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Journal of Jilin University(Science Edition)

Structure Design and Optical Property Control of Double Quantum Well Coupled via Electronic Tunneling

Wu Jin-Hui

Published Jan 1, 2011• 0 citations
OpenAlex

Abstract

The authors designed an asymmetric double quantum well structure with three subbands in the conduction band,and then calculated energy values of the three subbands with the effective-mass Schrodinger equation of confined electrons.In particular,the two adjacent excited subbands were correlated to wave function due to the electronic tunneling effect.A weak probe field coupling the ground subband to the two excited subbands was found to have a double-peak absorption spectrum with an in-between transparency window.Applying a DC electric field on this double quantum well structure,one may easily change the ratio of dipole moments on the two probe transitions,and then effectively manipulate relative amplitudes of the two absorption peaks and the dispersion curve in the transparency window.

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The authors designed an asymmetric double quantum well structure with three subbands in the conduction band,and then calculated energy values of the three subbands with the effective-mass Schrodinger equation of confined electrons.In particular,the two adjacent excited subbands were correlated to wave function due to the electronic tunneling effect.A weak probe field coupling the ground subband to the two excited subbands was found to have a double-peak absorption spectrum with an in-between transparency window.Applying a DC electric field on this double quantum well structure,one may easily change the ratio of dipole moments on the two probe transitions,and then effectively manipulate relative amplitudes of the two absorption peaks and the dispersion curve in the transparency window.
We have investigated the dispersive properties of tunnelling-induced transparency in asymmetric double quantum well structures where two excited states are coupled by resonant tunnelling through a thin barrier in a three-level system of electronic subbands,The intersubband transitions exhibit high disperision at zero absorption,which leads to the slow light velocity in this medium as compared with that in vacuum(c=3×10^8).The group velocity in a specific GaAs/AlGaAs sample is calculated to be ug=c/4.30,This structure can be used to compensate for the dispersion and energy loss in fibre optical communications.
We have investigated the dispersive properties of tunnelling-induced transparency in asymmetric double quantum well structures where two excited states are coupled by resonant tunnelling through a thin barrier in a three-level system of electronic subbands. The intersubband transitions exhibit high dispersion at zero absorption, which leads to the slow light velocity in this medium as compared with that in vacuum ( c =3×10 8 ). The group velocity in a specific GaAs/AlGaAs sample is calculated to be v g = c /4.30. This structure can be used to compensate for the dispersion and energy loss in fibre optical communications.
Density-matrix equations for electrons in laser-coupled quantum wells are derived in second quantization, including an off-diagonal radiative-decay coupling between a pair of electron transitions. Calculations of spontaneous photoluminescence and time-resolved optical absorption for the probe field are formulated. The zero absorption of the pump-laser field within an overlapping region between two absorption peaks is found in a resonant asymmetric double-quantum-well system and explained as the quantum interference between two nearly degenerate electron transitions. Quantum interference is clearly demonstrated through phase cancellation between the two statistically averaged transition dipole moments. The laser frequency for zero absorption can be tuned within a tunneling gap by applying a small dc bias field. The ${k}_{\ensuremath{\Vert}}$-dependent energy-level separation is found to be a crucial factor for destroying quantum interference. The optical gain of the probe field is seen as a hole in the weak absorption peak for the resonant asymmetric double quantum wells selectively coupled by a laser field and shown to be a result of the partial inversion of the electron occupation probabilities in momentum space after laser excitation. The probe-field gain increases with the strength of the pump laser. The effects of transition blocking, induced quantum coherence, and off-diagonal radiative-decay coupling are quantitatively analyzed for this gain.
Including an n-doped layer in asymmetric double quantum wells restricts confined carriers into V-shaped potential profiles, forming discrete conduction subbands and enabling intersubband transitions. Most studies on doped semiconductor heterostructures focus on how external fields and structural parameters dictate optical absorption. However, electromagnetically induced transparency remains largely unexplored. Here, we show that the effect of an n-doped layer GaAs/AlxGa1−xAs in an asymmetric double quantum well system is quite sensitive to the width and position of the doped layer. By self-consistently solving the Poisson and Schrödinger’s equations, we determine the electronic structure using the finite element method within the effective mass approximation. We found that the characteristics of the n-doped layer can modulate the resonance frequencies involved in the electromagnetically induced transparency phenomenon. Our results demonstrate that an n-doped layer can control the electromagnetically induced transparency effect, potentially enhancing its applications in optoelectronic devices.
We investigate the transient behaviour of a weak probe in asymmetric double quantum well structures, where two excited states are coupled by resonant tunnelling through a thin barrier in a three-level system of electronic subbands. There is no external coherent coupling field applied, and we find that probe gain can be achieved during the transient process, which is induced by the coherent coupling of the upper states via the resonant tunnelling. We show that the transient behaviour of the probe depends on the coupling strength and the dephasing rate and can be tuned by changing the width of the tunnelling barrier.