Incorporating a micrometer scale strip as the sensitive element in superconducting single-photon detectors can lead to significant improvements in their speed, footprint, and fabrication yield. However, the current application of microstrips has resulted in a decline in the detectors' intrinsic detection efficiency. We address this issue through the utilization of niobium nitride films with high values of resistance per square. Notably, the films used in our study possess an important characteristic of retaining high critical temperature values, which enables the devices to operate in conventional closed-cycle cryostats.
Incorporating a micrometer scale strip as the sensitive element in superconducting single-photon detectors can lead to significant improvements in their speed, footprint, and fabrication yield. However, the current application of microstrips has resulted in a decline in the detectors' intrinsic detection efficiency. We address this issue through the utilization of niobium nitride films with high values of resistance per square. Notably, the films used in our study possess an important characteristic of retaining high critical temperature values, which enables the devices to operate in conventional closed-cycle cryostats.
The sensitive element of superconducting single-photon detectors made in the form of a microstrip promise to resolve significant limitations caused by their typical design. However, attention should be paid to the problem of deterioration of the detection efficiency of devices with an increase of the width of the superconducting strip from nano- to microscale. This article demonstrates a possibility of achieving highly saturated detection efficiency of superconducting microstrip single-photon detectors by using high-resistivity niobium nitride films. The approach opens the way for employing fundamentally improved experimental devices.
Generally, a superconducting nanowire single-photon detector (SNSPD) is composed of wires with a typical width of ∼ 100 nm . Recent studies have found that superconducting strips with a micrometer-scale width can also detect single photons. Compared with the SNSPD covering the same area, the superconducting microstrip single-photon detector (SMSPD) has smaller kinetic inductance, higher working current, and lower requirements in fabrication accuracy, providing potential applications in the development of ultralarge active area detectors. However, the study of SMSPD is still in its infancy, and the realization of its high-performance and practical use remains an open question. This study demonstrates a NbN SMSPD with a nearly saturated system detection efficiency (SDE) of ∼ 92.2 % at a dark count rate of ∼ 200 cps , a polarization sensitivity of ∼ 1.03 , and a minimum timing jitter of ∼ 48 ps at the telecom wavelength of 1550 nm when coupled with a single-mode fiber and operated at 0.84 K. Furthermore, the detector’s SDE is over 70% when operated at a 2.1 K closed-cycle cryocooler.
At the present time, ultrahigh performance superconducting nanowire single-photon detectors are the key elements in a variety of devices from biological research to quantum communications and computing. Accurate tuning of superconducting material properties is a powerful resource for fabricating single-photon detectors with desired properties. Here, we report on the major theoretical relations between ultrathin niobium nitride (NbN) film properties and superconducting nanowire single-photon detector characteristics, as well as the dependence of ultrathin NbN film properties on reactive magnetron sputtering recipes. Based on this study, we formulate the exact requirements for ultrathin NbN films for ultrahigh performance superconducting nanowire single-photon detectors. Then, we experimentally studied the properties of ultrathin NbN films (morphology, crystalline structure, critical temperature, and sheet resistance) on silicon, sapphire, silicon dioxide, and silicon nitride substrates sputtered with various recipes. We demonstrate ultrathin NbN films (obtained with more than 100 films deposition) with a wide range of critical temperature from 2.5 to 12.1 K and sheet resistance from 285 to 2000 Ω/sq and report a sheet resistance evolution of more than 40% within two years. Finally, we found out that one should use ultrathin NbN films with a specific critical temperature near 9.5 K and a sheet resistance of about 350 Ω/sq for ultrahigh performance state-of-the-art superconducting nanowire single-photon detectors at 1550 nm wavelength.
Superconducting microstrips single-photon detectors (SMSPDs) are a novel type of single-photon sensor based on superconducting thin films patterned into micrometer-scale strip widths. Compared with superconducting nanowire single-photon detectors (SNSPDs), SMSPDs not only substantially lower the fabrication dependence on high-precision electron-beam lithography, but also exhibit lower kinetic inductance, higher bias current, and weaker polarization sensitivity. These advantages pave a new route toward superconducting single-photon detection systems with large active areas and low dark-count rates. Because of their performance, SMSPDs exhibit tremendous application potential in cutting-edge fields such as quantum communication, LiDAR, dark-matter searches, and high-energy particle detection. Accordingly, this paper provides a systematic review of recent advances in SMSPD research, covering the underlying physical mechanisms, material systems, geometrical design, readout circuitry, and application domains. Firstly, this review elaborates on the photon response mechanism of SMSPDs and clarifies its correlation with vortex dynamics. Secondly, this review categorizes the superconducting materials used for SMSPD fabrication and analyzes the influences of characteristic thin-film parameters on device performance. Furthermore, this work concludes the evolution and optimization strategies of geometrical design and readout circuit schemes for SMSPDs, and presents the current application status. Finally, we offer perspectives on its future development trajectory. This review provides a foundation in physical mechanisms and design guidance for the development of large active area SMSPDs with high efficiency and low dark counts.
The intrinsic detection performance of superconducting nanowire single photon detectors (SNSPDs) is highly dependent on the superconducting properties of underlying thin films. This report outlines the enhancement of detection performance for single telecom wavelength photons in disordered NbTiN SNSPD at 4.2 K. By increasing the nitrogen content and deposition pressure, the NbTiN films show suppression in critical temperature and an increase in sheet resistance. Notably, the resulting SNSPDs display a broader saturation plateau at 2.2 K, leading to superior detection performance at 4.2 K. With the disordered 7-nm-thick NbTiN films, we fabricated SNSPDs with system detection efficiency up to 83% for 1550 nm photons at 4.2 K. Moreover, these devices also show saturated intrinsic detection efficiency for 2000 nm photons. With the features outlined, the devices can be integrated into the idle 4.2 K stage of the dilution refrigerator for applications in optical quantum information processing or utilize for detecting laser radar signals in airborne platforms.
Superconducting nanowire single photon detectors (SNSPDs) promise to combine near-unity quantum efficiency with >100 megacounts per second rates, picosecond timing jitter, and sensitivity ranging from x-ray to mid-infrared wavelengths. However, this promise is not yet fulfilled, as superior performance in all metrics is yet to be combined into one device. The highest single-pixel detection efficiency and the widest bias windows for saturated quantum efficiency have been achieved in SNSPDs based on amorphous materials, while the lowest timing jitter and highest counting rates were demonstrated in devices made from polycrystalline materials. Broadly speaking, the amorphous superconductors that have been used to make SNSPDs have higher resistivities and lower critical temperature (Tc) values than typical polycrystalline materials. Here, we demonstrate a method of preparing niobium nitride (NbN) that has lower-than-typical superconducting transition temperature and higher-than-typical resistivity. As we will show, NbN deposited onto unheated SiO2 has a low Tc and high resistivity but is too rough for fabricating unconstricted nanowires, and Tc is too low to yield SNSPDs that can operate well at liquid helium temperatures. By adding a 50 W RF bias to the substrate holder during sputtering, the Tc of the unheated NbN films was increased by up to 73%, and the roughness was substantially reduced. After optimizing the deposition for nitrogen flow rates, we obtained 5 nm thick NbN films with a Tc of 7.8 K and a resistivity of 253 μΩ cm. We used this bias sputtered room temperature NbN to fabricate SNSPDs. Measurements were performed at 2.5 K using 1550 nm light. Photon count rates appeared to saturate at bias currents approaching the critical current, indicating that the device's quantum efficiency was approaching unity. We measured a single-ended timing jitter of 38 ps. The optical coupling to these devices was not optimized; however, integration with front-side optical structures to improve absorption should be straightforward. This material preparation was further used to fabricate nanocryotrons and a large-area imager device, reported elsewhere. The simplicity of the preparation and promising device performance should enable future high-performance devices.