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arXiv:2002.12858 · Applied Physics Letters

Superconducting microwire detectors based on WSi with single-photon sensitivity in the near-infrared

Jeff Chiles, Sonia Mary Buckley, Adriana E. Lita, Varun Verma, Jason P. Allmaras, Boris A. Korzh, Matthew D. Shaw, Jeffrey M. Shainline, Richard P. Mirin, S. W. Nam

Published Jun 15, 2020• 72 citations
arXivHTMLPDF

Abstract

We report on the fabrication and characterization of single-photon-sensitive WSi superconducting detectors with wire widths from 1 μm to 3 μm. The devices achieve the saturated internal detection efficiency at a wavelength of 1.55 μm and exhibit maximum count rates in excess of 105 s−1. We also investigate the material properties of the silicon-rich WSi films used for these devices. We find that many devices with active lengths of several hundred micrometers exhibit critical currents in excess of 50% of the depairing current. A meandered detector with a 2.0 μm wire width is demonstrated over a surface area of 362 × 362 μm2, showcasing the material and device quality achieved.

DOI
10.1063/5.0006221

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•Aug 4, 2026•0 citations
We report on the fabrication and characterization of single-photon-sensitive WSi superconducting detectors with wire widths from 1 μm to 3 μm. The devices achieve the saturated internal detection efficiency at a wavelength of 1.55 μm and exhibit maximum count rates in excess of 105 s−1. We also investigate the material properties of the silicon-rich WSi films used for these devices. We find that many devices with active lengths of several hundred micrometers exhibit critical currents in excess of 50% of the depairing current. A meandered detector with a 2.0 μm wire width is demonstrated over a surface area of 362 × 362 μm2, showcasing the material and device quality achieved.
To measure light down to the single photon level, superconducting nanowire single photon detectors (SNSPDs) have become the go-to devices, due to their near unity detection efficiency [1] , high-speed and low noise. An important figure of merit is the internal detection efficiency (IDE). To achieve a saturated IDE in the infrared, wire widths of the order 100 nm are typically required. Nevertheless, recent experiments have shown that functional detectors can be fabricated with wire widths up to 3 µm [2] – [4] . A higher silicon content of the films combined with a smaller film thickness enables wider wires. Increasing the wire width allows for bigger fabrication tolerances which enables the fabrication with optical lithography.
Superconducting nanowire single photon detectors (SNSPDs) are the highest-performing technology for time-resolved single-photon counting from the UV to the near-infrared. The recent discovery of single-photon sensitivity in micrometer-scale superconducting wires is a promising pathway to explore for large active area devices with application to dark matter searches and fundamental physics experiments. We present 8-pixel 1 mm2 superconducting microwire single photon detectors (SMSPDs) with 1 μm-wide wires fabricated from WSi and MoSi films of various stoichiometries using electron-beam and optical lithography. Devices made from all materials and fabrication techniques show saturated internal detection efficiency at 1064 nm in at least one pixel, and the best performing device made from silicon-rich WSi shows single-photon sensitivity in all eight pixels and saturated internal detection efficiency in 6/8 pixels. This detector is the largest reported active-area SMSPD or SNSPD with near-IR sensitivity, and it extends the SMSPD to an array format. By further optimizing the photolithography techniques presented in this work, a viable pathway exists to realize larger devices with cm2-scale active area and beyond.
Abstract We demonstrate the fabrication of micron-wide tungsten silicide superconducting nanowire single-photon detectors on a silicon substrate using laser lithography. We show saturated internal detection efficiencies with wire widths ranging from 0.59 µm to 1.43 µm under illumination at 1550 nm. We demonstrate both straight wires, as well as meandered structures. Single-photon sensitivity is shown in devices up to 4 mm in length. Laser-lithographically written devices allow for fast and easy structuring of large areas while maintaining a saturated internal efficiency for wire widths around 1 µm.
We demonstrate saturated internal detection efficiency at 1550 nm wavelengths for meander-shaped superconducting nanowire single-photon detectors made of 3 nm thick MoSi films with widths of 1 and 3 μm and active areas up to 400 × 400 μm2. Despite hairpin turns and a large number of squares (up to 104) in the device, the dark count rate was measured to be ∼103 cps at 99% of the switching current. This value is about two orders of magnitude lower than the results reported recently for short MoSi devices with shunt resistors. We also found that 5 nm thick MoSi detectors with the same geometry were insensitive to single near-infrared photons, which may be associated with different levels of suppression of the superconducting order parameter. However, our results obtained on 3 nm thick MoSi devices are in good agreement with predictions in the frame of a kinetic-equation approach.
Superconducting Nanowire Single-Photon Detectors (SNSPDs) are the premier single-photon counting technology in the near-infrared regime. Operating via a photon-induced phase transition from the superconducting to the normal state, SNSPDs act as highly sensitive digital detectors that now play a critical role in quantum communication, deep-space optical communications, and direct dark matter detection. As the demand for these detectors scales, there is a pressing need to extend their performance capabilities toward longer wavelengths, larger active areas, and higher operating temperatures. However, advancing these metrics requires navigating complex physical trade-offs inherent to the detection mechanism. This thesis explores the material optimizations, novel detector architectures, and fundamental device physics required to push SNSPD technology beyond its current limits. The first thrust of this work focuses on extending SNSPD sensitivity into the mid-infrared (MIR) and far-infrared regimes. By developing a low-Tc (sub-1 K) WSi film engineered to reduce the characteristic detection energy, the threshold for long-wavelength detection is significantly lowered. Coupled with a novel detector architecture utilizing impedance-matching tapers and superconducting nanowire avalanche photon detectors (SNAPs), sensitivity is initially demonstrated at wavelengths up to 29um using a blackbody thermal source. Expanding beyond this limit, the implementation of quantum cascade lasers enables the demonstration of single-photon counting at wavelengths up to 88um, marking a major improvement over the current state of the art. To address the practical MIR detection challenges of low signal-to-noise ratio and restricted fill factors, this work also demonstrates a 1 mm x 1mm array of superconducting microwire single-photon detectors (SMSPDs) sensitive out to 3.7um, establishing a pathway for future antenna-coupled detectors. The second thrust investigates the development of micrometer-scale wires to simultaneously increase active area and operating temperature. Moving to microwire geometries raises fundamental questions regarding intrinsic detection mechanisms. Using a scanning lens setup, this work demonstrates the first direct observation of transverse coordinate effects in microwires, where the precise location of photon incidence across the wire width significantly alters the detector's slew rate and timing performance. To counteract this, new rectification schemes are introduced to produce a more uniform detection landscape. Specifically, the integration of a superconducting rail alongside the main detector is shown to successfully mitigate the transverse coordinate effect, improve timing performance, and increase the viable operating temperature of the detector. The third thrust explores the use of unconventional superconductors, namely MgB2 to achieve an appreciably higher-temperature single-photon detection pathway. This section details the distinct challenges associated with the growth and fabrication of detectors using air-sensitive materials and evaluates their long-term viability for the SNSPD platform. Ultimately, this thesis highlights the critical material and architectural parameters required to advance the field of single-photon detection. By elucidating the metrics and mechanisms that govern ideal detector performance, this work aims to broaden the understanding and future application of SNSPDs across diverse scientific disciplines. All the data presented here is my own unless otherwise mentioned.