Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

0.5-THz waveguide SIS mixers with NbN/AlN/NbN technology - art. no. 684013

Jing Li, Takeda Masanon, Zhen Wang

Published Jan 1, 2008• 0 citations
OpenAlex

Abstract

Heterodyne mixers based on superconducting SIS (superconductor-insulator-superconductor) tunnel junctions have been demonstrated to be the most sensitive coherent detectors at millimeter and submillimeter wavelengths. In fact, conventional superconducting SIS mixers with Nb/AIO(x)/Nb junction and Nb/SiO2/Nb tuning circuit have shown good performances with the noise temperature reaching as low as three times the quantum limit below 0.7THz, which is the gap frequency of Nb-based SIS junctions. However, due to the large loss in Nb thin-film superconducting microstrip lines, the noise performance of Nb SIS mixers deteriorates significantly above 0.7THz. With a gap frequency double that of Nb-based SIS junctions, NbN-based SIS junctions are of particular interest for the development of heterodyne mixers in the terahertz region.

Related papers

0.5-THz waveguide SIS mixers with NbN/AlN/NbN technology

Jing Li, Masanori Takeda, Zhen Wang +1 more

Heterodyne mixers based on superconducting SIS (superconductor-insulator-superconductor) tunnel junctions have been demonstrated to be the most sensitive coherent detectors at millimeter and submillimeter wavelengths. In fact, conventional superconducting SIS mixers with Nb/AlOx/Nb junction and Nb/SiO2/Nb tuning circuit have shown good performances with the noise temperature reaching as low as three times the quantum limit below 0.7THz, which is the gap frequency of Nb-based SIS junctions. However, due to the large loss in Nb thin-film superconducting microstrip lines, the noise performance of Nb SIS mixers deteriorates significantly above 0.7THz. With a gap frequency double that of Nb-based SIS junctions, NbN-based SIS junctions are of particular interest for the development of heterodyne mixers in the terahertz region. Considering the bandwidth and output power of local-oscillator (LO) signal sources are quite limited around 1THz, we firstly develop a waveguide NbN-based SIS mixer at 0.5THz. Three types of SIS junctions, i.e., long junction, parallel-connected tunnel junction (PCTJ) and distributed junction array (DJ) are investigated. They are all comprised of NbN-AlN-NbN tri-layer fabricated on an MgO substrate and have the same current density (Jc) of 10kA/cm2. In this paper, we describe their design, fabrication and preliminary experimental results.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Nov 29, 2007•3 citations

Terahertz high-sensitivity SIS mixer based on Nb–AlN–NbN hybrid superconducting tunnel junctions

Bo-Liang 博梁 Liu 刘, Dong 冬 Liu 刘, Ming Yao +8 more

The terahertz band, a unique segment of the electromagnetic spectrum, is crucial for observing the cold, dark universe and plays a pivotal role in cutting-edge scientific research, including the study of cosmic environments that support life and imaging black holes. High-sensitivity superconductor–insulator–superconductor (SIS) mixers are essential detectors for terahertz astronomical telescopes and interferometric arrays. Compared to the commonly used classical Nb/AlO x /Nb superconducting tunnel junction, the Nb/AlN/NbN hybrid superconducting tunnel junction has a higher energy gap voltage and can achieve a higher critical current density. This makes it particularly promising for the development of ultra-wideband, high-sensitivity coherent detectors or mixers in various scientific research fields. In this paper, we present a superconducting SIS mixer based on Nb/AlN/NbN parallel-connected twin junctions (PCTJ), which has a bandwidth extending up to 490 GHz–720 GHz. The best achieved double-sideband (DSB) noise temperature (sensitivity) is below three times the quantum noise level.

Chinese Physics B•Feb 22, 2024•5 citations

Noise performance of a 200–280 GHz mixer with Nb-AlN-NbN superconducting tunnel junctions

Boliang Liu, Dong Liu, Ming Yao +6 more

Superconductor–insulator–superconductor (SIS) mixers remain the choice of heterodyne mixers for single-dish telescopes and interferometers at millimeter and submillimeter wavelengths. Compared with conventional Nb/AlOx/Nb superconducting tunnel junctions, Nb/AlN/NbN ones have larger gap voltage and may reach critical-current density beyond 10kA/cm2, which are both of particularly interest in developing broadband SIS mixers. Here we report on the design and measurement of an SIS mixer based on Nb/AlN/NbN parallel connected twin junctions (PCTJ) incorporating NbTiN/SiO2/Al microstrip circuit. The junctions have a gap voltage of 3.18mV and a critical-current density of 15kA/cm2. The measured receiver noise temperature reach 5hν/kB among 200-260GHz band, and the mixer’s fractional bandwidth is about 40% centered at 230GHz.

Infrared, Millimeter-Wave, and Terahertz Technologies•Dec 16, 2022•0 citations

SIS and bolometer mixers for terahertz frequencies

K. H. Gundlach, Matthias Schicke

The need for extremely sensitive heterodyne receivers in the astronomical community has created strong efforts to develop appropriate frequency mixers. Nb/Al-Al x O y -Nb tunnel junctions with Nb matching circuits lead to best results up to approximately 700 GHz, the energy-gap frequency of Nb. For higher frequencies the Nb in the matching circuit becomes lossy and is replaced beyond 800 GHz by Al (which operates in the normal conducting state). The gap frequency of NbN is as high as 1.2 THz, but NbN technology is not yet mature. Practical films still have substantial radio frequency losses and the barrier of NbN tunnel junctions is too leaky. More recently, NbTiN, for which the gap frequency is also about 1.2 THz, was found to have very low losses, and is therefore a good choice for tuning circuits. New interesting tunnel junctions for mixers around 1 THz are NbTiN-MgO-NbTiN and Nb/Al-AlN x -NbTiN. Excellent performance from about 1 THz up to several terahertz can be expected from hot-electron transition-edge bolometer mixers. They consist of NbN or Nb microbridges, they do not need matching circuits and their frequency limit is not determined by the gap frequency.

Superconductor Science and Technology•Nov 23, 2000•20 citations

Low-noise THz Niobium SIS Mixers

Mei Bin

This thesis describes the development of low-noise heterodyne receivers at THz frequencies for submillimeter astronomy using Nb-based superconductor-insulator-superconductor (SIS) tunneling junctions. The mixers utilize a quasi-optical configuration which consists of a planar twin-slot antenna and antisymmetrically-fed two-junctions on an antireflection-coated silicon hyperhemispherical lens. On-chip integrated tuning circuits, in the form of microstrip lines, are used to obtain maximum coupling efficiency in the designed frequency band. To reduce the rf losses in the integrated tuning circuits above the superconducting Nb gap frequency (~ 700 GHz), normal-metal Al is used to replace Nb as the tuning circuits. To account the rf losses in the micros trip lines, we calculated the surface impedance of the AI films using the nonlocal anomalous skin effect for finite thickness films. Nb films were calculated using the Mattis-Bardeen theory in the extreme anomalous limit. Our calculations show that the losses of the Al and Nb microstrip lines are about equal at 830 GHz. For Al-wiring and Nb-wiring mixers both optimized at 1050 GHz, the RF coupling efficiency of Al-wiring mixer is higher than that of Nb-wiring one by almost 50%. We have designed both Nb-wiring and Al-wiring mixers below and above the gap frequency. A Fourier transform spectrometer (FTS) has been constructed especially for the study of the frequency response of SIS receivers. This FTS features large aperture size (10 inch) and high frequency resolution (114 MHz). The FTS spectra, obtained using the SIS receivers as direct detectors on the FTS, agree quite well with our theoretical simulations. We have also, for the first time, measured the FTS heterodyne response of an SIS mixer at sufficiently high resolution to resolve the LO and the sidebands. Heterodyne measurements of our SIS receivers with Nb-wiring or Al-wiring have yielded results which arc among the best reported to date for broadband heterodyne receivers. The Nb-wiring mixers, covering 400 - 850 GHz band with four separate fixed-tuned mixers, have uncorrected DSB receiver noise temperature around 5hv/kb to 700 GHz, and better than 540 K at 808 GHz. An Al-wiring mixer designed for 1050 GHz band has an uncorrected DSB receiver noise temperature 840 K at 1042 GHz and 2.5 K bath temperature. Mixer performance analysis shows that Nb junctions can work well up to twice the gap frequency and the major cause of loss above the gap frequency is the rf losses in the microstrip tuning structures. Further advances in THz SIS mixers may be possible using circuits fabricated with higher-gap superconductors such as NbN. However, this will require high-quality films with low RF surface resistance at THz frequencies.

•Sep 1, 1997•8 citations

Characterization of the Mixing Performance of All-NbN Superconducting Tunnel Junctions at 0.5 THz

Jing Li, Mahoto Takeda, Zhen Wang +1 more

With a gap frequency of 1.4 THz, all-NbN Superconductor-Insulator-Superconductor (SIS) junctions are potentially applicable to sensitive heterodyne mixers for THz astronomy and atmospheric research. In this paper, we report the design, fabrication, and performance characterization of a 0.5-THz waveguide SIS mixer incorporating twin NbN/AlN/NbN junctions and an NbN/MgO/NbN tuning circuit with no impedance transformers. The noise performance of two NbN SIS junctions with different tuning inductances is measured, compared with the simulated results without and with the multiple Andreev reflection (MAR) effect taken into account, and also compared with the video detection response. In addition, the IF-output-power stability and aging effect of fabricated NbN SIS junctions are investigated.

IEEE Transactions on Applied Superconductivity•Jun 1, 2009•13 citations
Heterodyne mixers based on superconducting SIS (superconductor-insulator-superconductor) tunnel junctions have been demonstrated to be the most sensitive coherent detectors at millimeter and submillimeter wavelengths. In fact, conventional superconducting SIS mixers with Nb/AIO(x)/Nb junction and Nb/SiO2/Nb tuning circuit have shown good performances with the noise temperature reaching as low as three times the quantum limit below 0.7THz, which is the gap frequency of Nb-based SIS junctions. However, due to the large loss in Nb thin-film superconducting microstrip lines, the noise performance of Nb SIS mixers deteriorates significantly above 0.7THz. With a gap frequency double that of Nb-based SIS junctions, NbN-based SIS junctions are of particular interest for the development of heterodyne mixers in the terahertz region.
Heterodyne mixers based on superconducting SIS (superconductor-insulator-superconductor) tunnel junctions have been demonstrated to be the most sensitive coherent detectors at millimeter and submillimeter wavelengths. In fact, conventional superconducting SIS mixers with Nb/AlOx/Nb junction and Nb/SiO2/Nb tuning circuit have shown good performances with the noise temperature reaching as low as three times the quantum limit below 0.7THz, which is the gap frequency of Nb-based SIS junctions. However, due to the large loss in Nb thin-film superconducting microstrip lines, the noise performance of Nb SIS mixers deteriorates significantly above 0.7THz. With a gap frequency double that of Nb-based SIS junctions, NbN-based SIS junctions are of particular interest for the development of heterodyne mixers in the terahertz region. Considering the bandwidth and output power of local-oscillator (LO) signal sources are quite limited around 1THz, we firstly develop a waveguide NbN-based SIS mixer at 0.5THz. Three types of SIS junctions, i.e., long junction, parallel-connected tunnel junction (PCTJ) and distributed junction array (DJ) are investigated. They are all comprised of NbN-AlN-NbN tri-layer fabricated on an MgO substrate and have the same current density (Jc) of 10kA/cm2. In this paper, we describe their design, fabrication and preliminary experimental results.
The terahertz band, a unique segment of the electromagnetic spectrum, is crucial for observing the cold, dark universe and plays a pivotal role in cutting-edge scientific research, including the study of cosmic environments that support life and imaging black holes. High-sensitivity superconductor–insulator–superconductor (SIS) mixers are essential detectors for terahertz astronomical telescopes and interferometric arrays. Compared to the commonly used classical Nb/AlO x /Nb superconducting tunnel junction, the Nb/AlN/NbN hybrid superconducting tunnel junction has a higher energy gap voltage and can achieve a higher critical current density. This makes it particularly promising for the development of ultra-wideband, high-sensitivity coherent detectors or mixers in various scientific research fields. In this paper, we present a superconducting SIS mixer based on Nb/AlN/NbN parallel-connected twin junctions (PCTJ), which has a bandwidth extending up to 490 GHz–720 GHz. The best achieved double-sideband (DSB) noise temperature (sensitivity) is below three times the quantum noise level.
Superconductor–insulator–superconductor (SIS) mixers remain the choice of heterodyne mixers for single-dish telescopes and interferometers at millimeter and submillimeter wavelengths. Compared with conventional Nb/AlOx/Nb superconducting tunnel junctions, Nb/AlN/NbN ones have larger gap voltage and may reach critical-current density beyond 10kA/cm2, which are both of particularly interest in developing broadband SIS mixers. Here we report on the design and measurement of an SIS mixer based on Nb/AlN/NbN parallel connected twin junctions (PCTJ) incorporating NbTiN/SiO2/Al microstrip circuit. The junctions have a gap voltage of 3.18mV and a critical-current density of 15kA/cm2. The measured receiver noise temperature reach 5hν/kB among 200-260GHz band, and the mixer’s fractional bandwidth is about 40% centered at 230GHz.
The need for extremely sensitive heterodyne receivers in the astronomical community has created strong efforts to develop appropriate frequency mixers. Nb/Al-Al x O y -Nb tunnel junctions with Nb matching circuits lead to best results up to approximately 700 GHz, the energy-gap frequency of Nb. For higher frequencies the Nb in the matching circuit becomes lossy and is replaced beyond 800 GHz by Al (which operates in the normal conducting state). The gap frequency of NbN is as high as 1.2 THz, but NbN technology is not yet mature. Practical films still have substantial radio frequency losses and the barrier of NbN tunnel junctions is too leaky. More recently, NbTiN, for which the gap frequency is also about 1.2 THz, was found to have very low losses, and is therefore a good choice for tuning circuits. New interesting tunnel junctions for mixers around 1 THz are NbTiN-MgO-NbTiN and Nb/Al-AlN x -NbTiN. Excellent performance from about 1 THz up to several terahertz can be expected from hot-electron transition-edge bolometer mixers. They consist of NbN or Nb microbridges, they do not need matching circuits and their frequency limit is not determined by the gap frequency.
This thesis describes the development of low-noise heterodyne receivers at THz frequencies for submillimeter astronomy using Nb-based superconductor-insulator-superconductor (SIS) tunneling junctions. The mixers utilize a quasi-optical configuration which consists of a planar twin-slot antenna and antisymmetrically-fed two-junctions on an antireflection-coated silicon hyperhemispherical lens. On-chip integrated tuning circuits, in the form of microstrip lines, are used to obtain maximum coupling efficiency in the designed frequency band. To reduce the rf losses in the integrated tuning circuits above the superconducting Nb gap frequency (~ 700 GHz), normal-metal Al is used to replace Nb as the tuning circuits. To account the rf losses in the micros trip lines, we calculated the surface impedance of the AI films using the nonlocal anomalous skin effect for finite thickness films. Nb films were calculated using the Mattis-Bardeen theory in the extreme anomalous limit. Our calculations show that the losses of the Al and Nb microstrip lines are about equal at 830 GHz. For Al-wiring and Nb-wiring mixers both optimized at 1050 GHz, the RF coupling efficiency of Al-wiring mixer is higher than that of Nb-wiring one by almost 50%. We have designed both Nb-wiring and Al-wiring mixers below and above the gap frequency. A Fourier transform spectrometer (FTS) has been constructed especially for the study of the frequency response of SIS receivers. This FTS features large aperture size (10 inch) and high frequency resolution (114 MHz). The FTS spectra, obtained using the SIS receivers as direct detectors on the FTS, agree quite well with our theoretical simulations. We have also, for the first time, measured the FTS heterodyne response of an SIS mixer at sufficiently high resolution to resolve the LO and the sidebands. Heterodyne measurements of our SIS receivers with Nb-wiring or Al-wiring have yielded results which arc among the best reported to date for broadband heterodyne receivers. The Nb-wiring mixers, covering 400 - 850 GHz band with four separate fixed-tuned mixers, have uncorrected DSB receiver noise temperature around 5hv/kb to 700 GHz, and better than 540 K at 808 GHz. An Al-wiring mixer designed for 1050 GHz band has an uncorrected DSB receiver noise temperature 840 K at 1042 GHz and 2.5 K bath temperature. Mixer performance analysis shows that Nb junctions can work well up to twice the gap frequency and the major cause of loss above the gap frequency is the rf losses in the microstrip tuning structures. Further advances in THz SIS mixers may be possible using circuits fabricated with higher-gap superconductors such as NbN. However, this will require high-quality films with low RF surface resistance at THz frequencies.
With a gap frequency of 1.4 THz, all-NbN Superconductor-Insulator-Superconductor (SIS) junctions are potentially applicable to sensitive heterodyne mixers for THz astronomy and atmospheric research. In this paper, we report the design, fabrication, and performance characterization of a 0.5-THz waveguide SIS mixer incorporating twin NbN/AlN/NbN junctions and an NbN/MgO/NbN tuning circuit with no impedance transformers. The noise performance of two NbN SIS junctions with different tuning inductances is measured, compared with the simulated results without and with the multiple Andreev reflection (MAR) effect taken into account, and also compared with the video detection response. In addition, the IF-output-power stability and aging effect of fabricated NbN SIS junctions are investigated.