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Effect of Ultraviolet Regulation on the Charge States of Color Centers in Diamond

Zuanquan Chen, Sen Zhang, Benjian Liu, Jiwen Zhao, Yicun Li, Xiaobin Hao, Yunpeng Yang, Chao Chen, Kang Liu, Bing Dai, Jiaqi Zhu, Jiecai Han

Published Jan 1, 2024• 0 citations
Publisher
DOI
10.2139/ssrn.5002576

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This work is focused on the investigation of the X‐ray's interaction with the color centers in diamond. X‐rays have the high penetrating power of radiation, which allows performing unhindered modifications deeply in the bulk of diamond crystals. Herein, it is shown that X‐rays irradiation of diamond can change the charge states of its defects, including silicon‐vacancy (SiV) and nitrogen‐vacancy (NV) color centers. By studying low‐temperature absorption spectra, it is shown that negatively charged SiV− and NV− centers partially transform into neutrally charged SiV0 and NV0 centers, accordingly. In addition, new absorption lines are registered, which may belong to other charge states of color centers. The results open a new way for the study of charge states for defects in various crystals (not limited to diamond), as well as allow the control over the charge state of color centers for diamond‐based quantum optics.

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- Color Centers in Diamond

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For quantum applications, diamond is one of the most remarkable materials. On one hand, its wide band gap of 5.5 eV makes it optically transparent from far infrared to deep ultraviolet. On the other hand, the face centered cubic lattice can host plenty of optical active impurities, the so-called color centers. The most prominent of these color centers is the nitrogen-vacancy (NV) center, giving many diamonds a yellowish color. As nitrogen is the most abundant impurity, it is somehow natural to classify diamond according to its nitrogen content. The four types of diamond that are commonly distinguished are listed in Table 7.1.

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The silicon-vacancy (SiV) color center in diamond has recently emerged as a promising qubit for quantum photonics. However, the electrical control and excitation of the SiV centers are challenging due to the low density of free carriers in doped diamond. Here, we realize electrical excitation of SiV centers in a single-crystal diamond membrane, which is promising for scalable photonic architectures. We further demonstrate electrical switching of the charge states of the SiV centers by applying a forward bias voltage to the fabricated diamond-membrane devices and identify the position of the SiV−/SiV0 charge transition level. Our findings provide a perspective toward electrical triggering of color centers in diamond and accelerate the development of scalable quantum nanophotonic technologies.

Applied Physics Letters•Mar 9, 2020•17 citations
This work is focused on the investigation of the X‐ray's interaction with the color centers in diamond. X‐rays have the high penetrating power of radiation, which allows performing unhindered modifications deeply in the bulk of diamond crystals. Herein, it is shown that X‐rays irradiation of diamond can change the charge states of its defects, including silicon‐vacancy (SiV) and nitrogen‐vacancy (NV) color centers. By studying low‐temperature absorption spectra, it is shown that negatively charged SiV− and NV− centers partially transform into neutrally charged SiV0 and NV0 centers, accordingly. In addition, new absorption lines are registered, which may belong to other charge states of color centers. The results open a new way for the study of charge states for defects in various crystals (not limited to diamond), as well as allow the control over the charge state of color centers for diamond‐based quantum optics.
For quantum applications, diamond is one of the most remarkable materials. On one hand, its wide band gap of 5.5 eV makes it optically transparent from far infrared to deep ultraviolet. On the other hand, the face centered cubic lattice can host plenty of optical active impurities, the so-called color centers. The most prominent of these color centers is the nitrogen-vacancy (NV) center, giving many diamonds a yellowish color. As nitrogen is the most abundant impurity, it is somehow natural to classify diamond according to its nitrogen content. The four types of diamond that are commonly distinguished are listed in Table 7.1.
The silicon-vacancy (SiV) color center in diamond has recently emerged as a promising qubit for quantum photonics. However, the electrical control and excitation of the SiV centers are challenging due to the low density of free carriers in doped diamond. Here, we realize electrical excitation of SiV centers in a single-crystal diamond membrane, which is promising for scalable photonic architectures. We further demonstrate electrical switching of the charge states of the SiV centers by applying a forward bias voltage to the fabricated diamond-membrane devices and identify the position of the SiV−/SiV0 charge transition level. Our findings provide a perspective toward electrical triggering of color centers in diamond and accelerate the development of scalable quantum nanophotonic technologies.