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Superconductor Science and Technology

TiN nanobridge Josephson junctions and nanoSQUIDs on SiN-buffered Si

Michael I. Faley, Hleb Fiadziushkin, Benedikt Frohn, Peter Schüffelgen, Rafal E. Dunin‐Borkowski

Published Apr 6, 2022• 12 citations
Publisher

Abstract

Abstract We report the fabrication and properties of titanium nitride (TiN) nanobridge Josephson junctions (nJJs) and nanoscale superconducting quantum interference devices (nanoSQUIDs) on SiN-buffered Si substrates. The superior corrosion resistance, large coherence length, suitable superconducting transition temperature and highly selective reactive ion etching (RIE) of TiN compared to e-beam resists and the SiN buffer layer allow for reproducible preparation and result in long-term stability of the TiN nJJs. High-resolution transmission electron microscopy reveals a columnar structure of the TiN film on an amorphous SiN buffer layer. High-resolution scanning electron microscopy reveals the variable thickness shape of the nJJs. A combination of wet etching in 20% potassium hydroxide and RIE is used for bulk nanomachining of nanoSQUID cantilevers. More than 20 oscillations of the V(B) dependence of the nanoSQUIDs with a period of ∼6 mT and hysteresis-free I(V) characteristics (CVCs) of the all-TiN nJJs are observed at 4.2 K. CVCs of the low-I c all-TiN nJJs follow theoretical predictions for dirty superconductors down to ∼10 mK, with the critical current saturated below ∼0.6 K. These results pave the way for superconducting electronics based on nJJs operating non-hysteretically at 4.2 K, as well as for all-TiN qubits operating at sub-100 mK temperatures.

DOI
10.1088/1361-6668/ac64cd

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Abstract We report the fabrication and properties of titanium nitride (TiN) nanobridge Josephson junctions (nJJs) and nanoscale superconducting quantum interference devices (nanoSQUIDs) on SiN-buffered Si substrates. The superior corrosion resistance, large coherence length, suitable superconducting transition temperature and highly selective reactive ion etching (RIE) of TiN compared to e-beam resists and the SiN buffer layer allow for reproducible preparation and result in long-term stability of the TiN nJJs. High-resolution transmission electron microscopy reveals a columnar structure of the TiN film on an amorphous SiN buffer layer. High-resolution scanning electron microscopy reveals the variable thickness shape of the nJJs. A combination of wet etching in 20% potassium hydroxide and RIE is used for bulk nanomachining of nanoSQUID cantilevers. More than 20 oscillations of the V(B) dependence of the nanoSQUIDs with a period of ∼6 mT and hysteresis-free I(V) characteristics (CVCs) of the all-TiN nJJs are observed at 4.2 K. CVCs of the low-I c all-TiN nJJs follow theoretical predictions for dirty superconductors down to ∼10 mK, with the critical current saturated below ∼0.6 K. These results pave the way for superconducting electronics based on nJJs operating non-hysteretically at 4.2 K, as well as for all-TiN qubits operating at sub-100 mK temperatures.
This paper presents the fabrication and characterization of superconducting qubit components from titanium nitride (TiN) and aluminum nitride (AlN) layers to create Josephson junctions and superconducting resonators in an all-nitride architecture. Our methodology comprises a complete process flow for the fabrication of TiN/AlN/TiN junctions, characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), ellipsometry and DC electrical measurements. We evaluated the sputtering rates of AlN under varied conditions, the critical temperatures of TiN thin films for different sputtering environments, and the internal quality factors of TiN resonators in the few-GHz regime, fabricated from these films. Overall, this offered insights into the material properties critical to qubit performance. Measurements of the dependence of the critical current of the TiNIIIAlNIIITiN junctions yielded values ranging from 150μA\mu \mathbf{A}μAto 2μA\mu \mathbf{A}μA, for AlN barrier thicknesses up to ca. 5 nm, respectively. Our findings demonstrate advances in the fabrication of nitride-based superconducting qubit components, which may find applications in quantum computing technologies based on novel materials.
The requirements of quantum metrology and nanoscience are driving the need for single-particle detection capability across a wide variety of physics areas, including quantum information processing, single-photon detection, nanoelectromechanical systems, nanomagnetism and spintronics. The single particles to be detected include atoms, molecules, photons, spins and even phonons, in the future. Nanoscale superconducting quantum interference devices (nanoSQUIDs) represent a new manifestation of an old but exciting superconducting technology which addresses some of these requirements. In this paper we describe a straightforward approach to fabricating Nb microbridge weak links using combined optical lithography and focused ion beams which may be used to fabricate nanoSQUIDs. The devices show non-hysteretic current?voltage characteristics and demonstrate very low noise, even at operating temperatures above 4.2?K. To improve our understanding of the superconducting properties of the Josephson microbridge/nanobridge junctions which have proved very successful in realizing low noise nanoSQUIDs we have carried out a combination of investigations. These include cryogenic resistance versus temperature (R(T)) and current?voltage characteristic measurements, atomic force microscope scans, controlled gallium (Ga) ion milling and implantation, and ion beam track modelling of these Josephson devices and Nb thin films.
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In the field of superconducting electronics, a π phase shifter based on a ferromagnetic Josephson junction is expected to provide various advantages to classical and quantum superconducting devices. Here we report niobium nitride (NbN)-based ferromagnetic π junctions on a silicon (Si) substrate with a titanium nitride (TiN) buffer layer, which have applications to flux-bias-free flux quantum bits (qubits) and classical digital logic elements. We fabricated and characterized NbN/aluminum nitride (AlN)/NbN Josephson junctions, NbN/copper nickel (CuNi)/NbN ferromagnetic Josephson junctions, and superconducting quantum interference devices (SQUIDs) consisting of these junctions on the Si substrate. The fabricated NbN/AlN/NbN junctions showed a high junction quality suitable for qubit applications. Furthermore, the magnetic field dependence of the SQUID's critical current indicated that the NbN/CuNi/NbN junction worked as a π phase shifter on the Si substrate.
Abstract Superconducting qubits are a promising quantum computing platform, but significant challenges remain, such as achieving sufficiently long and stable coherence times and precise control of circuit parameters. Further improvements in material processing are essential to overcome these challenges. This paper introduces our research on superconducting quantum circuit technology based on nitride superconductors, where the core technologies are epitaxial growth of titanium nitride (TiN) on silicon (Si) substrates and epitaxial Josephson junctions using niobium nitride (NbN), aluminum nitride (AlN), and magnesium oxide (MgO). We have established a fabrication process of NbN/AlN/NbN epitaxial junctions on Si (100) substrates using a TiN film as a buffer layer and are working on applying this process to superconducting qubits. We describe recent results on the effect of junction annealing and discuss the advantages and potential of epitaxial Josephson junctions for realizing large-scale superconducting quantum circuits.
Abstract Superconducting flux memory devices fabricated with nanoscale junctions and high-inductance materials can maintain high-speed access performance while significantly reducing the area required for superconducting loops. In this work, we present a method for preparing nanoscale NbN-based superconductor/normal-metal/superconductor (SNS) Josephson junctions that combines electron beam lithography with chemical mechanical planarization process. Scanning electron microscope images reveal that the junction has a very round shape, while cross-sectional transmission electron microscopy shows that it has a truncated cone structure, characterized by a narrow top and a wide bottom. The minimum diameter of the junction is 51 nm, with the diameter at the interface between the wiring layer and the top electrode being just 27 nm. These nanoscale junctions exhibit excellent Josephson properties with a critical current density J c of 673 ± 64 kA cm −2 and a characteristic voltage V c of 1.63 ± 0.45 mV at 4.2 K. Furthermore, we designed the superconducting memory cell based on the simulated inductance values of the NbN loop and the nanoscale NbN-based SNS junctions. The cell has a total area of 12.6 μ m × 6.5 μ m and contains a radio-frequency superconducting quantum interference device with one junction in the storage loop and a direct-current superconducting quantum interference device with two junctions in the readout loop. Using the flux-locked and feedback measurement method, a clear flux hysteresis curve can be obtained to verify the read-write functions of the device.