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Acta Physica Sinica

Theoretical study on the absorption and dispersion in asymmetrically coupled qua ntum well structure

Hu Zhen-Hua, Dexiu Huang, (1)华中科技大学光电子工程系,武汉 430074; (2)华中科技大学光电子工程系,武汉 430074;武汉理工大学物理系,武汉 430063

Published Jan 1, 2005• 0 citations
Publisher

Abstract

The absorption and dispersion behaviors of an asymmetrically coupled quantum well (ACQW) structure are studied based on V-type system. We show that the quantum-confined Stark shift due to an electric field applied along the growth direction of ACQW leads to the detuning absorption, and the corresponding linear refraction is dramatically decreased in a smaller negative-bias voltage region. This means that refraction quenching induced by an external electric field can occur in an ACQW structure. However, the absorption and the dispersion behaviors become the same as those of the lowest excitonic state in a single quantum well structure as the negative-bias voltage further increases due to the disappearance of quantum-confined Stark effect. This means that the ACQW structure has controllable dispersion by using an external field.

DOI
10.7498/aps.54.1788

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The absorption and dispersion behaviors of an asymmetrically coupled quantum well (ACQW) structure are studied based on V-type system. We show that the quantum-confined Stark shift due to an electric field applied along the growth direction of ACQW leads to the detuning absorption, and the corresponding linear refraction is dramatically decreased in a smaller negative-bias voltage region. This means that refraction quenching induced by an external electric field can occur in an ACQW structure. However, the absorption and the dispersion behaviors become the same as those of the lowest excitonic state in a single quantum well structure as the negative-bias voltage further increases due to the disappearance of quantum-confined Stark effect. This means that the ACQW structure has controllable dispersion by using an external field.
The third-order nonlinear susceptibility X^(3) of asymmetrically coupled quantum well (ACQW) structure is calculated by employing a V-type three-level model. The efficiency of absorptive optical nonlinearity, which we define as the ratio of the third-order nonlinear susceptibility X^(3) to the linear absorptive coefficient αo, is analysed for different electronic coherence oscillation frequencies. We show that the efficiency is enhanced with the increase of the electronic coherence oscillation frequency between the two wells but is degenerated as that of a single quantum well when the electronic coherence oscillation frequency is zero. Compared with single quantum well, the ACQW designed has the property of nonlinear absorption and dispersion depending strongly on the external electric field along the growth direction. We predict that ACQW structures can provide both high efficiency limiters and controllable optical Kerr switch in future communication systems.
The third-order nonlinear susceptibility χ(3) of asymmetrically coupled quantum well (ACQW) structure is calculated by employing a V-type three-level model. The efficiency of absorptive optical nonlinearity, which we define as the ratio of the third-order nonlinear susceptibility χ(3) to the linear absorptive coefficient α0, is analysed for different electronic coherence oscillation frequencies. We show that the efficiency is enhanced with the increase of the electronic coherence oscillation frequency between the two wells but is degenerated as that of a single quantum well when the electronic coherence oscillation frequency is zero. Compared with single quantum well, the ACQW designed has the property of nonlinear absorption and dispersion depending strongly on the external electric field along the growth direction. We predict that ACQW structures can provide both high efficiency limiters and controllable optical Kerr switch in future communication systems.
In this work, the effects of the structure parameters, such as the central barrier thickness and the aluminium concentrations x, on the linear and nonlinear intersubband optical absorption coefficients and refractive index changes of the asymmetric double-graded quantum wells (ADGQWs) under the presence of an external static electric field are studied theoretically. The nonlinear optical properties of the ADGQWs are obtained using the compact-density matrix approach and iterative method. The numerical results obtained from the present work show that the external static electric field and the structure parameters play an important role in the optical properties of ADGQWs. Depending on the asymmetric nature of the confinement potential, in an electric field of kV/cm, the overlap between electronic wave functions decreases with increasing field whereas it increases for larger field values. The tunability of intersubband transitions can be applied to optical modulators and various device applications based on the optical transitions of electrons.
We propose a modulation scheme of optical absorption in a coupled asymmetric quantum well (QW) structure via electrically controllable quantum interference. It is based on the parallel-perpendicular energy coupling effect. We show that by applying an external electric Held in the parallel direction (to the QW layers), we can obtain a maximum (peak-type) absorption at a specific wavelength where absorption cancellation would occur due to electrically induced transparency without such an external Held .
We propose a modulation scheme of optical absorption in a coupled asymmetric quantum well (QW) structure via electrically controllable quantum interference. It is based on the parallel-perpendicular energy coupling effect. We show that by applying an external electric Held in the parallel direction (to the QW layers), we can obtain a maximum (peak-type) absorption at a specific wavelength where absorption cancellation would occur due to electrically induced transparency without such an external Held .