Large active-area superconducting microwire detector array with single-photon sensitivity in the near-infrared
Jamie Luskin, Ekkehart Schmidt, Boris A. Korzh, Andrew D. Beyer, Bruce Bumble, Jason P. Allmaras, Alexander B. Walter, Emma E. Wollman, Lautaro Narváez, Varun Boehm Verma, Sae Woo Nam, Ilya Charaev, Marco Colangelo, Karl K. Berggren, Cristián Peña, M. Spiropulu, M. Garcia-Sciveres, Stephen E. Derenzo, Matthew D. Shaw
Superconducting nanowire single photon detectors (SNSPDs) are the highest-performing technology for time-resolved single-photon counting from the UV to the near-infrared. The recent discovery of single-photon sensitivity in micrometer-scale superconducting wires is a promising pathway to explore for large active area devices with application to dark matter searches and fundamental physics experiments. We present 8-pixel 1 mm2 superconducting microwire single photon detectors (SMSPDs) with 1 μm-wide wires fabricated from WSi and MoSi films of various stoichiometries using electron-beam and optical lithography. Devices made from all materials and fabrication techniques show saturated internal detection efficiency at 1064 nm in at least one pixel, and the best performing device made from silicon-rich WSi shows single-photon sensitivity in all eight pixels and saturated internal detection efficiency in 6/8 pixels. This detector is the largest reported active-area SMSPD or SNSPD with near-IR sensitivity, and it extends the SMSPD to an array format. By further optimizing the photolithography techniques presented in this work, a viable pathway exists to realize larger devices with cm2-scale active area and beyond.
Superconducting nanowire single photon detectors (SNSPDs) are the highest-performing technology for time-resolved single-photon counting from the UV to the near-infrared. The recent discovery of single-photon sensitivity in micrometer-scale superconducting wires is a promising pathway to explore for large active area devices with application to dark matter searches and fundamental physics experiments. We present 8-pixel 1 mm2 superconducting microwire single photon detectors (SMSPDs) with 1 μm-wide wires fabricated from WSi and MoSi films of various stoichiometries using electron-beam and optical lithography. Devices made from all materials and fabrication techniques show saturated internal detection efficiency at 1064 nm in at least one pixel, and the best performing device made from silicon-rich WSi shows single-photon sensitivity in all eight pixels and saturated internal detection efficiency in 6/8 pixels. This detector is the largest reported active-area SMSPD or SNSPD with near-IR sensitivity, and it extends the SMSPD to an array format. By further optimizing the photolithography techniques presented in this work, a viable pathway exists to realize larger devices with cm2-scale active area and beyond.
Superconducting Nanowire Single-Photon Detectors (SNSPDs) are the premier single-photon counting technology in the near-infrared regime. Operating via a photon-induced phase transition from the superconducting to the normal state, SNSPDs act as highly sensitive digital detectors that now play a critical role in quantum communication, deep-space optical communications, and direct dark matter detection. As the demand for these detectors scales, there is a pressing need to extend their performance capabilities toward longer wavelengths, larger active areas, and higher operating temperatures. However, advancing these metrics requires navigating complex physical trade-offs inherent to the detection mechanism. This thesis explores the material optimizations, novel detector architectures, and fundamental device physics required to push SNSPD technology beyond its current limits. The first thrust of this work focuses on extending SNSPD sensitivity into the mid-infrared (MIR) and far-infrared regimes. By developing a low-Tc (sub-1 K) WSi film engineered to reduce the characteristic detection energy, the threshold for long-wavelength detection is significantly lowered. Coupled with a novel detector architecture utilizing impedance-matching tapers and superconducting nanowire avalanche photon detectors (SNAPs), sensitivity is initially demonstrated at wavelengths up to 29um using a blackbody thermal source. Expanding beyond this limit, the implementation of quantum cascade lasers enables the demonstration of single-photon counting at wavelengths up to 88um, marking a major improvement over the current state of the art. To address the practical MIR detection challenges of low signal-to-noise ratio and restricted fill factors, this work also demonstrates a 1 mm x 1mm array of superconducting microwire single-photon detectors (SMSPDs) sensitive out to 3.7um, establishing a pathway for future antenna-coupled detectors. The second thrust investigates the development of micrometer-scale wires to simultaneously increase active area and operating temperature. Moving to microwire geometries raises fundamental questions regarding intrinsic detection mechanisms. Using a scanning lens setup, this work demonstrates the first direct observation of transverse coordinate effects in microwires, where the precise location of photon incidence across the wire width significantly alters the detector's slew rate and timing performance. To counteract this, new rectification schemes are introduced to produce a more uniform detection landscape. Specifically, the integration of a superconducting rail alongside the main detector is shown to successfully mitigate the transverse coordinate effect, improve timing performance, and increase the viable operating temperature of the detector. The third thrust explores the use of unconventional superconductors, namely MgB2 to achieve an appreciably higher-temperature single-photon detection pathway. This section details the distinct challenges associated with the growth and fabrication of detectors using air-sensitive materials and evaluates their long-term viability for the SNSPD platform. Ultimately, this thesis highlights the critical material and architectural parameters required to advance the field of single-photon detection. By elucidating the metrics and mechanisms that govern ideal detector performance, this work aims to broaden the understanding and future application of SNSPDs across diverse scientific disciplines. All the data presented here is my own unless otherwise mentioned.
To measure light down to the single photon level, superconducting nanowire single photon detectors (SNSPDs) have become the go-to devices, due to their near unity detection efficiency [1] , high-speed and low noise. An important figure of merit is the internal detection efficiency (IDE). To achieve a saturated IDE in the infrared, wire widths of the order 100 nm are typically required. Nevertheless, recent experiments have shown that functional detectors can be fabricated with wire widths up to 3 µm [2] – [4] . A higher silicon content of the films combined with a smaller film thickness enables wider wires. Increasing the wire width allows for bigger fabrication tolerances which enables the fabrication with optical lithography.
We report on the fabrication and characterization of single-photon-sensitive WSi superconducting detectors with wire widths from 1 μm to 3 μm. The devices achieve the saturated internal detection efficiency at a wavelength of 1.55 μm and exhibit maximum count rates in excess of 105 s−1. We also investigate the material properties of the silicon-rich WSi films used for these devices. We find that many devices with active lengths of several hundred micrometers exhibit critical currents in excess of 50% of the depairing current. A meandered detector with a 2.0 μm wire width is demonstrated over a surface area of 362 × 362 μm2, showcasing the material and device quality achieved.
Generally, a superconducting nanowire single-photon detector (SNSPD) is composed of wires with a typical width of ∼ 100 nm . Recent studies have found that superconducting strips with a micrometer-scale width can also detect single photons. Compared with the SNSPD covering the same area, the superconducting microstrip single-photon detector (SMSPD) has smaller kinetic inductance, higher working current, and lower requirements in fabrication accuracy, providing potential applications in the development of ultralarge active area detectors. However, the study of SMSPD is still in its infancy, and the realization of its high-performance and practical use remains an open question. This study demonstrates a NbN SMSPD with a nearly saturated system detection efficiency (SDE) of ∼ 92.2 % at a dark count rate of ∼ 200 cps , a polarization sensitivity of ∼ 1.03 , and a minimum timing jitter of ∼ 48 ps at the telecom wavelength of 1550 nm when coupled with a single-mode fiber and operated at 0.84 K. Furthermore, the detector’s SDE is over 70% when operated at a 2.1 K closed-cycle cryocooler.
Superconducting nanowire single-photon detectors (SNSPDs) are the leading technology for low noise, high efficiency infrared single-photon detection. The basic SNSPD consists of a nanowire patterned in an ultrathin superconducting thin film, which is cooled below its critical temperature and biased close to its critical current. The absorption of a single-photon creates a resistive region, triggering a fast output voltage pulse which can be readily amplified and registered. The excellent performance of SNSPDs at near-infrared and telecommunications wavelengths has led to their adoption in important applications such as quantum secure communications, single-photon spectroscopy and single-photon LIDAR. A clear challenge for the SNSPD community is to extend the spectral range of SNSPDs into the mid infrared, and to improve material uniformity to enable the realization of large area arrays for multimode or free space coupling. The aim of this work is to evaluate potential materials for next generation mid-infrared SNSPD arrays. In this work, thin films of polycrystalline NbN and amorphous MoSi have been optimized to test the uniformity of a multipixel array configuration composed of 8 nanowire meander structures covering 10 um x 10 um area, 100 nm width and 50% filling factor. The 8-pixels SNSPD arrays have been patterned on 8 nm thickness NbN grown on high resistivity silicon (HR Si) substrate at room temperature and at 800 °C exhibiting respectively 4.4 K and 7.3 K as mean critical temperature across the pixels. The 8- pixels SNSPD array patterned on 8 nm thickness MoSi cooling the HR Si substrate to -180 °C has exhibited a mean critical temperature of 3.2 K across the pixels. Optical properties have been measured by an attenuated 1550 nm laser diode source delivered by single mode optical fibre at a controlled distance from the chip in order to broadly illuminate the array. The optical properties have been studied only for the 8 nm thickness NbN SNSPD array grown at room temperature has demonstrated uniform optical properties across pixels exhibiting similar saturation of the internal efficiency over a large bias, similar dark count rate and similar timing jitter (about 137 ps) across pixels. In the single photon regime at 1550 nm, pixels 4 and 6 of the 8 nm thickness NbN SNSPD array exhibit 28.4% and 4.7% pixel detection efficiency as measured at the bias current 95% of their respective critical current at 2.2 K.
Single-pixel fiber-coupled superconducting nanowire single-photon detectors (SNSPDs) operating at 1550 nm and utilizing amorphous superconducting tungsten silicide (WSi) films have proven ability to detect photons with: high system-detection efficiency (SDE) of up to 93%, low-jitter on the order of ∼150 ps, dark count rates of ∼1 kcps, and fast reset times on the order of tens of nanoseconds. Additionally, WSi SNSPD devices with 12-pixels have recently demonstrated downlink data rates of 79 Mbps between a terminal in orbit around the moon and a terminal on earth, as part of the Lunar Laser Communication Demonstration (LLCD) at the Lunar Lasercomm OCTL Terminal (LLOT). To further extend the performance of SNSPD devices for optical and quantum communication for terrestrial and space-based applications, the next generation of devices will need to incorporate hundreds to thousands of SNSPD pixels and to be free-space coupled. The wire widths necessary for optimal performance of WSi (∼120–220 nm) devices have to date been achieved using electron-beam lithography (EBL) to pattern photoresists for etch-back fabrication methods. The high cost and time to fabricate kilo-pixel arrays of SNSPDs using EBL will become prohibitive in producing such devices. Here, we report fabrication of a WSi SNSPD test structure with 64 pixels using optical lithography instead of EBL. Specifically, we used Canon EX3 and EX6 deep-UV (DUV) steppers with KrF excimer lasers$(\lambda=248\ \mbox{nm} ) intheMicroDevicesLaboratoryattheJetPropulsionLaboratorytofabricatethearray.Dieswith8×8pixelswith166−nm−widewireswereproduced,withpixelshavinga100\mu\mbox{m} $pitch in the vertical and horizontal directions. Two improvements were observed: 1) the time to pattern the 8 × 8 SNSPD pixels on 3.5 mm × 3.5 mm dies filling a 4-in Si wafer required ∼24 hours using EBL while optical lithography wrote the same dies in approximately 15 minutes; and 2) the cost to write one 4-in wafer using EBL was comparable to the cost for one optical mask for use in the stepper to write many 4-in wafers. While fabrication times and costs will vary from facility to facility, the improvements in speed and cost for optical lithography versus EBL are apparent, and this technological advance should scale and enable fast and rapid production of kilo-pixel arrays in the future.