of 8.6 μA, which acted as part of an inductive isolation network. The qubit junction was shunted by a 1.5 pF low-loss interdigitated capacitor. The dc current bias line had an on-chip LC filter with a cutoff frequency of 180 MHz. The other control lines were also designed to minimize coupling of dissipative elements to the qubit. According to a theoretical model of the dissipation and dephasing, the qubit was expected to have an energy relaxation T1 ≤ 8.4 μs and dephasing time Tø ∼ 1 μs. Because of the relatively high Josephson inductance of the qubit junction, the device did not act perform like a conventional isolated single-junction phase qubit. Instead, the resonant modes that I observed were the normal modes of the entire SQUID. At 20 mK and a frequency of 4.047 GHz, the maximum energy relaxation time of the device was found to be 350 ± 70 ns, despite the optimized design. Through a study of T1 versus applied flux, T1 was found to depend on the strength of the coupling of the microwave drive line to the qubit. When the line was more coupled, T1 was shorter. This was evidence that the microwave line was overcoupled to the qubit, and was limiting the lifetime of the excited state T1. Through a study of the spectroscopic coherence time T2* , which measured the effects of low-frequency inhomogeneous broadening and higher frequency dephasing from noise, I discovered that device PB9 has several sweet spots. In particular, the presence of a sweet spot with respect to critical current fluctuations allowed me to identify critical current noise as a major source of broadening and dephasing in the qubit. From the spectroscopy I estimated the 1/f critical current noise power density at 1 Hz was SI01 (1Hz) ≈ 10 (nA) 2/Hz and the 1/f flux noise power spectral density at 1 Hz was SΦ (1Hz) ≈ (110 μΦ 0)2/Hz. Both of these values were quite high, possibly due to switching of the device between measurements.
Josephson junctions form the essential non-linearity for almost all superconducting qubits. The junction is formed when two superconducting electrodes come within ∼1 nm of each other. Although the capacitance of these electrodes is a small fraction of the total qubit capacitance, the nearby electric fields are more concentrated in dielectric surfaces and can contribute substantially to the total dissipation. We have developed a technique to experimentally investigate the effect of these electrodes on the quality of superconducting devices. We use λ/4 coplanar waveguide resonators to emulate lumped qubit capacitors. We add a variable number of these electrodes to the capacitive end of these resonators and measure how the additional loss scales with the number of electrodes. We then reduce this loss with fabrication techniques that limit the amount of lossy dielectrics. We then use these techniques for the fabrication of Xmon qubits on a silicon substrate to improve their energy relaxation times by a factor of 5.