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IEEE Journal of Quantum Electronics

Analysis of transient interband light modulation by ultrashort intersubband resonant light pulses in semiconductor quantum wells

Arup Neogi, Yutaka Takahashi, Hitoshi Kawaguchi

Published Jan 1, 1997• 13 citations
Publisher

Abstract

We explore the transient characteristics of an interband resonant light modulation process by ultrashort intersubband resonant light pulses in semiconductor quantum wells (QW's). The modulation characteristics in a three-level semiconductor QW system, including the effects due to in-plane momentum, have been investigated by a numerical analysis of the coupled Bloch equations using a density-matrix approach. We have studied the effect of the carrier density and the nature of the intersubband coupling light on the transient absorption features of the interband light. The modulation process has been compared in doped and undoped QW's. The switching behavior of the strong interband light field in presence of a train of intersubband light pulses has also been discussed.

DOI
10.1109/3.641321

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We explore the transient characteristics of an interband resonant light modulation process by ultrashort intersubband resonant light pulses in semiconductor quantum wells (QW's). The modulation characteristics in a three-level semiconductor QW system, including the effects due to in-plane momentum, have been investigated by a numerical analysis of the coupled Bloch equations using a density-matrix approach. We have studied the effect of the carrier density and the nature of the intersubband coupling light on the transient absorption features of the interband light. The modulation process has been compared in doped and undoped QW's. The switching behavior of the strong interband light field in presence of a train of intersubband light pulses has also been discussed.
We analyze the optical modulation of an interband resonant light pulse by intersubband resonant light pulses in a three-level quantum well system. The origin of the third order self-saturation optical nonlinearity resulting in the modification of the interband light absorption is assumed to lie in the carrier density modulation induced by the interband and intersubband transitions. The optical nonlinearity can be optimized to achieve the maximum modulation by applying control light pulses shorter than the intersubband energy relaxation time but longer than the intersubband phase relaxation time. We have also experimentally investigated the material system suitable for optical communication regime and have observed that the In0.53Ga0.47As/AlAs0.56Sb0.44 quantum well lattice matched to InP yielding an intersubband transition as short as 1.4 μm is the most suitable system for the proposed modulation scheme.
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Mechanisms for reduced interband absorption using intersubband coherence or intersubband coupling in semiconductor quantum wells are analyzed by exactly solving the density matrix equation. By placing some mild limitations on the diagonal density matrix elements, general analytic solutions are obtained without weak-field restrictions. Our solutions demonstrate reduced absorption, various nonlinear processes, and coupling-field-modulation of interband transitions. Our results agree well with previous results for three-level atomic systems, give insights into nonlinear mechanisms, and point out the importance of nonperturbative approaches to this class of problems.>
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The optimum condition for achieving highly efficient ultrafast all-optical pulse modulation by modification of the absorption of a pulsed interband light field by ultrasubband control-light pulses in a doped quantum well is investigated. The modulation efficiency in the femtosecond domain can be maximized by an intersubband control light with a pulse width (200 fs) that is comparable with the phase-relaxation time of the system and an intensity that is close to the intersubband saturation intensity.