Optical and Quantum Sensing and Precision Metrology II
System-level evaluation of 795nm Q-VCSELs in 87Rb qSensors
Amirhossein Ghods, Newton Rai, G A Garcia, Gabriela Martinez, Olawale Lawal, Sristy Agrawal
Abstract
We report system-level evaluation of manufacturable, quantum-optimized 795-nm vertical-cavity surface-emitting lasers (Q-VCSELs) for rubidium (Rb) atomic sensors, with emphasis on integration into an 87Rb coherent population trapping (CPT) clock prototype. Operation at 795 nm (Rb D1) is constrained by increased internal loss/absorption, polarization instability, and stringent requirements on spectral purity. At the component level, we employ epitaxial and layout engineering to improve mode discrimination, polarization robustness, and high-temperature efficiency, achieving stable single-transverse-mode emission and linear polarization from 20–80 °C with side-mode suppression ratio (SMSR) >30 dB and polarization extinction ratio (PER) >20 dB. The devices exhibit low threshold current (<400 µA at 80 °C) and slope efficiency >0.5 mW/mA, enabling >1 mW single-mode, single-polarization output power in chip-scale form factors. Quantum-relevant characterization shows linewidth on the order of ~30–35 MHz and relative intensity noise below −130 dB/Hz at frequencies greater than 1KHz. We then integrate the Q-VCSEL into an 87Rb CPT clock setup and demonstrate a clear CPT resonance, achieving ~2.5% contrast and ~3 kHz CPT linewidth (FWHM), corresponding to a measured figure of merit of ~8.2 ppm. We further map key operating tradeoffs relevant to clock optimization, including optical power broadening (contrast peaking near ~50–60 µW while CPT linewidth increases with optical power) and RF-drive dependence across representative modulation powers. These results connect device-level laser characteristics to clock-level observables and provide a manufacturable component pathway for scalable Rb-based timing modules.