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Sensors

Research Progress of Superconducting Microstrips Single-Photon Detectors

Fei Li, Jinji Zheng, 邓志威

Published Oct 27, 2026• 0 citations
Publisher

Abstract

Superconducting microstrips single-photon detectors (SMSPDs) are a novel type of single-photon sensor based on superconducting thin films patterned into micrometer-scale strip widths. Compared with superconducting nanowire single-photon detectors (SNSPDs), SMSPDs not only substantially lower the fabrication dependence on high-precision electron-beam lithography, but also exhibit lower kinetic inductance, higher bias current, and weaker polarization sensitivity. These advantages pave a new route toward superconducting single-photon detection systems with large active areas and low dark-count rates. Because of their performance, SMSPDs exhibit tremendous application potential in cutting-edge fields such as quantum communication, LiDAR, dark-matter searches, and high-energy particle detection. Accordingly, this paper provides a systematic review of recent advances in SMSPD research, covering the underlying physical mechanisms, material systems, geometrical design, readout circuitry, and application domains. Firstly, this review elaborates on the photon response mechanism of SMSPDs and clarifies its correlation with vortex dynamics. Secondly, this review categorizes the superconducting materials used for SMSPD fabrication and analyzes the influences of characteristic thin-film parameters on device performance. Furthermore, this work concludes the evolution and optimization strategies of geometrical design and readout circuit schemes for SMSPDs, and presents the current application status. Finally, we offer perspectives on its future development trajectory. This review provides a foundation in physical mechanisms and design guidance for the development of large active area SMSPDs with high efficiency and low dark counts.

DOI
10.3390/s26216791

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Superconducting microstrips single-photon detectors (SMSPDs) are a novel type of single-photon sensor based on superconducting thin films patterned into micrometer-scale strip widths. Compared with superconducting nanowire single-photon detectors (SNSPDs), SMSPDs not only substantially lower the fabrication dependence on high-precision electron-beam lithography, but also exhibit lower kinetic inductance, higher bias current, and weaker polarization sensitivity. These advantages pave a new route toward superconducting single-photon detection systems with large active areas and low dark-count rates. Because of their performance, SMSPDs exhibit tremendous application potential in cutting-edge fields such as quantum communication, LiDAR, dark-matter searches, and high-energy particle detection. Accordingly, this paper provides a systematic review of recent advances in SMSPD research, covering the underlying physical mechanisms, material systems, geometrical design, readout circuitry, and application domains. Firstly, this review elaborates on the photon response mechanism of SMSPDs and clarifies its correlation with vortex dynamics. Secondly, this review categorizes the superconducting materials used for SMSPD fabrication and analyzes the influences of characteristic thin-film parameters on device performance. Furthermore, this work concludes the evolution and optimization strategies of geometrical design and readout circuit schemes for SMSPDs, and presents the current application status. Finally, we offer perspectives on its future development trajectory. This review provides a foundation in physical mechanisms and design guidance for the development of large active area SMSPDs with high efficiency and low dark counts.
Generally, a superconducting nanowire single-photon detector (SNSPD) is composed of wires with a typical width of ∼ 100 nm . Recent studies have found that superconducting strips with a micrometer-scale width can also detect single photons. Compared with the SNSPD covering the same area, the superconducting microstrip single-photon detector (SMSPD) has smaller kinetic inductance, higher working current, and lower requirements in fabrication accuracy, providing potential applications in the development of ultralarge active area detectors. However, the study of SMSPD is still in its infancy, and the realization of its high-performance and practical use remains an open question. This study demonstrates a NbN SMSPD with a nearly saturated system detection efficiency (SDE) of ∼ 92.2 % at a dark count rate of ∼ 200 cps , a polarization sensitivity of ∼ 1.03 , and a minimum timing jitter of ∼ 48 ps at the telecom wavelength of 1550 nm when coupled with a single-mode fiber and operated at 0.84 K. Furthermore, the detector’s SDE is over 70% when operated at a 2.1 K closed-cycle cryocooler.
Abstract Superconducting microstrip single photon detectors (SMSPDs) received great interest since they are expected to combine the excellent performance of superconducting nanostrip single photon detectors with the possibility to cover large active areas using low-cost fabrication techniques. In this work, we fabricated SMSPDs based on NbRe to investigate the role of vortices in the dark counts events in this innovative material and in devices with micrometer size. We realized devices with different layouts, namely single microstrips and pairs of parallel microstrips. The energy barriers related to the motion of single vortices or vortex–antivortex pairs, responsible of detection events, have been determined and compared with the ones of similar devices based on different materials, such as MoSi, WSi and NbN. The analysis confirms the high potential of NbRe for the realization of superconducting single photon detectors with large areas.
Superconducting microstrip single-photon detectors (SMSPDs) with near-infrared sensitivity have significant advantages in terms of high quantum efficiency and low dark counts in a large active area. Hole-patterned superconductor microstrips have been reported for fast and efficient single-photon detection. In this work, we fabricated and characterized hole-patterned microstrips with different hole diameters on 5 nm thick MoSi films and an area of 500 × 500 μm2. We observed that the count rate curves of detectors 2 and 3 with holes tend to saturate slightly, whereas those of detector 1 without holes do not. Furthermore, the dark count is similar between detector 1 without holes and detector 2 with small holes and much lower than that of detector 3 with large holes. These experiments indicate that a proper hole is beneficial for efficiency without increasing the dark count rate.
The effective and convenient detection of single photons via advanced detectors with a large active area is becoming significant for quantum and classical applications. This work demonstrates the fabrication of a superconducting microstrip single-photon detector (SMSPD) with a millimeter-scale active area via the use of ultraviolet (UV) photolithography. The performances of NbN SMSPDs with different active areas and strip widths are characterized. SMSPDs fabricated by UV photolithography and electron beam lithography with small active areas are also compared from the aspects of the switching current density and line edge roughness. Furthermore, an SMSPD with an active area of 1 mm × 1 mm is obtained via UV photolithography, and during operation at 0.85 K, it exhibits near-saturated internal detection efficiency at wavelengths up to 800 nm. At a wavelength of 1550 nm, the detector exhibits a system detection efficiency of ∼5% (7%) and a timing jitter of 102 (144) ps, when illuminated with a light spot of ∼18 (600) µm in diameter, respectively.
Superconducting nanowire single photon detectors (SNSPDs) are the highest-performing technology for time-resolved single-photon counting from the UV to the near-infrared. The recent discovery of single-photon sensitivity in micrometer-scale superconducting wires is a promising pathway to explore for large active area devices with application to dark matter searches and fundamental physics experiments. We present 8-pixel 1 mm2 superconducting microwire single photon detectors (SMSPDs) with 1 μm-wide wires fabricated from WSi and MoSi films of various stoichiometries using electron-beam and optical lithography. Devices made from all materials and fabrication techniques show saturated internal detection efficiency at 1064 nm in at least one pixel, and the best performing device made from silicon-rich WSi shows single-photon sensitivity in all eight pixels and saturated internal detection efficiency in 6/8 pixels. This detector is the largest reported active-area SMSPD or SNSPD with near-IR sensitivity, and it extends the SMSPD to an array format. By further optimizing the photolithography techniques presented in this work, a viable pathway exists to realize larger devices with cm2-scale active area and beyond.
Superconducting Nanowire Single Photon Detectors (SNSPDs) excel at a wide variety of performance criteria for single photon counting. They combine unprecedented high detection efficiency, high timing resolution, high count rates, low intrinsic dark count rates, and are sensitive to ultraviolet through mid-infrared single-photons. At JPL, we are working on several projects to push the performance limits of SNSPDs to achieve higher maximum count rates, larger active areas, higher timing resolution, and a wider spectral range. Our recent advances enable new applications for dark matter detection, imaging, and space-to-ground communication and provide insight into the fundamental physics of single-photon detection in superconducting nanowires.