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arXiv:2603.20757

Gap Engineered Superconducting Multilayer Nanobridge Josephson Junctions

Giuseppe Colletta, Susan Johny, Hua Feng, Mohammed Alkhalidi, Jonathan A. Collins, Martin Weides

cond-mat.supr-conquant-phSubmitted Mar 21, 2026• Announced Mar 24, 2026• 0 citations
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Abstract

We report the realization of multilayer three-dimensional nanobridge Josephson junctions based on Nb/NbN and Nb/TiN superconducting stacks fabricated using electron-beam lithography and chlorine-based dry etching. In this architecture, a high-resistivity nitride layer defines the geometrical weak link, while the top Nb layer sets the overall critical temperature and film quality of the stack. This multilayer design enables engineering of the superconducting gap and proximity effects without relying on focused ion beam milling or oxide tunnel barriers. The devices are successfully integrated into dc SQUIDs, demonstrating reliable circuit-level operation. By combining material selectivity with three-dimensional geometry, this platform provides a scalable route toward oxide-free Josephson junctions suitable for superconducting electronics.

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We report the realization of multilayer three-dimensional nanobridge Josephson junctions based on Nb/NbN and Nb/TiN superconducting stacks fabricated using electron-beam lithography and chlorine-based dry etching. In this architecture, a high-resistivity nitride layer defines the geometrical weak link, while the top Nb layer sets the overall critical temperature and film quality of the stack. This multilayer design enables engineering of the superconducting gap and proximity effects without relying on focused ion beam milling or oxide tunnel barriers. The devices are successfully integrated into dc SQUIDs, demonstrating reliable circuit-level operation. By combining material selectivity with three-dimensional geometry, this platform provides a scalable route toward oxide-free Josephson junctions suitable for superconducting electronics.
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Abstract We report the fabrication and properties of titanium nitride (TiN) nanobridge Josephson junctions (nJJs) and nanoscale superconducting quantum interference devices (nanoSQUIDs) on SiN-buffered Si substrates. The superior corrosion resistance, large coherence length, suitable superconducting transition temperature and highly selective reactive ion etching (RIE) of TiN compared to e-beam resists and the SiN buffer layer allow for reproducible preparation and result in long-term stability of the TiN nJJs. High-resolution transmission electron microscopy reveals a columnar structure of the TiN film on an amorphous SiN buffer layer. High-resolution scanning electron microscopy reveals the variable thickness shape of the nJJs. A combination of wet etching in 20% potassium hydroxide and RIE is used for bulk nanomachining of nanoSQUID cantilevers. More than 20 oscillations of the V(B) dependence of the nanoSQUIDs with a period of ∼6 mT and hysteresis-free I(V) characteristics (CVCs) of the all-TiN nJJs are observed at 4.2 K. CVCs of the low-I c all-TiN nJJs follow theoretical predictions for dirty superconductors down to ∼10 mK, with the critical current saturated below ∼0.6 K. These results pave the way for superconducting electronics based on nJJs operating non-hysteretically at 4.2 K, as well as for all-TiN qubits operating at sub-100 mK temperatures.
We present a fabrication technology for nanoscale superconducting quantum interference devices (SQUIDs) with overdamped superconductor-normal metal-superconductor (SNS) trilayer Nb/HfTi/Nb Josephson junctions. A combination of electron-beam lithography with chemical-mechanical polishing and magnetron sputtering on thermally oxidized Si wafers is used to produce direct current SQUIDs with 100-nm-lateral dimensions for Nb lines and junctions. We extended the process from originally two to three independent Nb layers. This extension offers the possibility to realize superconducting vias to all Nb layers without the HfTi barrier, and hence to increase the density and complexity of circuit structures. We present results on the yield of this process and measurements of SQUID characteristics.