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Quantum Physics Letters

Controllable Kerr Nonlinearity via Incoherent Pump Fields in Semiconductor Quantum Wells

Hamid Reza Hamedi, Mostafa Sahrai, H. Tajalli

Published Oct 20, 2013• 1 citation
Publisher

Abstract

Abstract: A theoretical investigation is carried out into the impact of incoherent pumping fields and quantum interference induced by incoherent pumping fields on the Kerr nonlinearity in a three-level asymmetric semiconductor quantum well system. It is found that Kerr nonlinearity is so sensitive to the rate of incoherent pumping fields, but insensitive to the quantum interference induced by incoherent pumping fields. In addition, it is demonstrated that an enhanced Kerr nonlinearity with reduced absorption can be achieved just via the strength of Fano- type interference and without applying any coherent laser field. The obtained results are very different from the conventional schemes which coherent coupling fields are used to control the Kerr nonlinearity. This advantages make our electronic medium much more practical than its atomic counterpart due to its flexible design and the controllable interference strength.

DOI
10.12785/qpl/020302

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Abstract: A theoretical investigation is carried out into the impact of incoherent pumping fields and quantum interference induced by incoherent pumping fields on the Kerr nonlinearity in a three-level asymmetric semiconductor quantum well system. It is found that Kerr nonlinearity is so sensitive to the rate of incoherent pumping fields, but insensitive to the quantum interference induced by incoherent pumping fields. In addition, it is demonstrated that an enhanced Kerr nonlinearity with reduced absorption can be achieved just via the strength of Fano- type interference and without applying any coherent laser field. The obtained results are very different from the conventional schemes which coherent coupling fields are used to control the Kerr nonlinearity. This advantages make our electronic medium much more practical than its atomic counterpart due to its flexible design and the controllable interference strength.
The effect of quantum interference from incoherent pump field on the Kerr nonlinearity of V- and Lambda-type three-level systems is investigated. It is found that enhanced Kerr nonlinearity can be obtained via quantum interference of incoherent pump field. It is also demonstrated that the enhanced Kerr nonlinearity is located in the reduced-absorption region. The enhancement of Kerr nonlinearity is attributed mainly to the presence of extra atomic coherence induced by quantum interference from incoherent pump field.
The transient and steady-state dispersion and absorption properties of a three-subband asymmetric semiconductor quantum well system are investigated. In the steady-state regime, it is shown that by increasing the strength of Fano-interference as well as enhancement of energy splitting of two excited states the slope of dispersion changes from negative to positive which is corresponding to a switch between superluminal to subluminal light propagation. At the same time, the probe absorption reduces at telecommunication wavelength λ = 1550 nm. The influence of incoherent pumping fields on time-dependent susceptibility is then discussed. It is found that due to more transfer of population to the upper levels, increasing the rate of incoherent pump field leads to the reduction of probe absorption. In addition, it is realized that incoherent pumping has a major role in converting fast to slow propagation of light at long wavelength. We also introduce an extra controllability for the light pulse to be slow downed at Telecom wavelength just through the quantum interference arising from incoherent pumping fields. The obtained results may be practical in telecommunication applications.
Under the non-resonant condition, we investigated the optical bistability (OB) in a three-level quantum well system inside a unidirectional ring cavity. We find that the incoherent pumping fields and the quantum interference induced by incoherent pumping fields can affect the optical bistability dramatically, which can be used to manipulate efficiently the threshold intensity and the hysteresis loop. These results are achieved by applying the two incoherent pumping fields, so they are very different from the conventional schemes that coherent driving fields are used to control the optical bistability. Thus, it may provide some new possibilities for technological applications in optoelectronics and solid-state quantum information science.
We investigate the strength of Fano interference effects on the probe absorption spectra in asymmetric semiconductor quantum wells driven coherently by a probe laser field. We find that the probe absorption can be dramatically reduced due to the strength of the Fano interference, and the effect of the energy splitting on the probe absorption is also discussed. Our study is much more practical than its atomic counterpart due to its flexible design and the controllable interference strength. Thus it may provide some possibilities for technological applications in optoelectronics and solid-state quantum information science.
Abstract In this article, we present an alternative excitation scheme for the study of optical responses of the probe field in a five-level semiconductor coupled quantum wells (CQWs). It is shown that in the linear case, our study reveals the formation of double and triple electromagnetically induced transparency (EIT) windows for the suitable values of Rabi-frequency of the control fields, while the linear dispersion is also tuned from anomalous to normal and vice versa within small range of detuning. Interestingly, we find that by properly adjusting the appropriate values of control field detunings, the behaviour of optical absorption and transparency is found to be asymmetric in nature. In addition, we also found that due to quantum coherence, nonlinear dispersion, specifically Kerr nonlinearity is dramatically enhanced with nearly vanishing linear absorption under EIT. The Kerr nonlinearity in the present scheme is identified to be very large ( ∼10−13 m2 V−2\:\sim{10}^{-13}\:{m}^{2}\:{V}^{-2}∼10−13m2V−2) in the mid IR range ( λ p=4.74  μ m\:{\lambda\:}_{p}=4.74\:\:\mu\:mλp​=4.74μm), which can be very useful for the investigation of several nonlinear phenomena at low light intensity in CQWs. The results of the investigations may have potential applications in optical switching devices at low powers, quantum information processing and many more in solid-state laser based system.
This paper presents a comprehensive investigation on Kerr nonlinearity in a three-level semiconductor quantum well (SQW) superlattice and validates the existence of large Kerr nonlinearity of the order of [Formula: see text] in the vicinity of an electromagnetically induced transparency (EIT) window. The Kerr nonlinearity is found to vary with the relative phase of the applied optical fields, and by selecting suitable relative phases, an enhanced Kerr nonlinearity can be obtained. The results may find significant applications in optoelectronic and photonic devices.