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Applied Physics Letters

Tunneling induced transparency: Fano interference in intersubband transitions

Holger Schmidt, K. L. Campman, Arthur C. Gossard, Ataç İmamoğlu

Published Jun 23, 1997• 253 citations
Publisher

Abstract

We report the observation of tunneling induced transparency in asymmetric double quantum well structures. Resonant tunneling through a thin barrier is used to coherently couple the two upper states in a three level system of electronic subbands in a GaAs/AlGaAs structure. This creates Fano-type interferences for the collective intersubband excitations in the absorption from the ground state, analogous to electromagnetically induced transparency (EIT) in atomic systems. We observe a 50% reduction in absorption between the subband resonances which can be explained by taking into account the coherent coupling of the upper states. We analyze the bias dependent absorption spectra and determine the relevant lifetime broadening and dephasing rates for the transitions.

DOI
10.1063/1.119199

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We report the observation of tunneling induced transparency in asymmetric double quantum well structures. Resonant tunneling through a thin barrier is used to coherently couple the two upper states in a three level system of electronic subbands in a GaAs/AlGaAs structure. This creates Fano-type interferences for the collective intersubband excitations in the absorption from the ground state, analogous to electromagnetically induced transparency (EIT) in atomic systems. We observe a 50% reduction in absorption between the subband resonances which can be explained by taking into account the coherent coupling of the upper states. We analyze the bias dependent absorption spectra and determine the relevant lifetime broadening and dephasing rates for the transitions.
We have investigated the dispersive properties of tunnelling-induced transparency in asymmetric double quantum well structures where two excited states are coupled by resonant tunnelling through a thin barrier in a three-level system of electronic subbands. The intersubband transitions exhibit high dispersion at zero absorption, which leads to the slow light velocity in this medium as compared with that in vacuum ( c =3×10 8 ). The group velocity in a specific GaAs/AlGaAs sample is calculated to be v g = c /4.30. This structure can be used to compensate for the dispersion and energy loss in fibre optical communications.
We have investigated the dispersive properties of tunnelling-induced transparency in asymmetric double quantum well structures where two excited states are coupled by resonant tunnelling through a thin barrier in a three-level system of electronic subbands,The intersubband transitions exhibit high disperision at zero absorption,which leads to the slow light velocity in this medium as compared with that in vacuum(c=3×10^8).The group velocity in a specific GaAs/AlGaAs sample is calculated to be ug=c/4.30,This structure can be used to compensate for the dispersion and energy loss in fibre optical communications.
The phenomenon of electromagnetically induced transparency, which was discovered recently in atomic systems, is demonstrated for the first in a subband quantum well system. Applying strong coupling field (Rabi frequency is on the same order as the intersubband linewidth), which is two- photon-resonant with the 1 - 3 intersubband transition, produces dramatic change in the 1 - 2 intersubband absorption profile. This effect can be accounted for in terms of 1 - 2 and 2 - 3 dipoles being driven into coherence by a strong coupling field; it is not related to self- induced transparency or spectral hole-burning (the frequency of the coupling field is quite different from that of 1 - 2 resonance) and, similar to Fano-type interference, is a pure result of destructive interference of probability amplitudes.
We propose a new class of intersubband lasers and amplifiers that achieve net gain without population inversion. The laser scheme is based on a unipolar semiconductor double quantum- well structure where gain occurs at a transition between conduction band subbands. In order to achieve net gain without inversion, we utilize Fano-type interferences. The semiconductor laser scheme that we are considering is analogous to the atomic lambda system that has been extensively analyzed in the context of electromagnetically induced transparency and lasing without inversion. A coherent coupling field however, is not required in the present scheme. The electronic coherence necessary for Fano-type interferences is established by resonant tunneling. For nonlinear optics applications, the asymmetry of the structure allows for (chi) (2) processes and therefore higher conversion efficiency or parametric gain.
We report the measurement of the transient intersubband absorption in a coupled quantum well semiconductor structure. Pulsed interband excitation is used to prepare a coherent population in the two lowest states of a three level system of electronic subbands. The time-dependent absorption to the upper state is probed by midinfrared time-domain spectroscopy. For certain pump–probe delay times we observe in the intersubband absorption spectra typical signatures of quantum interference: regions with reduced or enhanced absorption.