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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

0.5-THz waveguide SIS mixers with NbN/AlN/NbN technology

Jing Li, Masanori Takeda, Zhen Wang, Sheng‐Cai Shi

Published Nov 29, 2007• 3 citations
Publisher

Abstract

Heterodyne mixers based on superconducting SIS (superconductor-insulator-superconductor) tunnel junctions have been demonstrated to be the most sensitive coherent detectors at millimeter and submillimeter wavelengths. In fact, conventional superconducting SIS mixers with Nb/AlOx/Nb junction and Nb/SiO2/Nb tuning circuit have shown good performances with the noise temperature reaching as low as three times the quantum limit below 0.7THz, which is the gap frequency of Nb-based SIS junctions. However, due to the large loss in Nb thin-film superconducting microstrip lines, the noise performance of Nb SIS mixers deteriorates significantly above 0.7THz. With a gap frequency double that of Nb-based SIS junctions, NbN-based SIS junctions are of particular interest for the development of heterodyne mixers in the terahertz region. Considering the bandwidth and output power of local-oscillator (LO) signal sources are quite limited around 1THz, we firstly develop a waveguide NbN-based SIS mixer at 0.5THz. Three types of SIS junctions, i.e., long junction, parallel-connected tunnel junction (PCTJ) and distributed junction array (DJ) are investigated. They are all comprised of NbN-AlN-NbN tri-layer fabricated on an MgO substrate and have the same current density (Jc) of 10kA/cm2. In this paper, we describe their design, fabrication and preliminary experimental results.

DOI
10.1117/12.755407

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IEEE Transactions on Applied Superconductivity•May 27, 2009•10 citations
Heterodyne mixers based on superconducting SIS (superconductor-insulator-superconductor) tunnel junctions have been demonstrated to be the most sensitive coherent detectors at millimeter and submillimeter wavelengths. In fact, conventional superconducting SIS mixers with Nb/AlOx/Nb junction and Nb/SiO2/Nb tuning circuit have shown good performances with the noise temperature reaching as low as three times the quantum limit below 0.7THz, which is the gap frequency of Nb-based SIS junctions. However, due to the large loss in Nb thin-film superconducting microstrip lines, the noise performance of Nb SIS mixers deteriorates significantly above 0.7THz. With a gap frequency double that of Nb-based SIS junctions, NbN-based SIS junctions are of particular interest for the development of heterodyne mixers in the terahertz region. Considering the bandwidth and output power of local-oscillator (LO) signal sources are quite limited around 1THz, we firstly develop a waveguide NbN-based SIS mixer at 0.5THz. Three types of SIS junctions, i.e., long junction, parallel-connected tunnel junction (PCTJ) and distributed junction array (DJ) are investigated. They are all comprised of NbN-AlN-NbN tri-layer fabricated on an MgO substrate and have the same current density (Jc) of 10kA/cm2. In this paper, we describe their design, fabrication and preliminary experimental results.
Heterodyne mixers based on superconducting SIS (superconductor-insulator-superconductor) tunnel junctions have been demonstrated to be the most sensitive coherent detectors at millimeter and submillimeter wavelengths. In fact, conventional superconducting SIS mixers with Nb/AIO(x)/Nb junction and Nb/SiO2/Nb tuning circuit have shown good performances with the noise temperature reaching as low as three times the quantum limit below 0.7THz, which is the gap frequency of Nb-based SIS junctions. However, due to the large loss in Nb thin-film superconducting microstrip lines, the noise performance of Nb SIS mixers deteriorates significantly above 0.7THz. With a gap frequency double that of Nb-based SIS junctions, NbN-based SIS junctions are of particular interest for the development of heterodyne mixers in the terahertz region.
The terahertz band, a unique segment of the electromagnetic spectrum, is crucial for observing the cold, dark universe and plays a pivotal role in cutting-edge scientific research, including the study of cosmic environments that support life and imaging black holes. High-sensitivity superconductor–insulator–superconductor (SIS) mixers are essential detectors for terahertz astronomical telescopes and interferometric arrays. Compared to the commonly used classical Nb/AlO x /Nb superconducting tunnel junction, the Nb/AlN/NbN hybrid superconducting tunnel junction has a higher energy gap voltage and can achieve a higher critical current density. This makes it particularly promising for the development of ultra-wideband, high-sensitivity coherent detectors or mixers in various scientific research fields. In this paper, we present a superconducting SIS mixer based on Nb/AlN/NbN parallel-connected twin junctions (PCTJ), which has a bandwidth extending up to 490 GHz–720 GHz. The best achieved double-sideband (DSB) noise temperature (sensitivity) is below three times the quantum noise level.
With a gap frequency of 1.4 THz, all-NbN Superconductor-Insulator-Superconductor (SIS) junctions are potentially applicable to sensitive heterodyne mixers for THz astronomy and atmospheric research. In this paper, we report the design, fabrication, and performance characterization of a 0.5-THz waveguide SIS mixer incorporating twin NbN/AlN/NbN junctions and an NbN/MgO/NbN tuning circuit with no impedance transformers. The noise performance of two NbN SIS junctions with different tuning inductances is measured, compared with the simulated results without and with the multiple Andreev reflection (MAR) effect taken into account, and also compared with the video detection response. In addition, the IF-output-power stability and aging effect of fabricated NbN SIS junctions are investigated.
Superconductor–insulator–superconductor (SIS) mixers remain the choice of heterodyne mixers for single-dish telescopes and interferometers at millimeter and submillimeter wavelengths. Compared with conventional Nb/AlOx/Nb superconducting tunnel junctions, Nb/AlN/NbN ones have larger gap voltage and may reach critical-current density beyond 10kA/cm2, which are both of particularly interest in developing broadband SIS mixers. Here we report on the design and measurement of an SIS mixer based on Nb/AlN/NbN parallel connected twin junctions (PCTJ) incorporating NbTiN/SiO2/Al microstrip circuit. The junctions have a gap voltage of 3.18mV and a critical-current density of 15kA/cm2. The measured receiver noise temperature reach 5hν/kB among 200-260GHz band, and the mixer’s fractional bandwidth is about 40% centered at 230GHz.
The low-noise performance of a waveguide SIS mixer with NbN/AlN/NbN tunnel junctions and an NbN/MgO/NbTiN tuning circuit on an MgO substrate was demonstrated at frequencies above the gap frequency of Nb. To design the mixer, the complex refractive index of the MgO substrate was measured by using a THz time-domain spectrometer. The superconductive properties of NbTiN films on MgO were examined in detail. An uncorrected receiver noise temperature of 262 K (DSB) at 820 GHz was achieved in an IF bandwidth of 4-12 GHz at a bath temperature of 4.2 K. By comparing the measured and calculated conversion gains, the loss in the NbN/MgO/NbTiN tuning circuit was estimated to be 0.98 dB at 810 GHz.
We report on the mixing properties of waveguide SIS mixers with epitaxial NbN/AlN/NbN junctions and NbN/SiO2/NbTiN microstrips on MgO substrates. The superconducting transition temperature and 20-K resistivity of NbTiN film on the SiO2dielectric were 14.7 K and 175 muOmega cm, respectively. The junction tuning circuit was composed of an NbN/SiO2/NbTiN microstrip and two parallel-connected NbN/AlN/NbN junctions 0.9 mum in diameter. The critical current density and normal-state resistance of the fabricated NbN junction were 13 kA/cm2and 22 Omega, respectively. The heterodyne response was measured using 295- and 77-K blackbody sources, a local oscillator (LO) source, and a 25-mum-thick Kapton film as a beam splitter. An intermediate frequency (IF) amplifier with a bandwidth of 4-12 GHz was used in the measurements. The receiver noise temperature corrected for losses in the beam splitter and in the vacuum window of the cryocooler was 370 K at 860 GHz and was comparable to that of all-NbN mixes with NbN/MgO/NbN microstrips.