Enhanced telecom wavelength single-photon detection with NbTiN superconducting nanowires on oxidized silicon
Michael G. Tanner, Chandra M. Natarajan, V. K. Pottapenjara, John A. O’Connor, Richard John Warburton, Robert H. Hadfield, Burm Baek, Sae Woo Nam, Sander N. Dorenbos, Esteban Bermúdez‐Ureña, T. Zijlstra, T. M. Klapwijk, Val Zwiller
Superconducting nanowire single-photon detectors (SNSPDs) have emerged as a highly promising infrared single-photon detector technology. Next-generation devices are being developed with enhanced detection efficiency (DE) at key technological wavelengths via the use of optical cavities. Furthermore, new materials and substrates are being explored for improved fabrication versatility, higher DE, and lower dark counts. We report on the practical performance of packaged NbTiN SNSPDs fabricated on oxidized silicon substrates in the wavelength range from 830 to 1700 nm. We exploit constructive interference from the SiO2/Si interface in order to achieve enhanced front-side fiber-coupled DE of 23.2 % at 1310 nm, at 1 kHz dark count rate, with 60 ps full width half maximum timing jitter.
Superconducting nanowire single-photon detectors (SNSPDs) have emerged as a highly promising infrared single-photon detector technology. Next-generation devices are being developed with enhanced detection efficiency (DE) at key technological wavelengths via the use of optical cavities. Furthermore, new materials and substrates are being explored for improved fabrication versatility, higher DE, and lower dark counts. We report on the practical performance of packaged NbTiN SNSPDs fabricated on oxidized silicon substrates in the wavelength range from 830 to 1700 nm. We exploit constructive interference from the SiO2/Si interface in order to achieve enhanced front-side fiber-coupled DE of 23.2 % at 1310 nm, at 1 kHz dark count rate, with 60 ps full width half maximum timing jitter.
Single photon detection advanced rapidly in the last decade. The superconducting nanowire single-photon detector (SNSPD) is an emerging technology, which offers low dark count rates, broadband sensitivity from visible to mid-infrared wavelengths and very high quantum efficiency. All these features are appealing for future emerging applications in remote gas sensing, quantum key distribution and quantum information processing. By enclosing the detector in an optical cavity, tuned to the operating wavelength, the total system detection of the SNSPD is improved. Based on the cavity design, the detector absorption is boosted at the desired experimental wavelength. Devices have been fabricated and tested, in this thesis, with enhanced detection efficiency at near-infrared, infrared and mid-infrared wavelengths. NbTiN detectors fabricated on Ta2O5 / SiO2 distributed Bragg reflectors (DBR) for front-side coupling exhibit a system detection efficiency of ≈ 90% at λ = 940 nm for the best device measured. SNSPDs were also fabricated in NbTiN on metallic mirrors for back-side coupling for 1550 and 2333 nm experimental wavelengths. The first design exhibited a system detection efficiency of ≈ 84.5%, at λ = 1550 nm for the best device measured. The second exhibited low system detection efficiency since the device suffered from unexpectedly high dark count rate mainly due to blackbody radiation at 2.2 K. However, it was possible to measure the timing jitter of this device at 350 mK indicating a FWHM of 84 ps. Another technique to improve the total system detection efficiency of the SNSPD, is by fabricating a hairpin-shaped nanowire atop a single mode waveguide. In this design, photons travel through the waveguide and via evanescent coupling are absorbed in the nanowire. These SNSPD devices have been designed to thread along single mode Si ridge waveguides using a hairpin-shaped nanowire structure, which offers enhanced coupling and absorption efficiency via evanescent coupling. These ultra-thin superconducting MoSi detectors are precisely patterned on top of a single mode Si waveguide (600 nm) with alignment error less than 40 nm. Low temperature electrical and nano-optical characterization was carried out using a two-stage pulse tube (PT) coldhead, using an additional 4He / 3He sorption pump, low vibration characterization of SNSPD devices at 350 mK was carried out. Characterised devices exhibit low dark count rate <5 counts per second and timing jitter of ≈ 83 ps full width half maximum (FWHM) at wavelength (λ) = 1550 nm and at critical current ≈ 30 µA.
We present high performance fiber-coupled niobium titanium nitride superconducting nanowire single photon detectors fabricated on thermally oxidized silicon substrates. By applying a double sided cavity structure, simulated absorptance in the nanowire meander reached 97% at 1550 nm wavelength. The fabricated device showed a system detection efficiency (DE) of 74% at 1550 nm, dark count rate of 100 c/s, and a full width at half maximum timing jitter of 68 ps under a bias current of 18.0 μA with a practical Gifford-McMahon cryocooler system.
Ever since superconducting nanowire single-photon detectors (SNSPDs or SSPDs) were demonstrated, they have attracted a considerable attention due to the detectors’ promising performance that includes high detection efficiency (DE), low dark count rate (DCR), broadband sensitivity, and low timing jitter. The system detection efficiency (SDE) has been improved to be over 90% with a wavelength of 1550 nm in a fiber-coupled system by embedding the SNSPD in optical cavities. However, the implementation of optical cavity usually reduces the bandwidth of SNSPDs. As a result, there are some recent works on increasing the bandwidth of SNSPD. Furthermore, the size of the active area of meandered nanowires has to be compatible with the core size of an optical fiber such that good optical coupling can be achieved; this setup requires a long nanowire with a large kinetic inductance, thus resulting in a small counting rate and a large timing jitter, particularly for multi-mode fiber-coupled devices. Nevertheless, a particularly impressive waveguide-coupled SNSPD has been developed in recent years. By placing an SNSPD atop an optical waveguide that has been fabricated on various substrate materials, photons propagating in the waveguide have been found to be evanescently absorbed by nanowires that are only a few tens of microns long. The on-chip DE of this device has been estimated to be over 90%, thus indicating that it has both high absorptance and high intrinsic DE. If the waveguide and the nanowire are correctly dimensioned, the absorptance of this device can reach over 90% for a wavelength range of more than 700 nm. Furthermore, the length of the nanowire is shorter than that of the fiber-coupled SNSPD, thus leading to a higher count rate and lower timing jitter (~18 ps). However, unsatisfactory coupling losses between the optical fiber and the waveguide in such devices can decrease its SDE (~10%), thus limiting its applicability to quantum photonic integrated circuits (QPIC). Recently, we proposed a type of SNSPD that was coupled with microfibers (MFs), and simulations for this SNSPD indicated that its absorption would be as high as 90%. Microfibers and nanofibers, tapered adiabatically from standard fibers, with diameters close to or smaller than the wavelength of the guided light were demonstrated to have low transmittance losses by Tong et al. in 2003. MFs have been shown to have many interesting properties, such as strong evanescent fields, tight optical confinement, wideband abilities, and small masses; these properties are appealing for applications such as optical sensing and coupling. MFs also provide seamless connections with high transmittance from standard fibers; therefore, MF-coupled SNSPDs can achieve both high SDEs and wideband compatibility. We proposed and demonstrated the MF-coupled SNSPDs successfully. The simulation results indicate that with optimal device structure, the optical absorption with efficiency < 90% can be realized over a wavelength range of 350 nm to 2150 nm. The fabricated MF-coupled SNSPD, shows unparalleled broadband system detection efficiencies (SDEs) of more than 50% from 630 nm to 1500 nm. The SDEs reach 66% at 785 nm and 45% at 1550 nm. These results pave the way for ultra-broadband weak light detection with quantum-limit sensitivity.
Superconducting nanowire single-photon detectors are widely used for detecting individual photons across various wavelengths from ultraviolet to near-infrared range. Recently, there has been increasing interest in enhancing their sensitivity to single photons in the mid-infrared spectrum, driven by applications in quantum communication, spectroscopy, and astrophysics. Here, we present our efforts to expand the spectral detection capabilities of U-shaped NbTiN-based superconducting nanowire single-photon detectors, fabricated in a 2-wire configuration on a silicon-on-insulator substrate, into the mid-infrared range. We demonstrate saturated internal detection efficiency extending up to a wavelength of 3.5 μm for a 5 nm thick and 50 nm wide NbTiN nanowire with a dark count rate less than 10 counts per second at 0.9 K and a rapid recovery time of 4.3 ns. The detectors are engineered for integration on waveguides in a silicon-on-insulator platform for compact, multi-channel device applications.
Niobium nitride superconducting nanowire single-photon detectors were fabricated on thermally oxidized silicon substrates with large active areas of 30 μm× 30 μm.To achieve non-constricted detectors,we improved the film growth and electron beam lithography process to fabricate uniform 100-nm wide Nb N nanowires with a fill factor of 50%.The devices showed 72.4% system detection efficiency(SDE) at 100-Hz dark count rate(DCR) and 74-ps timing jitter,measured at the fiber communication wavelength of 1550 nm.The highest SDE which is 81.2% when the DCR is ～ 700 c/s appears at the wavelength of 1650 nm.
We develop single-photon detectors comprising single-mode fiber-coupled superconducting nanowires, with high system detection efficiencies at a wavelength of 940 nm. The detector comprises a 6.5-nm-thick, 110-nm-wide NbN nanowire meander fabricated onto a Si substrate with a distributed Bragg reflector for enhancing the optical absorptance. We demonstrate that, via the design of a low filling factor (1/3) and active area (Φ = 10 μm), the system reaches a detection efficiency of ∼60% with a dark count rate of 10 Hz, a recovery time <12 ns, and a timing jitter of ∼50 ps.