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Scientific Reports

Terahertz electromagnetically induced optical limiter in asymmetric coupled quantum wells

Nooshin Parkan, Mohammad Mahmoudi

Published Aug 17, 2024• 3 citations
Publisher

Abstract

This paper explores the optical limiting (OL) characteristics of an input probe field within a closed-loop asymmetric coupled quantum well (ACQW) system. Our research reveals that the application of Terahertz (THz) coupling laser fields can induce the OL behavior within the THz domain in the ACQW. The study demonstrates that revers saturable absorption arises through cross-Kerr nonlinearity, contributing to the emergence of OL behavior. Additionally, it is shown that the self-defocusing is induced concurrently within the system, further enhancing nonlinear refractive OL effects. Furthermore, it is revealed that the properties of induced OL can be manipulated by adjusting the characteristics of the applied fields. The discovered outcomes hold potential utility in safeguarding sensors and detectors operating within the THz band.

DOI
10.1038/s41598-024-69886-3

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This paper explores the optical limiting (OL) characteristics of an input probe field within a closed-loop asymmetric coupled quantum well (ACQW) system. Our research reveals that the application of Terahertz (THz) coupling laser fields can induce the OL behavior within the THz domain in the ACQW. The study demonstrates that revers saturable absorption arises through cross-Kerr nonlinearity, contributing to the emergence of OL behavior. Additionally, it is shown that the self-defocusing is induced concurrently within the system, further enhancing nonlinear refractive OL effects. Furthermore, it is revealed that the properties of induced OL can be manipulated by adjusting the characteristics of the applied fields. The discovered outcomes hold potential utility in safeguarding sensors and detectors operating within the THz band.
We study the generation and control of the microwave (MW)-induced reverse saturable absorption (RSA) and optical limiting (OL) in a three-level pump-probe V-type quantum system. It is shown that the saturable absorption switches to the RSA by applying the MW field to the transition between two upper levels. Moreover, it is demonstrated that the RSA and the induced OL threshold are controlled by either the intensity or detuning of the MW field. In addition, the effect of the coupling field on the induced optical limiting is studied, and it is obtained that the cross-Kerr nonlinearity has a major role in establishing efficient optical power limiting. In addition, we demonstrate that an increase in the atomic density and length of the medium makes the optical limiter more powerful. Finally, the theoretical Z-scan technique is presented to confirm the obtained results of the microwave-induced OL. The proposed scheme can be used to prepare a controllable optical limiter with various thresholds, which can protect the optical devices with different sensitivities.
Abstract In this article, we present an alternative excitation scheme for the study of optical responses of the probe field in a five-level semiconductor coupled quantum wells (CQWs). It is shown that in the linear case, our study reveals the formation of double and triple electromagnetically induced transparency (EIT) windows for the suitable values of Rabi-frequency of the control fields, while the linear dispersion is also tuned from anomalous to normal and vice versa within small range of detuning. Interestingly, we find that by properly adjusting the appropriate values of control field detunings, the behaviour of optical absorption and transparency is found to be asymmetric in nature. In addition, we also found that due to quantum coherence, nonlinear dispersion, specifically Kerr nonlinearity is dramatically enhanced with nearly vanishing linear absorption under EIT. The Kerr nonlinearity in the present scheme is identified to be very large ( ∼10−13 m2 V−2\:\sim{10}^{-13}\:{m}^{2}\:{V}^{-2}∼10−13m2V−2) in the mid IR range ( λ p=4.74  μ m\:{\lambda\:}_{p}=4.74\:\:\mu\:mλp​=4.74μm), which can be very useful for the investigation of several nonlinear phenomena at low light intensity in CQWs. The results of the investigations may have potential applications in optical switching devices at low powers, quantum information processing and many more in solid-state laser based system.
The third-order nonlinear susceptibility X^(3) of asymmetrically coupled quantum well (ACQW) structure is calculated by employing a V-type three-level model. The efficiency of absorptive optical nonlinearity, which we define as the ratio of the third-order nonlinear susceptibility X^(3) to the linear absorptive coefficient αo, is analysed for different electronic coherence oscillation frequencies. We show that the efficiency is enhanced with the increase of the electronic coherence oscillation frequency between the two wells but is degenerated as that of a single quantum well when the electronic coherence oscillation frequency is zero. Compared with single quantum well, the ACQW designed has the property of nonlinear absorption and dispersion depending strongly on the external electric field along the growth direction. We predict that ACQW structures can provide both high efficiency limiters and controllable optical Kerr switch in future communication systems.
The third-order nonlinear susceptibility χ(3) of asymmetrically coupled quantum well (ACQW) structure is calculated by employing a V-type three-level model. The efficiency of absorptive optical nonlinearity, which we define as the ratio of the third-order nonlinear susceptibility χ(3) to the linear absorptive coefficient α0, is analysed for different electronic coherence oscillation frequencies. We show that the efficiency is enhanced with the increase of the electronic coherence oscillation frequency between the two wells but is degenerated as that of a single quantum well when the electronic coherence oscillation frequency is zero. Compared with single quantum well, the ACQW designed has the property of nonlinear absorption and dispersion depending strongly on the external electric field along the growth direction. We predict that ACQW structures can provide both high efficiency limiters and controllable optical Kerr switch in future communication systems.
This paper presents a theoretical investigation of the phase-sensitive modulation instability of a continuous or quasicontinuous probe beam in an asymmetric coupled quantum well (ACQW) system facilitated by electromagnetically induced transparency. The dispersive properties of the probe beam can be controlled not only by the Rabi frequency of the control field but by the relative phase between them as well. The ACQW system exhibits large Kerr and quintic nonlinearities which could be controlled by controlling the relative phase of the probe beam. The probe beam is modulation unstable, and the gain and the bandwidth of unstable frequencies could be controlled by the phase of the probe beam. The gain of the instability disappears at certain values of phase and at certain other values of the phase the gain of the instability, and the bandwidth of unstable frequencies could be made large. Similarly, at certain values of the probe phase, the interplay of fourth-order dispersion and nonlinearity leads to the creation of discrete sidebands of the modulation instability. Both the fourth-order dispersion and quintic nonlinearity considerably reduces the growth and bandwidth of unstable frequencies.
The absorption and dispersion behaviors of an asymmetrically coupled quantum well (ACQW) structure are studied based on V-type system. We show that the quantum-confined Stark shift due to an electric field applied along the growth direction of ACQW leads to the detuning absorption, and the corresponding linear refraction is dramatically decreased in a smaller negative-bias voltage region. This means that refraction quenching induced by an external electric field can occur in an ACQW structure. However, the absorption and the dispersion behaviors become the same as those of the lowest excitonic state in a single quantum well structure as the negative-bias voltage further increases due to the disappearance of quantum-confined Stark effect. This means that the ACQW structure has controllable dispersion by using an external field.