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Infrared, Millimeter-Wave, and Terahertz Technologies

One-dimensional linear integration technique for THz-band SIS

Yu-Min Fan, Boliang Liu, Ming Yao, Jie Liu, Jin-Biao Zhao, Sheng‐Cai Shi, Dong Liu

Published Oct 12, 2023• 0 citations
Publisher

Abstract

Superconductor-Insulator-Superconductor (SIS) mixers are currently the most widely used detectors in astronomical observations in the terahertz band. To meet the demands of future large-aperture terahertz radio telescopes for multipixel applications, this work focused on the integration technology of a 660 GHz 1×4 one-dimensional linear array SIS mixers. The SIS mixers based on Nb/AlN/NbN twin tunnel junctions. We developed the uniform distribution of local oscillator power by using an integrated waveguide and multi-path local oscillator power distribution network. We also integrated the passive frequency doubler and tripler at low temperature, and integrated four low-noise amplifiers with the mixer in the same block, resulting in a more compact structure. As a result, we successfully realized the simultaneous operation of four mixers in a cryogenic Dewar. This paper will provide a detailed description of the relevant design and testing results.

DOI
10.1117/12.2686640

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IEEE Transactions on Applied Superconductivity•Mar 1, 2001•21 citations
Superconductor-Insulator-Superconductor (SIS) mixers are currently the most widely used detectors in astronomical observations in the terahertz band. To meet the demands of future large-aperture terahertz radio telescopes for multipixel applications, this work focused on the integration technology of a 660 GHz 1×4 one-dimensional linear array SIS mixers. The SIS mixers based on Nb/AlN/NbN twin tunnel junctions. We developed the uniform distribution of local oscillator power by using an integrated waveguide and multi-path local oscillator power distribution network. We also integrated the passive frequency doubler and tripler at low temperature, and integrated four low-noise amplifiers with the mixer in the same block, resulting in a more compact structure. As a result, we successfully realized the simultaneous operation of four mixers in a cryogenic Dewar. This paper will provide a detailed description of the relevant design and testing results.
Heterodyne mixers based on superconducting SIS (superconductor-insulator-superconductor) tunnel junctions have been demonstrated to be the most sensitive coherent detectors at millimeter and submillimeter wavelengths. In fact, conventional superconducting SIS mixers with Nb/AlOx/Nb junction and Nb/SiO2/Nb tuning circuit have shown good performances with the noise temperature reaching as low as three times the quantum limit below 0.7THz, which is the gap frequency of Nb-based SIS junctions. However, due to the large loss in Nb thin-film superconducting microstrip lines, the noise performance of Nb SIS mixers deteriorates significantly above 0.7THz. With a gap frequency double that of Nb-based SIS junctions, NbN-based SIS junctions are of particular interest for the development of heterodyne mixers in the terahertz region. Considering the bandwidth and output power of local-oscillator (LO) signal sources are quite limited around 1THz, we firstly develop a waveguide NbN-based SIS mixer at 0.5THz. Three types of SIS junctions, i.e., long junction, parallel-connected tunnel junction (PCTJ) and distributed junction array (DJ) are investigated. They are all comprised of NbN-AlN-NbN tri-layer fabricated on an MgO substrate and have the same current density (Jc) of 10kA/cm2. In this paper, we describe their design, fabrication and preliminary experimental results.
The terahertz band, a unique segment of the electromagnetic spectrum, is crucial for observing the cold, dark universe and plays a pivotal role in cutting-edge scientific research, including the study of cosmic environments that support life and imaging black holes. High-sensitivity superconductor–insulator–superconductor (SIS) mixers are essential detectors for terahertz astronomical telescopes and interferometric arrays. Compared to the commonly used classical Nb/AlO x /Nb superconducting tunnel junction, the Nb/AlN/NbN hybrid superconducting tunnel junction has a higher energy gap voltage and can achieve a higher critical current density. This makes it particularly promising for the development of ultra-wideband, high-sensitivity coherent detectors or mixers in various scientific research fields. In this paper, we present a superconducting SIS mixer based on Nb/AlN/NbN parallel-connected twin junctions (PCTJ), which has a bandwidth extending up to 490 GHz–720 GHz. The best achieved double-sideband (DSB) noise temperature (sensitivity) is below three times the quantum noise level.
Two years ago, we have fabricated and tested superconductor-insulator-superconductor (SIS) mixers based on Nb/AlN/NbN twin tunnel junctions for waveguide receiver operating in frequency range of 790 - 950 GHz, which demonstrated noise temperature from 250 K at low frequencies to 500 K at the high end of the band. Due to high current density of the junctions (up to 30 kA/cm2 ), a wideband design was realized. Based on result for twin junction, a new mixer design with single SIS junction was proposed and produced. The single junction design is expected to have narrower frequency range than twin-based one, but still wide enough, and provide better coupling in the middle of the band. In addition, the critical current suppression will be much better, than for twin junction, which has an intrinsic problem of difference between areas of individual junctions. The SIS junction in new design is made by Nb/AlN/NbN technology and incorporated in a microstrip line consisting of a 300 nm thick bottom electrode (ground plane) made of NbTiN and a 500 nm thick top electrode made of Al. The top Al electrode is passivated by the SiO2 layer for protection. The DC tects of the fabricated wafer shows, that optimization of the technology allowed to realize gap voltage of 3.2 mV even for junctions of 0.5 square micron area fabricated on the NbTiN bottom layer. The FTS and noise temperature measurement of new mixers will be done in the nearest future and will be presented in comparison with the twin junction design results at the conference.
A fixed-tuned SIS(Superconductor-Insulator-Superconductor) mixer across 120∼180 GHz band has been developed. This mixer employs an SIS chip fabricated by Nobeyama radio observatory which consists of a series array of 6 Nb/Al-AlO/Nb junctions in a microstrip line on a fused quartz substrate. The SIS chip is placed at the center of the half-height waveguide mixer mount to have a good incoming signal coupling over the whole frequency band. No mechanical tuner was used in the SIS mixer and the RF signal and local oscillator power are injected to the mixer via a cooled cross-guide coupler. In order to prevent the IF signal loss, the If output impedance of the SIS mixer was matched to the 50 input impedance of the IF chain. Measured double sideband noise temperatures of a receiver using the SIS mixer are 32∼131 K over 120∼180 GHz band. The developed SIS mixer is now in use for radio astronomical observations on the TRAO 14 m radio telescope.
Heterodyne mixers based on superconducting SIS (superconductor-insulator-superconductor) tunnel junctions have been demonstrated to be the most sensitive coherent detectors at millimeter and submillimeter wavelengths. In fact, conventional superconducting SIS mixers with Nb/AIO(x)/Nb junction and Nb/SiO2/Nb tuning circuit have shown good performances with the noise temperature reaching as low as three times the quantum limit below 0.7THz, which is the gap frequency of Nb-based SIS junctions. However, due to the large loss in Nb thin-film superconducting microstrip lines, the noise performance of Nb SIS mixers deteriorates significantly above 0.7THz. With a gap frequency double that of Nb-based SIS junctions, NbN-based SIS junctions are of particular interest for the development of heterodyne mixers in the terahertz region.
We have designed, fabricated, and tested terahertz superconductor-insulator-superconductor (SIS) mixers having a self-compensated NbN/AlN/NbN tunnel junction and an epitaxially grown NbN/MgO/NbN microstripline. The junction as a distributed element was 0.8-/spl mu/m wide and 2.4-/spl mu/m long, and its current density was 50 kA/cm/sup 2/. The microstripline consisted of a 200-nm-thick NbN ground plane, a 180-nm-thick MgO insulator, and a 350-nm-thick NbN wiring layer. An investigation of the mixer in our receiver configuration showed flat noise characteristics from 870 to 960 GHz. The lowest receiver noise temperature of about 550 K was obtained at 909 GHz, including a 9-/spl mu/m-thick Mylar beam splitter loss and other optical losses. These characteristics suggest that SIS mixers with self-compensated NbN/AlN/NbN junctions and NbN/MgO/NbN microstriplines are appropriate for used in wideband and low-noise operations at terahertz frequencies.