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IEEE International Conference on IC Design and Technology (ICICDT)

High-Frequency Operation of Low-Power Single-Flux-Quantum Circuits Fabricated Using 250 A/cm2 Nb/AlOx/Nb Planarization Process

Masamitsu Tanaka, Yoshihiro Kitagawa, T. Satoh, Tsuyoshi Yamamoto

Published Sep 25, 2023• 1 citation
Publisher

Abstract

Superconductor single-flux-quantum (SFQ) integrated circuits can provide classical, general-purpose digital processing at cryogenic temperature near quantum bits. We report high-frequency operation of low-power SFQ circuits using a lowered critical current density fabrication process and low-voltage design. We are developing a standard-cell library with integrated devices featuring four planarized Nb layers and a Pd resistor layer. SFQ shift registers successfully operated at up to 11 GHz at 0.3 K. The measured operating frequency is sufficient for SFQ-based digital controlling of quantum bits using impulse-shaped voltage pulses.

DOI
10.1109/icicdt59917.2023.10332292

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Superconductor single-flux-quantum (SFQ) integrated circuits can provide classical, general-purpose digital processing at cryogenic temperature near quantum bits. We report high-frequency operation of low-power SFQ circuits using a lowered critical current density fabrication process and low-voltage design. We are developing a standard-cell library with integrated devices featuring four planarized Nb layers and a Pd resistor layer. SFQ shift registers successfully operated at up to 11 GHz at 0.3 K. The measured operating frequency is sufficient for SFQ-based digital controlling of quantum bits using impulse-shaped voltage pulses.
We report low-power single-flux-quantum (SFQ) circuits fabricated with a lowered critical current density process and low-voltage design. We selected 250 A/cm2^{2}2to obtain 2–10 μA Josephson junctions (JJs) easily using conventional facilities. Our numerical simulation shows that the expected operating frequency is 10 GHz and that we can reduce the bias voltage to 0.1–0.5 mV; power consumption can be reduced to around 1 nW per JJ. We newly developed a fabrication process featuring four planarized Nb layers and a Pd resistor layer. We obtained the correct operation of several basic SFQ circuit elements designed with the lowered critical currents to 1/2 of the conventional circuits at 4.2 K. We also evaluated the Josephson junction critical currents, specific capacitance, resistance, and inductance at 3 K and 300 mK. We observed an increase of 7% in the critical currents at 300 mK, while the other parameters were unchanged. We demonstrated a 0.5-mV Josephson transmission line where we lowered the critical currents to 1/10. We expect such low-power SFQ circuits to operate at 20 mK, providing classical, general-purpose digital processing near quantum bits.
Low-Power Single-Flux-Quantum Standard Cell Library Using 250 A/cm2^{2}2 Process for Qubit Control Applications
In this paper, we report the development of a low-power single-flux-quantum (SFQ) standard cell library and experimental results, including the cell design, high-speed test of shift-registers, delay measurement using ring oscillators, and demonstration of simple demultiplexers. We fabricated the SFQ circuits using a lowered critical current density (250 A/cm2^{2}2) process and low-voltage design (0.5 or 0.1 mV). We reduced the power consumption to 1/50 or 1/250 from the conventional SFQ circuits operating at 4.2 K. We designed several essential SFQ cells, including wiring elements, flip-flops, and logic gates with the fabrication process using four planarized Nb layers and obtained the correct operation at 0.3 K. We tested 8-bit shift-registers aiming to evaluate the operating frequency of the developed SFQ cells. The 0.1-mV shift-registers operated up to 8.5 GHz. The experimental results of ring oscillators showed good agreement with the analog circuit simulation results. We believe that our experimentally-verified standard cell library is ready to use for SFQ-based digital control of qubits, such as demultiplexing of control signals, and the timing information and power consumption will be valuable information as the baseline to discuss future scalable quantum computer systems.
We report the measurement results of the low-power single-flux-quantum (SFQ) circuits below 20 mK using a dilution refrigerator. We have been developing the SFQ circuits using a lowered critical current density process (250 A/cm2) and low-voltage design (0.1–0.5 mV) toward digital signal processing near superconductor quantum bits. So far, we have designed several basic SFQ cells, including wiring elements, flip-flops, and logic gates, using the four Nb planarized layer process and obtained the correct operation at 300 mK. In this study, we tested several SFQ circuits aiming to evaluate the operation at the mixing chamber stage of a dilution refrigerator. Our experimental results show that there was almost no change of device parameters, such as critical current values of Josephson junctions, or operating margins of the basic cells between 300 mK and 16 mK.
We developed a process for fabricating nitride superconductor-based superconducting qubits monolithically integrated with a single flux quantum (SFQ)-based readout and control circuits. Since we used a Josephson junction (JJ) made of an NbN/AlN/NbN tri-layer, including a critical current density (Jc) of 50 A/cm2as the suitable material for superconducting qubits and SFQ readout/control circuits operating at 20 mK, the JJs for both the qubits and the SFQ circuits could simultaneously be fabricated. The device structure was also composed of three superconductive layers, comprising two superconductive layers as wiring layers and other layers as the top ground plane. Then, we used a Pd film as the resistive layer, which is required as the shunt resistors and the bias resistors for the SFQ control circuits, followed by an investigation of the properties of NbN/AlN/NbN epitaxial junctions and evaluation of the sheet inductance of the base NbN and wiring NbTiN layer. Our results showed the successful fabrication of a JJ with a sufficiently low leakage current and aJcof around 50 A/cm2, which was close to the target value. Furthermore, the evaluated sheet inductance exceeded 1 pH, which was several times larger than the values obtained for Nb-integrated circuits.
A single flux quantum (SFQ) logic cell library has been developed for the 10kA/cm2 Nb multi-layer fabrication process to efficiently design large-scale SFQ digital circuits. In the new cell library, the critical current density of Josephson junctions is increased from 2.5kA/cm2 to 10kA/cm2 compared to our conventional cell library, and the McCumber-Stwart parameter of each Josephson junction is increased to 2 in order to increase the circuit operation speed. More than 300 cells have been designed, including fundamental logic cells and wiring cells for passive interconnects. We have measured all cells and confirmed they stably operate with wide operating margins. On-chip high-speed test of the toggle flip-flop (TFF) cell has been performed by measuring the input and output voltages. The TFF cell at the input frequency of up to 400GHz was confirmed to operate correctly. Also, several fundamental digital circuits, a 4-bit concurrent-flow shift register and a bit-serial adder have been designed using the new cell library, and the correct operations of the circuits have been demonstrated at high clock frequencies of more than 100GHz.
Designs and test results for a single-flux-quantum (SFQ) eight-bit shift register circuit operating at frequencies above 100 GHz are described. The high-speed performance was realized by introducing a planarized 10 kA cm −2 Nb fabrication process as an advanced process and by adopting middle-damped junctions with McCumber parameters β c of 1.8–2.9 in the circuit. The middle-damped junctions were used to reduce the repulsion between SFQ pulses and to adjust the timing. The circuit was designed using a cell-based design method and was tested by constructing an on-chip test system with a ladder-type four-bit high-frequency clock generator. We confirmed its correct operations up to 120 GHz.