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IEEE Transactions on Applied Superconductivity

Design and Fabrication of Low-Power Single-Flux-Quantum Circuits Toward Quantum Bit Control

Masamitsu Tanaka, Yoshihiro Kitagawa, T. Satoh, Tsuyoshi Yamamoto

Published Mar 2, 2023• 13 citations
Publisher

Abstract

We report low-power single-flux-quantum (SFQ) circuits fabricated with a lowered critical current density process and low-voltage design. We selected 250 A/cm$^{2}$to obtain 2–10 μA Josephson junctions (JJs) easily using conventional facilities. Our numerical simulation shows that the expected operating frequency is 10 GHz and that we can reduce the bias voltage to 0.1–0.5 mV; power consumption can be reduced to around 1 nW per JJ. We newly developed a fabrication process featuring four planarized Nb layers and a Pd resistor layer. We obtained the correct operation of several basic SFQ circuit elements designed with the lowered critical currents to 1/2 of the conventional circuits at 4.2 K. We also evaluated the Josephson junction critical currents, specific capacitance, resistance, and inductance at 3 K and 300 mK. We observed an increase of 7% in the critical currents at 300 mK, while the other parameters were unchanged. We demonstrated a 0.5-mV Josephson transmission line where we lowered the critical currents to 1/10. We expect such low-power SFQ circuits to operate at 20 mK, providing classical, general-purpose digital processing near quantum bits.

DOI
10.1109/tasc.2023.3251304

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We report low-power single-flux-quantum (SFQ) circuits fabricated with a lowered critical current density process and low-voltage design. We selected 250 A/cm2^{2}2to obtain 2–10 μA Josephson junctions (JJs) easily using conventional facilities. Our numerical simulation shows that the expected operating frequency is 10 GHz and that we can reduce the bias voltage to 0.1–0.5 mV; power consumption can be reduced to around 1 nW per JJ. We newly developed a fabrication process featuring four planarized Nb layers and a Pd resistor layer. We obtained the correct operation of several basic SFQ circuit elements designed with the lowered critical currents to 1/2 of the conventional circuits at 4.2 K. We also evaluated the Josephson junction critical currents, specific capacitance, resistance, and inductance at 3 K and 300 mK. We observed an increase of 7% in the critical currents at 300 mK, while the other parameters were unchanged. We demonstrated a 0.5-mV Josephson transmission line where we lowered the critical currents to 1/10. We expect such low-power SFQ circuits to operate at 20 mK, providing classical, general-purpose digital processing near quantum bits.
We report the measurement results of the low-power single-flux-quantum (SFQ) circuits below 20 mK using a dilution refrigerator. We have been developing the SFQ circuits using a lowered critical current density process (250 A/cm2) and low-voltage design (0.1–0.5 mV) toward digital signal processing near superconductor quantum bits. So far, we have designed several basic SFQ cells, including wiring elements, flip-flops, and logic gates, using the four Nb planarized layer process and obtained the correct operation at 300 mK. In this study, we tested several SFQ circuits aiming to evaluate the operation at the mixing chamber stage of a dilution refrigerator. Our experimental results show that there was almost no change of device parameters, such as critical current values of Josephson junctions, or operating margins of the basic cells between 300 mK and 16 mK.
Superconductor single-flux-quantum (SFQ) integrated circuits can provide classical, general-purpose digital processing at cryogenic temperature near quantum bits. We report high-frequency operation of low-power SFQ circuits using a lowered critical current density fabrication process and low-voltage design. We are developing a standard-cell library with integrated devices featuring four planarized Nb layers and a Pd resistor layer. SFQ shift registers successfully operated at up to 11 GHz at 0.3 K. The measured operating frequency is sufficient for SFQ-based digital controlling of quantum bits using impulse-shaped voltage pulses.
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In this paper, we report the development of a low-power single-flux-quantum (SFQ) standard cell library and experimental results, including the cell design, high-speed test of shift-registers, delay measurement using ring oscillators, and demonstration of simple demultiplexers. We fabricated the SFQ circuits using a lowered critical current density (250 A/cm2^{2}2) process and low-voltage design (0.5 or 0.1 mV). We reduced the power consumption to 1/50 or 1/250 from the conventional SFQ circuits operating at 4.2 K. We designed several essential SFQ cells, including wiring elements, flip-flops, and logic gates with the fabrication process using four planarized Nb layers and obtained the correct operation at 0.3 K. We tested 8-bit shift-registers aiming to evaluate the operating frequency of the developed SFQ cells. The 0.1-mV shift-registers operated up to 8.5 GHz. The experimental results of ring oscillators showed good agreement with the analog circuit simulation results. We believe that our experimentally-verified standard cell library is ready to use for SFQ-based digital control of qubits, such as demultiplexing of control signals, and the timing information and power consumption will be valuable information as the baseline to discuss future scalable quantum computer systems.
We report successful operations of low-energy consumption rapid single-flux-quantum (RSFQ) circuits applying lowered driving voltages, called LV-RSFQ, using different fabrication processes. In the LV-RSFQ, we feed bias currents to Josephson junctions from lowered constant voltages (less than 1 mV) through small resistors without extra inductors. Both static and dynamic energy consumption are reduced because of suppression of amplitudes of SFQ pulses, in exchange for slower switching speed. We show that the switching speed in LV-RSFQ circuits is improved by increasing critical current density of Josephson junctions. We demonstrated high-speed operations of LV-RSFQ shift registers in a range of 5-40 GHz and 15-90 GHz using the 2.5-kA/cm2and 10-kA/cm2fabrication technologies, respectively. Comparison of the experimental results of the LV-RSFQ circuits fabricated using two different technologies derives the optimum bias voltage in terms of energy-delay product ranged from 0.1 to 1.0ICRS, whereICRSis the product of Josephson critical current and shunt resistance.
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Rapid Single-Flux-Quantum Circuits Fabricated Using 20-kA/cm2\hbox{20}\hbox{-}\hbox{kA}/\hbox{cm}^{2}20-kA/cm2 Nb/AlOx/Nb\hbox{Nb}/\hbox{AlO}_{x}/\hbox{Nb}Nb/AlOx​/Nb Process
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