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IEEE Transactions on Applied Superconductivity

Superconducting Nb Nanobridges for Reduced Footprint and Efficient Next-Generation Electronics

Jonathan A. Collins, Calum Rose, A. Casaburi

Published Nov 4, 2022• 8 citations
Publisher

Abstract

We optimized a process to reliably fabricate thin Nb nanobridge weak links having a physical size comparable with Nb coherence length ξ(4.2K) ∼16 nm, controlled degraded superconductivity with respect to the electrodes, and excellent edge roughness. We then investigated the feasibility to use these nanobridges as the Josephson element for reduced footprints and efficient next-generation single flux quantum (SFQ) logic electronics. First of all, we demonstrated that in such thin Nb nanobridges, there is no thermal hysteresis in the current–voltage characteristics (IVC) that instead is usually observed in other weak links and prevents their use in SFQ electronics. We fitted the experimental IVCs of nanobridges with the resistively shunted junction model implemented with piecewise linear current–phase relation (CPR) finding a very good agreement with data. This allowed us to infer the CPR parameters and evaluate the product of critical current and normal resistance,IcRn∼mV, at varying temperatures. Using these data, we simulated the generation of voltage pulses at varying CPRs and verified that they still have a quantized area equal to the magnetic flux quantum Φ0and the productIcRnallows for speed of operationIcRN/ Φ0$\gg $100 GHz. Moreover, their critical currentIc$\approx $100$\mu $A, comparable with that of tunnel Josephson junctions (JJs) used in SFQ electronics, is orders of magnitude larger than thermal current noiseITN= (2π / Φ0)kBT$\approx $0.2$\mu $A at temperatureT= 4.2 K, for stable and, at the same time, efficient operation with energy per switch of onlyEJ≈ICΦ0$\mathbin{\hbox{$\buildrel<\over {\smash{\scriptstyle \sim}\vphantom{_x}}$}} $1 aJ. To assess the potential use of these nanobridges in SFQ logic electronics with a large number of elements, we used an open-source simulation software (JSim) to simulate the behavior of a standard DC-to-SFQ converter circuit. From the simulation made by implementing the CPR inferred from experimental data, we observed that the circuit behaves exactly as intended. Our results strongly suggest that these nanobridges can be used to develop large-scale SFQ electronics with several advantages over tunnel JJs. The reduced footprint, just one-third or less than standard tunnel JJs, and simplified fabrication process, with only 2 steps involved against typically ∼20 for tunnel JJs, could allow for a better fabrication tolerance, higher control on operation parameters, higher circuit density, and easier integration with other technology platforms. These characteristics could be very appealing also to replace tunnel JJs in quantum technology devices like transmon qubits and superconducting parametric amplifiers.

DOI
10.1109/tasc.2022.3218895

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We optimized a process to reliably fabricate thin Nb nanobridge weak links having a physical size comparable with Nb coherence length ξ(4.2K) ∼16 nm, controlled degraded superconductivity with respect to the electrodes, and excellent edge roughness. We then investigated the feasibility to use these nanobridges as the Josephson element for reduced footprints and efficient next-generation single flux quantum (SFQ) logic electronics. First of all, we demonstrated that in such thin Nb nanobridges, there is no thermal hysteresis in the current–voltage characteristics (IVC) that instead is usually observed in other weak links and prevents their use in SFQ electronics. We fitted the experimental IVCs of nanobridges with the resistively shunted junction model implemented with piecewise linear current–phase relation (CPR) finding a very good agreement with data. This allowed us to infer the CPR parameters and evaluate the product of critical current and normal resistance,IcRn∼mV, at varying temperatures. Using these data, we simulated the generation of voltage pulses at varying CPRs and verified that they still have a quantized area equal to the magnetic flux quantum Φ0and the productIcRnallows for speed of operationIcRN/ Φ0≫\gg ≫100 GHz. Moreover, their critical currentIc≈\approx ≈100μ\mu μA, comparable with that of tunnel Josephson junctions (JJs) used in SFQ electronics, is orders of magnitude larger than thermal current noiseITN= (2π / Φ0)kBT≈\approx ≈0.2μ\mu μA at temperatureT= 4.2 K, for stable and, at the same time, efficient operation with energy per switch of onlyEJ≈ICΦ0\mathbin{\hbox{\buildrel<\over {\smash{\scriptstyle \sim}\vphantom{_x}}}} 1 aJ. To assess the potential use of these nanobridges in SFQ logic electronics with a large number of elements, we used an open-source simulation software (JSim) to simulate the behavior of a standard DC-to-SFQ converter circuit. From the simulation made by implementing the CPR inferred from experimental data, we observed that the circuit behaves exactly as intended. Our results strongly suggest that these nanobridges can be used to develop large-scale SFQ electronics with several advantages over tunnel JJs. The reduced footprint, just one-third or less than standard tunnel JJs, and simplified fabrication process, with only 2 steps involved against typically ∼20 for tunnel JJs, could allow for a better fabrication tolerance, higher control on operation parameters, higher circuit density, and easier integration with other technology platforms. These characteristics could be very appealing also to replace tunnel JJs in quantum technology devices like transmon qubits and superconducting parametric amplifiers.
This paper investigates the feasibility of using weak link nanobridges as Josephson junction elements for the purpose of creating Josephson circuits. We demonstrate the development of a single-step electron beam lithography procedure to fabricate niobium nanobridges with dimensions down to . The single-step process facilitates fabrication that is scalable to complex circuits that require many junctions. We measure the IV -characteristics (IVC) of the nanobridges between temperatures of and and find agreement with numerical simulations and the analytical resistively shunted junction (RSJ) model. Furthermore, we investigate the behaviour of the nanobridges under rf irradiation and observe the characteristic microwave-induced Shapiro steps. Our simulated IVC under rf irradiation using both the RSJ model and circuit simulator JSIM are in agreement with the experimental data. As a potential use of nanobridges in circuits requiring many junctions, we investigate the theoretical performance of a nanobridge-based Josephson comparator circuit using JSIM .
Josephson junctions are used in present day voltage standards. To extend their use to AC voltage standards a high bandwidth, low-noise detector is required. A candidate component for this detector is a superconducting comparator based on Rapid Single Flux Quantum (RSFQ) circuits. The work presented here is a study to determine if nanobridge weak links can be used as the active Josephson element in these circuits. In order to achieve this an understanding of the nanobridge properties and in particular their critical currents is fundamental. We present simulations of a simple comparator using the circuit simulation software JSIM in order to study the effect of varying nanobridge parameters such as width, length, and loop area. These geometrical variables have an affect on the critical currents and loop inductances which subsequently effect device performance. Particular emphasis is given to investigation of how these parameters affect a key figure of merit, the grey zone width.
For the fabrication of nanoscale SQUIDs, for example having loop diameters of order 1 µm or smaller, the conventional trilayer window-type Josephson junctions are too large. Instead, we consider the use of nanobridge junctions with dimensions of order 100 nm. The problem of hysteresis in the junctions' current–voltage characteristic (IVC) is avoided by depositing a gold overlayer, which serves as both a thermal and electrical shunt. Noise measurement of dc SQUIDs which incorporate such Nb nanobridges as the Josephson junctions are reported. Devices having different IVCs were fabricated and characterized. The best device has a flux noise of 5 × 10 −6 Φ 0 Hz −1/2 at 4.2 K, and there is no significant increase in the noise level in a static magnetic field up to 2 mT. Techniques for increasing the voltage modulation depth, and hence improving the flux noise performance, are discussed.
We report low-power single-flux-quantum (SFQ) circuits fabricated with a lowered critical current density process and low-voltage design. We selected 250 A/cm2^{2}2to obtain 2–10 μA Josephson junctions (JJs) easily using conventional facilities. Our numerical simulation shows that the expected operating frequency is 10 GHz and that we can reduce the bias voltage to 0.1–0.5 mV; power consumption can be reduced to around 1 nW per JJ. We newly developed a fabrication process featuring four planarized Nb layers and a Pd resistor layer. We obtained the correct operation of several basic SFQ circuit elements designed with the lowered critical currents to 1/2 of the conventional circuits at 4.2 K. We also evaluated the Josephson junction critical currents, specific capacitance, resistance, and inductance at 3 K and 300 mK. We observed an increase of 7% in the critical currents at 300 mK, while the other parameters were unchanged. We demonstrated a 0.5-mV Josephson transmission line where we lowered the critical currents to 1/10. We expect such low-power SFQ circuits to operate at 20 mK, providing classical, general-purpose digital processing near quantum bits.
Abstract We report on the electrical properties of NbN/TaN/NbN Josephson junctions grown on thermally oxidized silicon substrates, along with the design and fabrication of superconducting single-flux-quantum (SFQ) circuits based on these NbN superconductor/normal metal/superconductor (SNS) junctions. The critical current density ( J c ) of the junctions was found to be relatively sensitive to the barrier thickness, decreasing from 108.0 ± 8.1 kA cm −2 for a 15 nm barrier to 12.8 ± 1.9 kA cm −2 for a 30 nm barrier. For a J c of approximately 24.5 ± 2.1 kA cm −2 and a barrier thickness of 25 nm, the NbN SNS junctions are self-shunted and exhibit nonhysteretic current–voltage ( I – V ) characteristics. Especially for junctions with diameter ( φ ) ranging from 0.8 to 1.6 μ m, their critical current ( I c ) falls within the range of 110–450 μ A, making them suitable for SFQ circuits. By considering the impact of excess current and incorporating it as an additional term in the conventional resistively and capacitively shunted junction model, the I – V curves of NbN SNS junctions can be precisely described, successfully minimizing the deviation between simulations and test results. The DC-SFQ and SFQ-DC interface circuits can both operate normally, and the bias margins of cell circuits such as Josephson transmission line, confluence buffer, D flip-flop, and splitter are greater than 40%. Compared to Nb superconductor/insulator/superconductor junctions, their self-shunting characteristics and relatively thick 25 nm barriers can also enhance the integration of circuits and increase the yield to complex circuits.
We adopt superconductor/ferromagnet/insulator/superconductor (SFIS) Josephson junctions (JJs) as both switching JJs and intrinsic π phase shifters in superconductor digital circuits. The critical current density (Jc) and characteristic voltage (Vc) of the SFIS junctions are about 22 A/cm2 and 22 μV, respectively. The intrinsic π phase shift is confirmed by measuring the suppressed nominal critical current Icn and half-period-shifted modulation pattern of a π–π–π superconducting quantum interference device (SQUID) that contains three π-JJs in a superconducting loop. A single-flux-quantum (SFQ) circuit composed of a DC/SFQ, Josephson transmission line (JTL), and SFQ/DC converter based on SFIS JJs alone is demonstrated at 4.2 K. The energy dissipation of the SFQ/DC converter decreases by 80% because some JJs are self-biased by the π phase shifter. The intrinsic circulating currents induced by the π phase shifters lead to a narrow bias margin (±5%) and even error function, which can be solved by parameters optimization or circuit initialization in the future. The half-modulation period (Φ0/2) of a half-flux-quantum (HFQ) SQUID (a partial HFQ JTL) exhibits propagation of HFQ between π–π–π SQUIDs, indicating that more complex HFQ circuits can be developed with π-JJs alone in the future.