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Chinese Physics

Enhancement of absorptive optical nonlinearity of asymmetrically coupled quantum well structures

HU Zhen-hua, Dexiu Huang

Published Mar 17, 2005• 3 citations
Publisher

Abstract

The third-order nonlinear susceptibility χ(3) of asymmetrically coupled quantum well (ACQW) structure is calculated by employing a V-type three-level model. The efficiency of absorptive optical nonlinearity, which we define as the ratio of the third-order nonlinear susceptibility χ(3) to the linear absorptive coefficient α0, is analysed for different electronic coherence oscillation frequencies. We show that the efficiency is enhanced with the increase of the electronic coherence oscillation frequency between the two wells but is degenerated as that of a single quantum well when the electronic coherence oscillation frequency is zero. Compared with single quantum well, the ACQW designed has the property of nonlinear absorption and dispersion depending strongly on the external electric field along the growth direction. We predict that ACQW structures can provide both high efficiency limiters and controllable optical Kerr switch in future communication systems.

DOI
10.1088/1009-1963/14/4/030

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Quantum Physics Letters•Oct 20, 2013•1 citation
The third-order nonlinear susceptibility χ(3) of asymmetrically coupled quantum well (ACQW) structure is calculated by employing a V-type three-level model. The efficiency of absorptive optical nonlinearity, which we define as the ratio of the third-order nonlinear susceptibility χ(3) to the linear absorptive coefficient α0, is analysed for different electronic coherence oscillation frequencies. We show that the efficiency is enhanced with the increase of the electronic coherence oscillation frequency between the two wells but is degenerated as that of a single quantum well when the electronic coherence oscillation frequency is zero. Compared with single quantum well, the ACQW designed has the property of nonlinear absorption and dispersion depending strongly on the external electric field along the growth direction. We predict that ACQW structures can provide both high efficiency limiters and controllable optical Kerr switch in future communication systems.
The third-order nonlinear susceptibility X^(3) of asymmetrically coupled quantum well (ACQW) structure is calculated by employing a V-type three-level model. The efficiency of absorptive optical nonlinearity, which we define as the ratio of the third-order nonlinear susceptibility X^(3) to the linear absorptive coefficient αo, is analysed for different electronic coherence oscillation frequencies. We show that the efficiency is enhanced with the increase of the electronic coherence oscillation frequency between the two wells but is degenerated as that of a single quantum well when the electronic coherence oscillation frequency is zero. Compared with single quantum well, the ACQW designed has the property of nonlinear absorption and dispersion depending strongly on the external electric field along the growth direction. We predict that ACQW structures can provide both high efficiency limiters and controllable optical Kerr switch in future communication systems.
In the past few years advance in nanofabrication techniques have made it possible to make well-like compound semiconductor structures of low nanometer size.In these structures,the state of the electron in the direction perpendicular to the length of the well is quantized with sufficiently large separation in energy levels and the motion of the electron parallel to the length is that of a quasi-free electron.One of the most remarkable properties of these one-dimensional electron system is that the optical transitions between the size-quantized subbands are feasible.The result shows there is a large optical nonlinearities in asymmetric quantum wells.The problem of optical saturation of intersubband absorption has recently attracted considerable attention.The problem is very important to the development of superlattice devices such as fast infrared detectors and(modulators) because one needs to know the range of input optical intensities for which linear operation is(possible.) The analytical expression of the linear and the third-order nonlinear optical intersubband absorption coefficients are obtained in Pschl-Teller wells using the density matrix formalism taking into account the(intrasubband) relaxation.Since there are two adjustable parameters κ and λ in Pschl-Teller wells,the shapes of the wells will change with the change of the parameters κ and λ,accordingly the linear and the third-order nonlinear optical absorption coefficients will change with the parameters κ and λ.It is shown that the optical absorption coefficient depends on the parameter,and the optical intensity strongly. The absorption saturation will occur with I increase.Numerical results are presented for a typical AlGaAs/GaAs Pschl-Teller well.
The absorption and dispersion behaviors of an asymmetrically coupled quantum well (ACQW) structure are studied based on V-type system. We show that the quantum-confined Stark shift due to an electric field applied along the growth direction of ACQW leads to the detuning absorption, and the corresponding linear refraction is dramatically decreased in a smaller negative-bias voltage region. This means that refraction quenching induced by an external electric field can occur in an ACQW structure. However, the absorption and the dispersion behaviors become the same as those of the lowest excitonic state in a single quantum well structure as the negative-bias voltage further increases due to the disappearance of quantum-confined Stark effect. This means that the ACQW structure has controllable dispersion by using an external field.
The analytic forms of the linear and the third-order nonlinear optical intersubband absorption coefficients were obtained for general asymmetric quantum well systems using the density matrix formalism.Based on the model,the linear and the third-order nonlinear intersubband optical absorptions in electric-field biased hyperbolic quantum wells were studied.The numerical results were presented for a typical AlxGa1-xAs/GaAs electric-field biased hyperbolic quantum wells.The results show that the contributors to the nonlinear absorption coefficient are due to the electric field,the shape of quantum well and the optical intensity.
Based on the density matrix approach and iterative method, we calculated the analytic forms of linear and third-order nonlinear optical absorption coefficients and refractive index changes for symmetric coupled quantum wells (SCQWs) considering a two-level system, and gave the corresponding numerical results. The calculated results show that the optical properties of SCQWs are significantly better than those of asymmetrically coupled quantum wells, and the optical absorption coefficient and refractive index change are affected by the structure parameters of the SCQWs and the incident optical intensity. Their physical mechanisms are elucidated.
Abstract: A theoretical investigation is carried out into the impact of incoherent pumping fields and quantum interference induced by incoherent pumping fields on the Kerr nonlinearity in a three-level asymmetric semiconductor quantum well system. It is found that Kerr nonlinearity is so sensitive to the rate of incoherent pumping fields, but insensitive to the quantum interference induced by incoherent pumping fields. In addition, it is demonstrated that an enhanced Kerr nonlinearity with reduced absorption can be achieved just via the strength of Fano- type interference and without applying any coherent laser field. The obtained results are very different from the conventional schemes which coherent coupling fields are used to control the Kerr nonlinearity. This advantages make our electronic medium much more practical than its atomic counterpart due to its flexible design and the controllable interference strength.