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Chinese Physics Letters

Gain Spectrum in an Asymmetric Double Quantum Well

Xu Wei-Hua, Wu Jin-Hui, Jin-Yue Gao

Published Feb 24, 2005• 4 citations
Publisher

Abstract

We propose a scheme for light amplification in an asymmetric double quantum well, where two excited states are coupled by resonant tunnelling through a thin barrier in a three-level system of electronic subbands. By applying a single driving laser, the steady state gain can be obtained. The calculated gain spectrum for an asymmetric GaAs/AlGaAs double quantum well structure was presented.

DOI
10.1088/0256-307x/22/3/022

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We propose a scheme for light amplification in an asymmetric double quantum well, where two excited states are coupled by resonant tunnelling through a thin barrier in a three-level system of electronic subbands. By applying a single driving laser, the steady state gain can be obtained. The calculated gain spectrum for an asymmetric GaAs/AlGaAs double quantum well structure was presented.
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We investigate the transient behaviour of a weak probe in asymmetric double quantum well structures, where two excited states are coupled by resonant tunnelling through a thin barrier in a three-level system of electronic subbands. There is no external coherent coupling field applied, and we find that probe gain can be achieved during the transient process, which is induced by the coherent coupling of the upper states via the resonant tunnelling. We show that the transient behaviour of the probe depends on the coupling strength and the dephasing rate and can be tuned by changing the width of the tunnelling barrier.
We have investigated the dispersive properties of tunnelling-induced transparency in asymmetric double quantum well structures where two excited states are coupled by resonant tunnelling through a thin barrier in a three-level system of electronic subbands,The intersubband transitions exhibit high disperision at zero absorption,which leads to the slow light velocity in this medium as compared with that in vacuum(c=3×10^8).The group velocity in a specific GaAs/AlGaAs sample is calculated to be ug=c/4.30,This structure can be used to compensate for the dispersion and energy loss in fibre optical communications.
The authors designed an asymmetric double quantum well structure with three subbands in the conduction band,and then calculated energy values of the three subbands with the effective-mass Schrodinger equation of confined electrons.In particular,the two adjacent excited subbands were correlated to wave function due to the electronic tunneling effect.A weak probe field coupling the ground subband to the two excited subbands was found to have a double-peak absorption spectrum with an in-between transparency window.Applying a DC electric field on this double quantum well structure,one may easily change the ratio of dipole moments on the two probe transitions,and then effectively manipulate relative amplitudes of the two absorption peaks and the dispersion curve in the transparency window.
We propose a new class of intersubband lasers and amplifiers that achieve net gain without population inversion. The laser scheme is based on a unipolar semiconductor double quantum- well structure where gain occurs at a transition between conduction band subbands. In order to achieve net gain without inversion, we utilize Fano-type interferences. The semiconductor laser scheme that we are considering is analogous to the atomic lambda system that has been extensively analyzed in the context of electromagnetically induced transparency and lasing without inversion. A coherent coupling field however, is not required in the present scheme. The electronic coherence necessary for Fano-type interferences is established by resonant tunneling. For nonlinear optics applications, the asymmetry of the structure allows for (chi) (2) processes and therefore higher conversion efficiency or parametric gain.