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Journal of Physics Conference Series

Fabrication of Niobium Nanobridge Josephson Junctions

Takashi Tachiki, Kenji Horiguchi, Takashi Uchida

Published May 12, 2014• 1 citation
Publisher

Abstract

To realize antenna-coupled Josephson detectors for microwave and millimeter-wave radiation, planar-type Nb nanobridge Josephson junctions were fabricated. Nb thin films whose thickness, the root mean square roughness and the critical temperature were 20.0 nm, 0.109 nm and 8.4 K, respectively were deposited using a DC magnetron sputtering at a substrate temperature of 700°C. Nanobridges were obtained from the film using 80-kV electron beam lithography and reactive ion-beam etching in CF 4 (90%) + O2 (10%) gases. The minimum bridge area was 65 nm wide and 60 nm long. For the nanobridge whose width and length were less than 110 nm, an I-V characteristic showed resistively-shunted-junction behaviour near the critical temperature. Moreover, Shapiro steps were observed in the nanobridge with microwave irradiation at a frequency of 6 – 30 GHz. The Nb nanobridges can be used as detectors in the antenna-coupled devices.

DOI
10.1088/1742-6596/507/4/042041

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To realize antenna-coupled Josephson detectors for microwave and millimeter-wave radiation, planar-type Nb nanobridge Josephson junctions were fabricated. Nb thin films whose thickness, the root mean square roughness and the critical temperature were 20.0 nm, 0.109 nm and 8.4 K, respectively were deposited using a DC magnetron sputtering at a substrate temperature of 700°C. Nanobridges were obtained from the film using 80-kV electron beam lithography and reactive ion-beam etching in CF 4 (90%) + O2 (10%) gases. The minimum bridge area was 65 nm wide and 60 nm long. For the nanobridge whose width and length were less than 110 nm, an I-V characteristic showed resistively-shunted-junction behaviour near the critical temperature. Moreover, Shapiro steps were observed in the nanobridge with microwave irradiation at a frequency of 6 – 30 GHz. The Nb nanobridges can be used as detectors in the antenna-coupled devices.
Nb-Pb-Nb planar Josephson junctions were fabricated by electron-beam exposure and Reactive-Ion-Etching (RIE) and their response characteristics under millimeter-and submillimeter-wave radiation were investigated. The size of the weak-link was 0.67-1.0 micrometers long, 5.0 micrometers wide and 1000Å thick. The fourth Shapiro step under 70 GHz millimeter-wave radiation could be observed. On the other hand, the planar junctions showed only a bolometric response under 891 GHz submillimeter-wave radiation. In this paper, the characteristics of RIE using a CBrF3 gas as the etchant and an electron beam resist, PMMA, as the mask material are also discussed.
This paper investigates the feasibility of using weak link nanobridges as Josephson junction elements for the purpose of creating Josephson circuits. We demonstrate the development of a single-step electron beam lithography procedure to fabricate niobium nanobridges with dimensions down to . The single-step process facilitates fabrication that is scalable to complex circuits that require many junctions. We measure the IV -characteristics (IVC) of the nanobridges between temperatures of and and find agreement with numerical simulations and the analytical resistively shunted junction (RSJ) model. Furthermore, we investigate the behaviour of the nanobridges under rf irradiation and observe the characteristic microwave-induced Shapiro steps. Our simulated IVC under rf irradiation using both the RSJ model and circuit simulator JSIM are in agreement with the experimental data. As a potential use of nanobridges in circuits requiring many junctions, we investigate the theoretical performance of a nanobridge-based Josephson comparator circuit using JSIM .
Planar S/N/S Josephson junctions were successfully fabricated by multi-layered thin films of Bi-based high-Tc oxide superconductors. Two Bi2Sr2Ca1Cu2O(x) films and Bi2Sr2Cu1O(y) film were successively layered as superconducting electrodes and normal conducting buffer layer, respectively. These films were epitaxially deposited on (100) MgO substrate by in situ process of RF magnetron sputtering. Microjunction areas were defined by photolithography and Ar ion milling. These S/N/S type junctions clearly exhibited the AC Josephson effect under the irradiation of radio frequency waves of 12 GHz. More than 20th Shapiro steps were observed and those step heights were oscillated according to the irradiation power. These characteristics were stable and reproducible for different configuration of function area.
DC SQUIDs with outer loop size ∼10 μmx 10 μm have been fabricated with nanobridge Josephson junctions in thin Niobium films (25, 100 and 200 nm) using either electron beam or focused ion beam techniques. Such SQUIDs are ideally suited to incorporate into the centre strip of a superconducting coplanar waveguide. The current-voltage characteristics and magnetic field modulation of the SQUIDs are compared for the two methods. The temperature dependence of the critical current is quite linear for the e-beam devices whilst the focused ion beam devices fit an exponential. Here we also investigate trimming methods to reduce the critical currents of the nanojunctions fabricated in the thicker films, in order to improve the SQUID parameters at lower temperatures.
Several reactive dry etching methods; ion etching, sputter etching and plasma etching, were studied in order to fabricate a niobium variable-thickness type thin film bridge (VTB). Niobium was etched by CF4 reactive sputter etching with submicron accuracy and no significant influence on the superconducting transition temperature except very near the surface (<200 Å). The niobium VTB behaved as an S-S'-S bridge, and a reduced self-heating effect was realized by a variable-thickness geometry. The DC Josephson effect was observed in the temperature range without thermal hysteresis. The quality factor of the I c R n product obtained was at least 0.42 mV.