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Applied Physics Letters

Disorder enhanced relative intrinsic detection efficiency in NbTiN superconducting nanowire single photon detectors at high temperature

Ruoyan Ma, Qingchang Huan, Jia Huang, Xingyu Zhang, You Xiao, Hongxin Xu, Hailong Han, Xiaoyu Liu, Wei Peng, Hui Li, Xiaofu Zhang, Lixing You

Published Feb 12, 2024• 13 citations
Publisher

Abstract

The intrinsic detection performance of superconducting nanowire single photon detectors (SNSPDs) is highly dependent on the superconducting properties of underlying thin films. This report outlines the enhancement of detection performance for single telecom wavelength photons in disordered NbTiN SNSPD at 4.2 K. By increasing the nitrogen content and deposition pressure, the NbTiN films show suppression in critical temperature and an increase in sheet resistance. Notably, the resulting SNSPDs display a broader saturation plateau at 2.2 K, leading to superior detection performance at 4.2 K. With the disordered 7-nm-thick NbTiN films, we fabricated SNSPDs with system detection efficiency up to 83% for 1550 nm photons at 4.2 K. Moreover, these devices also show saturated intrinsic detection efficiency for 2000 nm photons. With the features outlined, the devices can be integrated into the idle 4.2 K stage of the dilution refrigerator for applications in optical quantum information processing or utilize for detecting laser radar signals in airborne platforms.

DOI
10.1063/5.0190139

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Applied Physics Letters•Sep 18, 2017•64 citations
The intrinsic detection performance of superconducting nanowire single photon detectors (SNSPDs) is highly dependent on the superconducting properties of underlying thin films. This report outlines the enhancement of detection performance for single telecom wavelength photons in disordered NbTiN SNSPD at 4.2 K. By increasing the nitrogen content and deposition pressure, the NbTiN films show suppression in critical temperature and an increase in sheet resistance. Notably, the resulting SNSPDs display a broader saturation plateau at 2.2 K, leading to superior detection performance at 4.2 K. With the disordered 7-nm-thick NbTiN films, we fabricated SNSPDs with system detection efficiency up to 83% for 1550 nm photons at 4.2 K. Moreover, these devices also show saturated intrinsic detection efficiency for 2000 nm photons. With the features outlined, the devices can be integrated into the idle 4.2 K stage of the dilution refrigerator for applications in optical quantum information processing or utilize for detecting laser radar signals in airborne platforms.
Abstract We experimentally investigated the detection performance of highly disordered Nb x Ti 1 − x N based superconducting nanowire single photon detectors (SNSPDs). The dependence on the composition of the transition temperature T c for Nb x Ti 1 − x N films show a dome-like behavior on the Nb content, with a maximal T c at x Nb ∼ 0.65 , and the Nb 0.65 Ti 0.35 N films also combine relatively large sheet resistance and intermediate residual resistivity ratio. Moreover, 60-nm-wide and 7-nm-thick Nb 0.65 Ti 0.35 N nanowires show a switching current as high as 14.5 μ A, and saturated intrinsic detection efficiency with a plateau of more than 2 μ A at 2.4 K. Finally, the corresponding SNSPDs on an alternative SiO 2 /Ta 2 O 5 dielectric mirror showed a system detection efficiency of approximately 92% for 1550 nm photons, and the timing jitter is around 26 ps. Our results demonstrate that the highly disordered Nb x Ti 1 − x N
Niobium Titanium nitride (NbTiN) based superconducting nanowire single photon detectors (SNSPDs) are known for their high performance across a wide spectral range, from the X-ray to the mid-infrared. Nonetheless, fabrication challenges and performance degradation attributable to surface oxidation and lack of uniformity in films thinner than 5 nm remain a significant barrier for achieving high-quality detectors. In this work, we study the influence of a Silicon capping layer on film properties and on the performance of SNSPDs. A Silicon capping layer effectively suppresses oxidation and increases the superconducting transition temperature. This enables superconductivity in films as thin as 3 nm at 3 K, increases critical current in patterned nanowires and significantly extends the saturation plateau from the visible to the near infrared (up to 2050 nm): These detectors maintain sub-50 ps timing jitter, even for nanowires as wide as 250 nm and with detection areas of 20x20μm2. Our results establish that thinner films protected by a capping layer allow for the fabrication of wider wires, decreasing nanofabrication challenges and extending the operating temperature range for efficient single photon detection.
Niobium titanium nitride-based superconducting nanowire single photon detectors (SNSPDs) are known for their high performance across a wide spectral range, from the x-ray to the mid-infrared. Nonetheless, fabrication challenges and performance degradation attributable to surface oxidation and lack of uniformity in films thinner than 5 nm remain a significant barrier for achieving high-quality detectors. In this work, we study the influence of a silicon capping layer on film properties and on the performance of SNSPDs. A silicon capping layer effectively suppresses oxidation and increases the superconducting transition temperature. This enables superconductivity in films as thin as 3 nm at 3 K, increases critical current in patterned nanowires, and significantly extends the saturation plateau from the visible to the near infrared (up to 2050 nm): These detectors maintain sub-50 ps timing jitter, even for nanowires as wide as 250 nm and with detection areas of 20 × 20μm2. Our results establish that thinner films protected by a capping layer allow for the fabrication of wider wires, decreasing nanofabrication challenges and extending the operating temperature range for efficient single photon detection.
Amorphous materials are attractive candidates for fabricating the superconducting nanowire single-photon detectors (SNSPDs) due to their superior tolerance and scalability over crystalline niobium nitride. However, the reduced superconducting transition temperature degenerates both operating temperature and saturation efficiency. Herein, the SNSPD (6.5 nm thickness and 50 nm width) based on the amorphous Mo 0.8 Si 0.2 film with a high optical absorption coefficient demonstrates close-to-unity intrinsic detection efficiency for 1550 nm photons from 75 mK to 2.2 K. Further, a high-performance array SNSPD with optimized 90 nm-width wires is also demonstrated. As-fabricated uniform 4-pixel SNSPD exhibits a saturation plateau for the photon counts at 2.2 K, which overcomes the limitation of operation at low temperature ( < 1 K ) for traditional amorphous SNSPDs. Coupled with superior intrinsic quantum efficiency, highly efficient photon counts, and low dark count ratio, this detector paves a way for achieving high efficiency and superior yield for large array systems.
Superconducting nanowire single-photon detectors (SNSPDs) have emerged as a highly promising infrared single-photon detector technology. Next-generation devices are being developed with enhanced detection efficiency (DE) at key technological wavelengths via the use of optical cavities. Furthermore, new materials and substrates are being explored for improved fabrication versatility, higher DE, and lower dark counts. We report on the practical performance of packaged NbTiN SNSPDs fabricated on oxidized silicon substrates in the wavelength range from 830 to 1700 nm. We exploit constructive interference from the SiO2/Si interface in order to achieve enhanced front-side fiber-coupled DE of 23.2 % at 1310 nm, at 1 kHz dark count rate, with 60 ps full width half maximum timing jitter.
Superconducting nanowire single photon detectors (SNSPDs) promise to combine near-unity quantum efficiency with >100 megacounts per second rates, picosecond timing jitter, and sensitivity ranging from x-ray to mid-infrared wavelengths. However, this promise is not yet fulfilled, as superior performance in all metrics is yet to be combined into one device. The highest single-pixel detection efficiency and the widest bias windows for saturated quantum efficiency have been achieved in SNSPDs based on amorphous materials, while the lowest timing jitter and highest counting rates were demonstrated in devices made from polycrystalline materials. Broadly speaking, the amorphous superconductors that have been used to make SNSPDs have higher resistivities and lower critical temperature (Tc) values than typical polycrystalline materials. Here, we demonstrate a method of preparing niobium nitride (NbN) that has lower-than-typical superconducting transition temperature and higher-than-typical resistivity. As we will show, NbN deposited onto unheated SiO2 has a low Tc and high resistivity but is too rough for fabricating unconstricted nanowires, and Tc is too low to yield SNSPDs that can operate well at liquid helium temperatures. By adding a 50 W RF bias to the substrate holder during sputtering, the Tc of the unheated NbN films was increased by up to 73%, and the roughness was substantially reduced. After optimizing the deposition for nitrogen flow rates, we obtained 5 nm thick NbN films with a Tc of 7.8 K and a resistivity of 253 μΩ cm. We used this bias sputtered room temperature NbN to fabricate SNSPDs. Measurements were performed at 2.5 K using 1550 nm light. Photon count rates appeared to saturate at bias currents approaching the critical current, indicating that the device's quantum efficiency was approaching unity. We measured a single-ended timing jitter of 38 ps. The optical coupling to these devices was not optimized; however, integration with front-side optical structures to improve absorption should be straightforward. This material preparation was further used to fabricate nanocryotrons and a large-area imager device, reported elsewhere. The simplicity of the preparation and promising device performance should enable future high-performance devices.