In this work, we present a numerical model specifically designed for 3D multilayer devices, with a focus on nanobridge junctions and coplanar waveguides. Unlike existing numerical models, ours does not approximate the physical layout or limit the number of constituent materials, providing a more accurate and flexible design tool. We calculate critical currents, current–phase relationships, and the energy gap where relevant. We validate our model by comparing it with published data. Through our analysis, we found that using multilayer films significantly enhances control over these quantities. For nanobridge junctions in particular, multilayer structures improve qubit anharmonicity compared to monolayer junctions, offering a substantial advantage for qubit performance. For coated multilayer microwave circuits, it allows for better studies of the proximity effect, including their effective kinetic inductance.
In this work, we present a numerical model specifically designed for 3D multilayer devices, with a focus on nanobridge junctions and coplanar waveguides. Unlike existing numerical models, ours does not approximate the physical layout or limit the number of constituent materials, providing a more accurate and flexible design tool. We calculate critical currents, current–phase relationships, and the energy gap where relevant. We validate our model by comparing it with published data. Through our analysis, we found that using multilayer films significantly enhances control over these quantities. For nanobridge junctions in particular, multilayer structures improve qubit anharmonicity compared to monolayer junctions, offering a substantial advantage for qubit performance. For coated multilayer microwave circuits, it allows for better studies of the proximity effect, including their effective kinetic inductance.
In this work, we present a numerical model specifically designed for 3D multilayer devices, with a focus on nanobridge junctions and coplanar waveguides. Unlike existing numerical models, ours does not approximate the physical layout or limit the number of constituent materials, providing a more accurate and flexible design tool. We calculate critical currents, current phase relationships, and the energy gap where relevant. We validate our model by comparing it with published data. Through our analysis, we found that using multilayer films significantly enhances control over these quantities. For nanobridge junctions in particular, multilayer structures improve qubit anharmonicity compared to monolayer junctions, offering a substantial advantage for qubit performance. For coated multilayer microwave circuits it allows for better studies of the proximity effect, including their effective kinetic inductance.
We report the realization of multilayer three-dimensional nanobridge Josephson junctions based on Nb/NbN and Nb/TiN superconducting stacks fabricated using electron-beam lithography and chlorine-based dry etching. In this architecture, a high-resistivity nitride layer defines the geometrical weak link, while the top Nb layer sets the overall critical temperature and film quality of the stack. This multilayer design enables engineering of the superconducting gap and proximity effects without relying on focused ion beam milling or oxide tunnel barriers. The devices are successfully integrated into dc SQUIDs, demonstrating reliable circuit-level operation. By combining material selectivity with three-dimensional geometry, this platform provides a scalable route toward oxide-free Josephson junctions suitable for superconducting electronics.
Abstract Thin-film superconducting transmission lines play important roles in many signal transmission and detection systems, including qubit coupling and read-out schemes, electron spin resonance systems, parametric amplifiers, and various ultra high sensitivity detectors. Here we present a rigorous method for computing the electromagnetic behaviour of superconducting microstrip transmission lines and coplanar waveguides. Our method is based on conformal mapping, and is suitable for both homogeneous superconductors and proximity-coupled multilayers. We also present an effective conductivity approximation of multilayers, thereby allowing the multilayers to be analysed using existing electromagnetic design software. We compute the numerical results for Al–Ti bilayers and discuss the validity of our full computation and homogeneous approximation.
The superconducting quantum computer is an implementation of the quantum computer and a current leader the field in terms of performance and potential for scalability to large systems. Its two main components are the superconducting microwave resonator and the quantum bit (qubit). In Chapter 1, the concept of quantum computing is introduced, and the superconducting microwave resonator is explained in depth, along with a glimpse at the qubit and a description of two level system loss, the most prominent form of loss in low-power superconducting quantum circuits. Scalability is essential to the development of fault-tolerant quantum computing, as error correction requires a large array of quantum bits. The multilayer quantum circuit architecture is rising to the forefront as a solution to many of the scalability issues facing the field today. Chapter 2 summarizes some of these scalability issues, such as the suppression of unwanted modes and materials losses, and presents an overview of multilayer architectures applied to superconducting quantum circuits. The chapter further delves into indium bump bonding, an essential technique in multilayer circuit fabrication.In Chapter 3, we experimentally demonstrate a thermocompression bonding technology between on-chip indium thin films and apply it to capped superconducting devices. These devices can be used as a building block towards a more scalable architecture: the multilayer quantum circuit. We characterize the dc and microwave performance of these bonded devices at room temperature as well as cryogenic temperatures. At 10 mK, we find a small but significant dc bond resistance of 49.2μΩ cm2. A tunnel-capped, bonded device shows minimal microwave reflections and clean transmission up to 6.8 GHz compared to a similar uncapped device, demonstrating good performance. As a proof of concept, we fabricate and measure a set of tunnel-capped superconducting resonators, demonstrating marginal deterioration in resonator performance due to the bonding procedure. This work demonstrates that thermocompression bonding between thin on-chip indium films is a useful addition to the multilayer quantum circuit toolbox, and that this technique, when applied to form the tunnel-capped superconducting device, shows a promising step towards more scalable architectures. Indium is becoming ubiquitous in superconducting microwave circuits as it continues to be widely adopted as a bonding medium. However, the loss mechanisms in superconducting indium films have not been examined until now. In Chapter 4, we characterize microwave loss in indium and aluminium/indium thin films on silicon substrates by measuring superconducting coplanar waveguide resonators and estimating the main loss parameters at powers down to the sub-photon regime and at temperatures between 10 and 450 mK. We compare films deposited by thermal evaporation, sputtering, and molecular beam epitaxy. We study the effects of heating in vacuum and ambient atmospheric pressure as well as the effects of pre-deposition wafer cleaning using hydrofluoric acid. The microwave measurements are supported by thin film metrology including secondary-ion mass spectrometry. For thermally evaporated and sputtered films, we find that two-level states (TLSs) are the dominating loss mechanism at low photon number and temperature. Thermally evaporated indium is determined to have a TLS loss tangent due to indium oxide of∼5×10−5. The molecular beam epitaxial films show evidence of formation of a substantial indium-silicon eutectic layer, which leads to a drastic degradation in resonator performance.
Flux quantum logic and memory circuits using superconducting Josephson tunnel junctions have high-speed switching times (approximately 1 ps), low power dissipation (< 1 (mu) W per circuit) and low levels of thermally induced electrical noise. Current designs of such circuits employ single trilayer junctions, which impose circuit size and logic threshold limitations. A new design component, the multilayered tunnel junction, consists of a vertically stacked array (a 1D superlattice) of Josephson tunnel junctions. The introduction of multilayered junctions into superconducting electronic circuitry offers a reduction in the current device size, fault tolerances, and new device applications. We present numerical simulations of simple circuits employing multilayered Josephson junctions as design components. Comparison with conventional single flux quantum circuitry is discussed. We also present preliminary measurements of multilayered Josephson junctions fabricated for use in flux quantum devices.
Abstract Superconducting quantum interference devices (SQUIDs) with 3D nano-bridge junctions can be miniaturized into nano-SQUIDs that are able to sense a few spins in a large magnetic field. Among all device parameters, the inductance is key to the performance of SQUIDs with 3D nano-bridge junctions. Here, we measured the critical-current magnetic flux modulation curves of 12 devices with three design types using a current strip-line directly coupled to the SQUID loop. A best flux modulation depth of 71% was achieved for our 3D Nb SQUID. From the modulation curves, we extracted the inductance values of the current stripe-line in each design and compared them with the corresponding simulation results of InductEX. In this way, London penetration depths of 110 and 420 nm were determined for our Nb (niobium) and NbN (niobium nitride) films, respectively. Furthermore, we showed that inductances of 11 and 119 pH for Nb and NbN 3D nano-bridge junctions, respectively, dominated the total inductance of our SQUID loops which are 23 pH for Nb and 255 pH for NbN. A screening parameter being equal to one suggests optimal critical currents of 89.6 and 8.1 μ A for Nb and NbN SQUIDs, respectively. Additionally, intrinsic flux noise of 110 ± 40 n Φ 0 /(Hz) 1/2 is calculated for the Nb SQUIDs with 3D nano-bridge junctions by Langevin simulation.