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Journal of Nonlinear Optical Physics & Materials

FIELD-INDUCED QUANTUM INTERFERENCE IN SEMICONDUCTOR QUANTUM WELLS FOR LASING WITHOUT POPULATION INVERSION AND ELECTROMAGNETICALLY INDUCED TRANSPARENCY

Y. ZHAO, Danhong Huang, C. WU

Published Apr 1, 1995• 5 citations

Abstract

This paper presents the current results of field-induced quantum interference in semiconductor quantum wells. Three-level systems with two conduction subbands in single and double quantum wells coupled by a resonant field are studied. We investigate effects of the Coulomb and field-induced electronic renormalizations of the energy subbands and steady eigenstates of electrons. The random-phase and ladder approximations have been used to calculate the linear interband and intersubband optical absorptions and refractive indices. The effect of collective dipole moment on the nonlinear susceptibility has been incorporated into the study by using a local-field approach. Lasing without population inversion, electromagnetically induced transparency, and enhanced nonlinearity with reduced absorption inside the intersubband-coupled single quantum well and dc-field coupled double quantum wells are found.

DOI: 10.1142/s0218863595000112

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