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IEEE International Symposium on Circuits and Systems proceedings

S-PAM: Superconductor-Semiconductor Interface Circuit with Pulse-Amplitude Modulation

Yerzhan Mustafa, Selçuk Köse

Published May 25, 2025• 3 citations
Publisher

Abstract

Superconductor-semiconductor interface circuits are integral part of connecting cryogenic classical and quantum computing systems with the room temperature electronics. Due to the cooling power constraints of cryogenic setups, the number of data transmission channels between temperature stages is often limited by the heat load of cables and connectors. As a result, a high data rate (throughput) per channel is desired for large-scale computing systems. The state-of-the-art superconductor-semiconductor interface circuits use a binary data format. In this work, a novel interface circuit is proposed that produces signals with pulse-amplitude modulation (PAM). As a case study, a PAM-4 SQUID (superconducting quantum interference device) stack interface circuit is developed. With four output voltage levels, the effective data rate can be doubled while keeping the same operating frequency. Alternatively, the number of cryogenic cables can be reduced by two times as compared to the conventional binary data links.

DOI
10.1109/iscas56072.2025.11043921

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Superconductor-semiconductor interface circuits are integral part of connecting cryogenic classical and quantum computing systems with the room temperature electronics. Due to the cooling power constraints of cryogenic setups, the number of data transmission channels between temperature stages is often limited by the heat load of cables and connectors. As a result, a high data rate (throughput) per channel is desired for large-scale computing systems. The state-of-the-art superconductor-semiconductor interface circuits use a binary data format. In this work, a novel interface circuit is proposed that produces signals with pulse-amplitude modulation (PAM). As a case study, a PAM-4 SQUID (superconducting quantum interference device) stack interface circuit is developed. With four output voltage levels, the effective data rate can be doubled while keeping the same operating frequency. Alternatively, the number of cryogenic cables can be reduced by two times as compared to the conventional binary data links.
Interface circuits are the key components that enable the hybrid integration of superconductor and semiconductor digital electronics. The design requirements of superconductor-semiconductor interface circuits vary depending on the application, such as high-performance classical computing, superconducting quantum computing, and digital signal processing. In this survey, various interface circuits are categorized based on the working principle and structure. The superconducting output drivers are explored, which are capable of converting and amplifying, e.g., single flux quantum (SFQ) voltage pulses, to voltage levels that semiconductor circuits can process. Several trade-offs between circuit- and system-level design parameters are examined. Accordingly, parameters such as the data rate, output voltage, power dissipation, layout area, thermal/heat load of cryogenic cables, and bit-error rate are considered.
Cryogenic computing systems often require communication between single flux quantum (SFQ) circuits at 4 K and CMOS circuits at a higher temperature stage. Interface circuits such as a 4JL (four-junction logic) gate and a SQUID (superconducting quantum interference device) stack have previously been used for SFQ-CMOS data links, but they have only been used for systems contained at 4 K. When communicating with CMOS circuits at a higher temperature stage, these interface circuits must be implemented in accordance with a holistic analysis of the entire cryogenic computing system. We have conducted an analysis in which we compare the impact of a 4JL gate and a SQUID stack on a system designed for the HYPRES ICE-T. For our analysis, we use the CORE e4 RSFQ microprocessor as the SFQ circuitry at 4 K. We provide guidelines for deciding between a 4JL gate and a SQUID stack as superconductor-semiconductor interface circuits in hybrid computing systems with multiple temperature stages.
Abstract The many advantages of cryogenically cooled single-flux quantum (SFQ) circuits imply that the high speed and low voltage output signals must be amplified and interfaced with standard electronics. State-of-the-art low-noise and wide-band amplifiers are required to interface with room temperature electronics. One solution is to place preamplifiers at the cryogenic stage, which requires specific semiconductor design and fabrication. However, a more viable and energy-efficient approach is to integrate the pulsed logic circuit output stages with on-chip superconductor preamplifiers. We designed, fabricated, and tested an on-chip compact voltage multiplier integrated with the output stage of SFQ circuits to increase the voltage amplitude of SFQ pulses. The circuit is designed with the same technology as the logic circuit hence its noise level is lower, and it works at higher frequencies compared to complementary metal-oxide semi-conductor amplifiers and due to quantized nature of it there is no added noise. The fabricated circuit has a compact size of 160 µ m × 320 µ m and provides about 10 dB gain with measured 600 µ V output voltage at frequencies up to ∼25 GHz in simulations. By stacking more levels, over 20 dB gain at circuit level is achievable as shown in simulations. Moreover the gain of the superconductor voltage amplifier is quantized and programmable.
Data transmission from single flux quantum (SFQ) circuits to room temperature electronics requires the use of superconductor output drivers and semiconductor amplifiers. The state-of-the-art superconductor output drivers such as SFQ-to-DC converter, superconducting quantum interference device (SQUID) stack, Suzuki stack (Josephson latching driver), and nanocryotron (nTron) have a binary output that produces either a logical 0’ or 1’. Due to the limited cooling power at 4 K, a higher data rate of superconductor output driver is desired to reduce the number of cryogenic cables (i.e., heat load) from 4 K to a higher temperature stage. In this paper, a novel ternary digital output data link is proposed by transmitting the data in three logical states such as 0’, 1’, and 2’. The proposed ternary data link consists of an encoder and a ternary superconductor output driver, which is based on a re-designed Suzuki stack circuit. As compared to a conventional (binary) output data link, the ternary data link can either increase the data rate by 50% or reduce the number of cryogenic cables by33%.
Superconductor electronics for high-performance computing and high-speed analog-to-digital converters requires multi-channel digital data links. Most difficult is the amplification of the weak signals from the superconductor circuit to the volt level of semiconductor electronics. We developed a hybrid digital interface based on a Josephson latching driver, the so-called Suzuki stack, and a clocked CMOS comparator. The input can be directly triggered by a single flux quantum pulse and the output provides a 1 V CMOS-level signal. In contrast to existing systems, our interface is optimized for ultra-low-power consumption to enable its application for parallel multi-bit data interfaces. We provide evaluation of various types of Suzuki stacks and various CMOS comparators. We present experimental data on the delay of the overall hybrid interface and the total power consumption. The bit-error rate has been measured to be below 10-12. We will discuss the trade-off among circuit robustness, speed, and power consumption.
The connection of RSFQ circuits with commercial room temperature electronics and amplifying SFQ pulses with high data rates require cryogenic interface amplifiers. Such amplifiers should provide extremely high bandwidth, low noise and low power consumption at the same time. Various hybrid amplifiers based on commercial p-HEMT transistors in an embedded microwave design were designed and characterized. Towards the p-HEMT transistor characterization at cryogenic temperature the biasing settings according to an optimum between voltage gain and low power consumption were determined. Thus a total power consumption of 2 mW and a voltage gain of 12 dB per single stage were achieved. For a preamplifier and an amplifier concept a multiple number of these stages were implemented in a microstrip and a coplanar transmission line design with a special matched interconnect taper towards the RSFQ components. Measurements of the amplifiers, the combination of an amplifier with a RSFQ circuit at 4.2 K showed their good performances without any disturbance of the RSFQ circuit. Due to the losses between the stages a total gain of 25 dB with a four stage amplifier was achieved; pulse rates went up to 3 Gb/s. The total power consumption was in the range of 8 mW. Further increase of data rates will be achieved by improving the matching between RSFQ output stage and amplifier.