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Applied Physics Letters

Pulse-induced quantum interference of intersubband transitions in coupled quantum wells

Thomas G. Muller, Wolfgang Parz, G. Strasser, K. Unterrainer

Published Dec 29, 2003• 34 citations
Publisher

Abstract

We report the measurement of the transient intersubband absorption in a coupled quantum well semiconductor structure. Pulsed interband excitation is used to prepare a coherent population in the two lowest states of a three level system of electronic subbands. The time-dependent absorption to the upper state is probed by midinfrared time-domain spectroscopy. For certain pump–probe delay times we observe in the intersubband absorption spectra typical signatures of quantum interference: regions with reduced or enhanced absorption.

DOI
10.1063/1.1638881

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We report the measurement of the transient intersubband absorption in a coupled quantum well semiconductor structure. Pulsed interband excitation is used to prepare a coherent population in the two lowest states of a three level system of electronic subbands. The time-dependent absorption to the upper state is probed by midinfrared time-domain spectroscopy. For certain pump–probe delay times we observe in the intersubband absorption spectra typical signatures of quantum interference: regions with reduced or enhanced absorption.
The improved density-functional theory is employed to obtain the eigenstates of electrons in an asymmetric quantum well. On the basis of calculated eigenstates, the semiconductor Bloch equations are used to calculate the transient density matrix when a pulsed intersubband laser coupling is applied to the system. The new dynamics of the individual absorption peaks is analyzed for the first time by use of a self-consistent-field theory. Based on this, the time-averaged optical spectrum is calculated to show the coherent-transition-induced quantum interference in the system. The new phenomena of probe-field amplification is observed, and the threshold laser intensity for observing it is given.
When two electron conduction subbands in a doped quantum well are coupled by a coherent laser pumping, electromagnetically induced transparency and Rabi splitting in the interband absorption spectrum of a probe light are found for steady electron dressed states. The effect of light-electron interaction on electron and hole eigenenergies and states are calculated using a generalized density-functional approach. The change of absorption coefficient with the pump field amplitude is studied and explained.
This paper presents the current results of field-induced quantum interference in semiconductor quantum wells. Three-level systems with two conduction subbands in single and double quantum wells coupled by a resonant field are studied. We investigate effects of the Coulomb and field-induced electronic renormalizations of the energy subbands and steady eigenstates of electrons. The random-phase and ladder approximations have been used to calculate the linear interband and intersubband optical absorptions and refractive indices. The effect of collective dipole moment on the nonlinear susceptibility has been incorporated into the study by using a local-field approach. Lasing without population inversion, electromagnetically induced transparency, and enhanced nonlinearity with reduced absorption inside the intersubband-coupled single quantum well and dc-field coupled double quantum wells are found.
We report the observation of tunneling induced transparency in asymmetric double quantum well structures. Resonant tunneling through a thin barrier is used to coherently couple the two upper states in a three level system of electronic subbands in a GaAs/AlGaAs structure. This creates Fano-type interferences for the collective intersubband excitations in the absorption from the ground state, analogous to electromagnetically induced transparency (EIT) in atomic systems. We observe a 50% reduction in absorption between the subband resonances which can be explained by taking into account the coherent coupling of the upper states. We analyze the bias dependent absorption spectra and determine the relevant lifetime broadening and dephasing rates for the transitions.
We explore the transient characteristics of an interband resonant light modulation process by ultrashort intersubband resonant light pulses in semiconductor quantum wells (QW's). The modulation characteristics in a three-level semiconductor QW system, including the effects due to in-plane momentum, have been investigated by a numerical analysis of the coupled Bloch equations using a density-matrix approach. We have studied the effect of the carrier density and the nature of the intersubband coupling light on the transient absorption features of the interband light. The modulation process has been compared in doped and undoped QW's. The switching behavior of the strong interband light field in presence of a train of intersubband light pulses has also been discussed.
Mechanisms for reduced interband absorption using intersubband coherence or intersubband coupling in semiconductor quantum wells are analyzed by exactly solving the density matrix equation. By placing some mild limitations on the diagonal density matrix elements, general analytic solutions are obtained without weak-field restrictions. Our solutions demonstrate reduced absorption, various nonlinear processes, and coupling-field-modulation of interband transitions. Our results agree well with previous results for three-level atomic systems, give insights into nonlinear mechanisms, and point out the importance of nonperturbative approaches to this class of problems.>