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International Conference on Optical Communication and Optoelectronic Technology (OCOT)

Influence of UV on charge state distribution of NV centers in diamond

Zuanquan Chen, Sen Zhang, Benjian Liu, Kang Liu, Bing Dai, Jiaqi Zhu

Published Nov 13, 2025• 0 citations
Publisher
DOI
10.1117/12.3078120

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Diamond samples of various origins containing NV centers were studied using optically detected magnetic resonance (ODMR) and photoluminescence (PL) methods. It is shown that various impurities and deformation-induced defects can significantly influence the crystal environment and properties of NV centers. This influence is reflected in such characteristics as the distribution of NV centers throughout the crystal volume, their charge state (the ratio of neutral to negatively charged NV centers), mechanical stresses and strains in their crystalline environment, interaction with a nitrogen donor, which affects their coherent properties, and their orientation within the diamond lattice.
Abstract The ultraviolet-visible (UV-Vis) spectrum was not generally considered an available method for measuring the concentration of negatively charged nitrogen-vacancy (NV-, NV center). In this study, we propose the idea of evaluating the concentration of NV center by the slope of the UV-Vis spectrum. To establish this new method we synthesized diamonds with different NV center concentrations by the chemical vapor deposition (CVD) method. We then measured the zero-phonon line (ZPL) intensity of PL spectra at 637 nm and estimated the concentration of the NV centers as a baseline for comparison to our new UV-Vis method. The UV-Vis transmission spectra were then measured and transformed to relative absorption coefficient spectra. Slopes of the transformed UV-Vis spectra between 400 nm and 800 nm were calculated and compared with the ZPL intensities. The results show a strong positive correlation between the slopes of the absorption spectra and the ZPL intensities of PL spectra at 637 nm. Therefore, this paper demonstrates the feasibility of estimating the concentration of the NV centers from measuring the transmission UV-Vis spectrum.
Abstract We investigated the charge state stability and coherence properties of near-surface single nitrogen vacancy (NV) centers in 12 C-enriched diamond for potential use in nanoscale magnetic field sensing applications. The stability of charge states in negatively charged NV centers (NV − ) was evaluated using one of the pulsed optically detected magnetic resonance measurements, Rabi oscillation measurements. During the accumulation of Rabi oscillations, an unstable shallow NV − was converted to a neutral state. As a result, the contrast of Rabi oscillations degraded, depending on charge state stability. We stabilized the NV − state of very shallow NV centers (∼2.6 ± 1.1 nm from the surface) created by 1.2 keV nitrogen ion implantation by diamond surface modification, UV/ozone exposure, and oxygen annealing. This improvement indicates that we can suppress the upward surface band bending and surface potential fluctuations through Fermi level pinning originating from oxygen-terminated diamond surfaces.