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Symposium on Microelectronics Technology and Devices

Fabrication and I-V Characterization of an Al/AlO x /Al Josephson Junction for Superconducting Qubits

Gustavo Moreto, Diego Molina, Everton Arrighi, Francisco P. M. Rouxinol

Published Aug 1, 2026• 0 citations
Publisher
DOI
10.1109/sbmicro70495.2026.11684438

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Fabrication of sub-μm Nb/Al-AlOx_xx​/Nb Josephson Junctions with Electron Beam Lithography for Qubit Applications
Low-frequency two level systems and 1/f1/f1/f noise in Al/AlOx_{x}x​/Al Josephson junctions for superconducting qubits: achieving a noiseless junction
We have fabricated and characterized asymmetric gap-engineered junctions and transmon devices. To create Josephson junctions with asymmetric gaps, Ti was used to proximitize and lower the superconducting gap of the Al counter-electrode. DC IV measurements of these small, proximitized Josephson junctions show a reduced gap and larger excess current for voltage biases below the superconducting gap when compared to standard Al/AlOx\mathrm{_{x}}x​/Al junctions. The energy relaxation time constant for an Al/AlOx\mathrm{_{x}}x​/Al/Ti 3D transmon wasT1=1 μT_{1}= 1\ \muT1​=1 μs, over two orders of magnitude shorter than the measuredT1=134 μT_{1} = 134\ \muT1​=134 μs of a standard Al/AlOx\mathrm{_{x}}x​/Al 3D transmon. Intentionally adding disorder between the Al and Ti layers reduces the proximity effect and subgap current while increasing the relaxation time toT1=32 μT_{1} = 32\ \muT1​=32 μs.