Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

The influence of diamond origin on the properties of NV centers

Yakovleva, Valentina, Kirill V. Likhachev, Marina V. Muzafarova, R. A. Babunts, P. G. Baranov

Published Jan 1, 2026• 0 citations
Publisher

Abstract

Diamond samples of various origins containing NV centers were studied using optically detected magnetic resonance (ODMR) and photoluminescence (PL) methods. It is shown that various impurities and deformation-induced defects can significantly influence the crystal environment and properties of NV centers. This influence is reflected in such characteristics as the distribution of NV centers throughout the crystal volume, their charge state (the ratio of neutral to negatively charged NV centers), mechanical stresses and strains in their crystalline environment, interaction with a nitrogen donor, which affects their coherent properties, and their orientation within the diamond lattice.

DOI
10.18721/jpm.191.104

Related papers

Nitrogen vacancies (NV) centers in diamond for magnetic sensors and quantum sensing

Mayeul Chipaux, Stéphane Xavier, Alexandre Tallaire +6 more

Nitrogen Vacancy (NV) centers are point defects in diamond that allow magnetic field sensing based on Optically Detected Magnetic Resonance (ODMR). They are processed in ultrapure single-domain CVD grown diamond crystals and can be operated at room temperature. This results in solid-state sensors with a wide variety of applications. Ensemble of NV centers can be used to perform wide-field magnetic imaging with sensitivity in the nT range. Single NV centers can also be processed, which allows sensing at the atomic scale. This possibility, combined with its unique coherence properties, make NV center an ideal candidate for quantum sensing.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Feb 8, 2015•3 citations

Spectroscopy of Single Crystal Diamond Plates Modified by Proton Beams to Create NV Centers

Есеев Марат Каналбекович, Dmitry N. Makarov, Aleksey Kostin +13 more

Currently, synthetic diamonds are finding new applications. Quantum devices can be created based on diamond plates with the desired concentration of defects in the structure of the crystal lattice. NV color centers can be used in quantum applications by irradiating plates with high-energy particles, followed by annealing at temperatures above 800°C to develop the spin-optical properties of the centers Diamond plates are subjected to electron irradiation and much less often to proton irradiation. As a result, synthetic diamond plates with NV centers ob-tained by proton irradiation are less studied, although proton irradiation makes it possible to obtain a layered structure of NV centers. In this work, single crystal diamond plates irradiated with protons were studied using polarization microscopy, IR spectroscopy and ODMR spectros-copy. It is shown that when creating NV centers, the distribution and concentration of C – defects in the sample, as well as mechanical stresses before and after irradiation (with subsequent an-nealing), can differ significantly from each other.

•Oct 18, 2023•1 citation

Quantum Defects in Diamond: Identifying Nitrogen Isotopes of Nitrogen-Vacancy Centers

Morgan Chamberlain, Srivatsa C Vardaraj, Zeeshawn Kazi +2 more

Nitrogen-vacancy (NV) centers are point defects in diamond formed by one substitutional nitrogen atom and an adjacent vacancy. Low spectral diffusion is a necessary property for NV centers to be qubit candidates. To characterize differences between naturally formed and ion implanted NV centers, diamond samples were studied that contained both types. The ion implantation process used 15N to be able to differentiate from the 14N naturally formed NV centers. This project focused on identifying the isotope of a single NV center, which is the first step toward understanding differences in their emissive properties. Code was developed to execute, and then automate, the three experiments necessary to identify the isotope of a single NV center: Continuous Wave Optically Detected Magnetic Resonance (CW ODMR), Rabi oscillations, and Pulsed ODMR. The code was implemented on a test sample, where it successfully identified the isotope of several NV centers. The next step in this project is to link the isotope of NV centers to their emissive properties, with a goal of producing reliable qubits for quantum information processing circuits.

Bulletin of the American Physical Society•Mar 2, 2020•0 citations

Optical Properties of Nitrogen-Vacancy Centers Created near a Diamond Surface

Kai‐Mei C. Fu, Charles Santori, Paul E. Barclay +1 more

We study the optical properties of NV centers created near the diamond surface by nitrogen implantation and annealing and present a method to convert neutral NV centers to the desired negatively charged state.

Conference on Lasers and Electro-Optics•Jan 1, 2010•0 citations

Generation of NV– Centers in Diamond Nanostructures: PL, ODMR, and Spin Coherence

V. P. Popov, Sergey N. Podlesny, V. A. Antonov +3 more

The nanolayers and nanomembranes with the 30–300 thickness and the 0.5 ppm NV– center content were produced by 50 keV $${\text{H}}_{2}^{ + }$$ ion implantation in Ib type (111) diamond plates and vacuum or high pressure annealing with subsequent lift-off process. The similar NV– content nanolayers were formed by N+ ion implantation in IIa type (111) diamond plates and similar annealings. 〈111〉 oriented nanopillars were produced on both types of nanolayers using focused ion beam (FIB) with Ga+ 30 keV maskless milling. The unusual optically detected magnetic resonances (ODMRs) were measured in a single nanopillars with a height of 500‒700 nm and of 250 nm in diameter covered by an amorphous a-C:Ga nanolayer in the 0‒20 G magnetic field. They demonstrated both a significant decrease in the gyromagnetic ratio and the quenching of photoluminescence (PL) signal from the NV– centers inclined to the nanopillar axis by the conductive a‑C:Ga nanolayer and stresses created by it. The multistep O2 RIE plasma etching restored the normal ODMR resonance frequencies and intensities for all four NV–center orientations in (111) diamond nanopillars.

Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques•Apr 1, 2026•0 citations

Photoluminescence characterization of NV centers in CVD diamond as a function of different nitrogen doping levels for quantum sensing applications

Sierra Gómez, Javier, Silva Neto, José Vieira da, Trava Airoldi, Vladimir Jesus +1 more

Nitrogen-vacancy (NV) centers in single-crystal CVD diamond are promising candidates for quantum sensing due to their remarkable optical and spin properties [1]. These defects exhibit stable photoluminescence (PL), long spin coherence times, and high sensitivity to external fields [2]. In this study, we present a room-temperature PL characterization of NV centers excited with a 532 nm laser. The setup was optimized for high signal-to-noise ratio and spectral resolution. Key parameters analyzed include emission intensity, zero-phonon line (ZPL) at ~637 nm, phonon sidebands, and the charge state distribution between NV⁰ and NV⁻. The NV⁻ state, crucial for spin-based sensing, is evaluated to understand its stability under different nitrogen doping conditions [3]. The relative intensities of NV⁰ and NV⁻ provide insights into nitrogen incorporation and vacancy formation. These results contribute to optimizing synthesis conditions for enhanced NV⁻ concentration, supporting the advancement of diamond-based quantum sensing technologies.

•Jan 1, 2025•0 citations
Diamond samples of various origins containing NV centers were studied using optically detected magnetic resonance (ODMR) and photoluminescence (PL) methods. It is shown that various impurities and deformation-induced defects can significantly influence the crystal environment and properties of NV centers. This influence is reflected in such characteristics as the distribution of NV centers throughout the crystal volume, their charge state (the ratio of neutral to negatively charged NV centers), mechanical stresses and strains in their crystalline environment, interaction with a nitrogen donor, which affects their coherent properties, and their orientation within the diamond lattice.
Nitrogen Vacancy (NV) centers are point defects in diamond that allow magnetic field sensing based on Optically Detected Magnetic Resonance (ODMR). They are processed in ultrapure single-domain CVD grown diamond crystals and can be operated at room temperature. This results in solid-state sensors with a wide variety of applications. Ensemble of NV centers can be used to perform wide-field magnetic imaging with sensitivity in the nT range. Single NV centers can also be processed, which allows sensing at the atomic scale. This possibility, combined with its unique coherence properties, make NV center an ideal candidate for quantum sensing.
Currently, synthetic diamonds are finding new applications. Quantum devices can be created based on diamond plates with the desired concentration of defects in the structure of the crystal lattice. NV color centers can be used in quantum applications by irradiating plates with high-energy particles, followed by annealing at temperatures above 800°C to develop the spin-optical properties of the centers Diamond plates are subjected to electron irradiation and much less often to proton irradiation. As a result, synthetic diamond plates with NV centers ob-tained by proton irradiation are less studied, although proton irradiation makes it possible to obtain a layered structure of NV centers. In this work, single crystal diamond plates irradiated with protons were studied using polarization microscopy, IR spectroscopy and ODMR spectros-copy. It is shown that when creating NV centers, the distribution and concentration of C – defects in the sample, as well as mechanical stresses before and after irradiation (with subsequent an-nealing), can differ significantly from each other.
Nitrogen-vacancy (NV) centers are point defects in diamond formed by one substitutional nitrogen atom and an adjacent vacancy. Low spectral diffusion is a necessary property for NV centers to be qubit candidates. To characterize differences between naturally formed and ion implanted NV centers, diamond samples were studied that contained both types. The ion implantation process used 15N to be able to differentiate from the 14N naturally formed NV centers. This project focused on identifying the isotope of a single NV center, which is the first step toward understanding differences in their emissive properties. Code was developed to execute, and then automate, the three experiments necessary to identify the isotope of a single NV center: Continuous Wave Optically Detected Magnetic Resonance (CW ODMR), Rabi oscillations, and Pulsed ODMR. The code was implemented on a test sample, where it successfully identified the isotope of several NV centers. The next step in this project is to link the isotope of NV centers to their emissive properties, with a goal of producing reliable qubits for quantum information processing circuits.
The nanolayers and nanomembranes with the 30–300 thickness and the 0.5 ppm NV– center content were produced by 50 keV H2+{\text{H}}_{2}^{ + }H2+​ ion implantation in Ib type (111) diamond plates and vacuum or high pressure annealing with subsequent lift-off process. The similar NV– content nanolayers were formed by N+ ion implantation in IIa type (111) diamond plates and similar annealings. 〈111〉 oriented nanopillars were produced on both types of nanolayers using focused ion beam (FIB) with Ga+ 30 keV maskless milling. The unusual optically detected magnetic resonances (ODMRs) were measured in a single nanopillars with a height of 500‒700 nm and of 250 nm in diameter covered by an amorphous a-C:Ga nanolayer in the 0‒20 G magnetic field. They demonstrated both a significant decrease in the gyromagnetic ratio and the quenching of photoluminescence (PL) signal from the NV– centers inclined to the nanopillar axis by the conductive a‑C:Ga nanolayer and stresses created by it. The multistep O2 RIE plasma etching restored the normal ODMR resonance frequencies and intensities for all four NV–center orientations in (111) diamond nanopillars.
Nitrogen-vacancy (NV) centers in single-crystal CVD diamond are promising candidates for quantum sensing due to their remarkable optical and spin properties [1]. These defects exhibit stable photoluminescence (PL), long spin coherence times, and high sensitivity to external fields [2]. In this study, we present a room-temperature PL characterization of NV centers excited with a 532 nm laser. The setup was optimized for high signal-to-noise ratio and spectral resolution. Key parameters analyzed include emission intensity, zero-phonon line (ZPL) at ~637 nm, phonon sidebands, and the charge state distribution between NV⁰ and NV⁻. The NV⁻ state, crucial for spin-based sensing, is evaluated to understand its stability under different nitrogen doping conditions [3]. The relative intensities of NV⁰ and NV⁻ provide insights into nitrogen incorporation and vacancy formation. These results contribute to optimizing synthesis conditions for enhanced NV⁻ concentration, supporting the advancement of diamond-based quantum sensing technologies.