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arXiv:2408.15959 · Applied Physics Letters

Mid-infrared characterization of NbTiN superconducting nanowire single-photon detectors on silicon-on-insulator

Adan Azem, D. Morozov, Daniel Kuznesof, Ciro Bruscino, Robert H. Hadfield, Lukas Chrostowski, Jeff F. Young

Published Nov 18, 2024• 12 citations
arXivHTMLPDF

Abstract

Superconducting nanowire single-photon detectors are widely used for detecting individual photons across various wavelengths from ultraviolet to near-infrared range. Recently, there has been increasing interest in enhancing their sensitivity to single photons in the mid-infrared spectrum, driven by applications in quantum communication, spectroscopy, and astrophysics. Here, we present our efforts to expand the spectral detection capabilities of U-shaped NbTiN-based superconducting nanowire single-photon detectors, fabricated in a 2-wire configuration on a silicon-on-insulator substrate, into the mid-infrared range. We demonstrate saturated internal detection efficiency extending up to a wavelength of 3.5 μm for a 5 nm thick and 50 nm wide NbTiN nanowire with a dark count rate less than 10 counts per second at 0.9 K and a rapid recovery time of 4.3 ns. The detectors are engineered for integration on waveguides in a silicon-on-insulator platform for compact, multi-channel device applications.

DOI
10.1063/5.0237005

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Superconductor Science and Technology•Apr 1, 2026•1 citation
Superconducting nanowire single-photon detectors are widely used for detecting individual photons across various wavelengths from ultraviolet to near-infrared range. Recently, there has been increasing interest in enhancing their sensitivity to single photons in the mid-infrared spectrum, driven by applications in quantum communication, spectroscopy, and astrophysics. Here, we present our efforts to expand the spectral detection capabilities of U-shaped NbTiN-based superconducting nanowire single-photon detectors, fabricated in a 2-wire configuration on a silicon-on-insulator substrate, into the mid-infrared range. We demonstrate saturated internal detection efficiency extending up to a wavelength of 3.5 μm for a 5 nm thick and 50 nm wide NbTiN nanowire with a dark count rate less than 10 counts per second at 0.9 K and a rapid recovery time of 4.3 ns. The detectors are engineered for integration on waveguides in a silicon-on-insulator platform for compact, multi-channel device applications.
We present enhancements in the spectral sensitivity and scalability of superconducting nanowire single-photon detectors based on U-shaped NbTiN nanowires. Designed on a silicon-on-insulator photonic platform, our detectors exhibit near-unity internal detection efficiency under flood illumination across wavelengths from 1550nm to 3502nm. Additionally, we demonstrate arrays of waveguide-integrated superconducting nanowire single-photon detectors optimized for operation at 1550nm. Cryogenic light coupling to the arrays is achieved through a photonic wire bonding technique, enabling low-loss coupling and high-density integration, thereby facilitating the scaling of detector counts per cryostat for near-infrared applications.
Mid-infrared (MIR) single-photon detection is emerging as an important technology for various applications. Superconducting nanowire single photon detectors (SNSPDs) fabricated with superconducting films with energy gaps of a few meV are natural broadband single-photon detectors. Recently, extending SNSPDs’ operation wavelengths into the MIR region is highly attractive. γ-Nb4N3 has a reduced N content and lower energy gap than the commonly used δ-NbN, making SNSPDs based on γ-Nb4N3 film more sensitive to low energy photons. We report on a Nb4N3-SNSPD based on 62-nm wide nanowire, with an optical absorption enhancement design and an optimized device package for efficient ZBLAN fiber coupling and dark count filtering. The developed device has a unity intrinsic detection efficiency (IDE) in the 1.5–4 µm wavelength region, and the device detection efficiency at 2.95 µm was measured to be 32.5%, with an uncertainty of 12.7%. Furthermore, we reduced the device geometry, and measured 3–10 µm photon response of a device based on 5-nm film and 42-nm nanowire, with an IDE of 95%, 81%, 40%, and 6% for 4.8, 6, 8, and 10 µm, respectively.
Single photon detection advanced rapidly in the last decade. The superconducting nanowire single-photon detector (SNSPD) is an emerging technology, which offers low dark count rates, broadband sensitivity from visible to mid-infrared wavelengths and very high quantum efficiency. All these features are appealing for future emerging applications in remote gas sensing, quantum key distribution and quantum information processing. By enclosing the detector in an optical cavity, tuned to the operating wavelength, the total system detection of the SNSPD is improved. Based on the cavity design, the detector absorption is boosted at the desired experimental wavelength. Devices have been fabricated and tested, in this thesis, with enhanced detection efficiency at near-infrared, infrared and mid-infrared wavelengths. NbTiN detectors fabricated on Ta2O5 / SiO2 distributed Bragg reflectors (DBR) for front-side coupling exhibit a system detection efficiency of ≈ 90% at λ = 940 nm for the best device measured. SNSPDs were also fabricated in NbTiN on metallic mirrors for back-side coupling for 1550 and 2333 nm experimental wavelengths. The first design exhibited a system detection efficiency of ≈ 84.5%, at λ = 1550 nm for the best device measured. The second exhibited low system detection efficiency since the device suffered from unexpectedly high dark count rate mainly due to blackbody radiation at 2.2 K. However, it was possible to measure the timing jitter of this device at 350 mK indicating a FWHM of 84 ps. Another technique to improve the total system detection efficiency of the SNSPD, is by fabricating a hairpin-shaped nanowire atop a single mode waveguide. In this design, photons travel through the waveguide and via evanescent coupling are absorbed in the nanowire. These SNSPD devices have been designed to thread along single mode Si ridge waveguides using a hairpin-shaped nanowire structure, which offers enhanced coupling and absorption efficiency via evanescent coupling. These ultra-thin superconducting MoSi detectors are precisely patterned on top of a single mode Si waveguide (600 nm) with alignment error less than 40 nm. Low temperature electrical and nano-optical characterization was carried out using a two-stage pulse tube (PT) coldhead, using an additional 4He / 3He sorption pump, low vibration characterization of SNSPD devices at 350 mK was carried out. Characterised devices exhibit low dark count rate <5 counts per second and timing jitter of ≈ 83 ps full width half maximum (FWHM) at wavelength (λ) = 1550 nm and at critical current ≈ 30 µA.
Single-photon counting has become an essential tool in quantum optics experiments, as well as remote sensing and life science applications. However conventional technologies such as single-photon avalanche diodes, as well as the availability of standard telecom optical components, has limited much of this work to the near infrared/telecom wavelength range. Superconducting nanowire single photon detectors (SNSPDs) have emerged in recent years as the gold standard in photon counting applications due to their low dark count rates, fast timing resolution and high efficiency [1]. SNSPDs have also demonstrated photon counting efficiency out to much greater wavelengths which enables us to explore new experimental possibilities in the mid-infrared [2]. In this work we design and fabricate mid-infrared SNSPDs and deploy them in a variety of photon counting experiments [3,4]. The devices are based on a NbTiN superconducting film integrated into an optical cavity to enhance absorption in the mid-infrared. We characterise these devices using an optical parametric oscillator, tuneable between 1.5 m and 4.2 m. We then deploy these in a proof-of-principle tabletop light detection and ranging (LIDAR) experiment at 2.3 m. LIDAR in the mid-infrared is attractive due to spectral regions of low atmospheric absorption and reduced solar background photon flux, when compared to telecom wavelengths. We also present results from a photon-pair source operating at 2 m. This is a key resource for extending quantum optics and quantum secure communications to the mid infrared domain. Pairs are generated using a custom lithium niobate crystal and detected using SNSPDs. We demonstrate two-photon interference and polarisation entanglement of the photon pairs at 2 m. This work opens the pathway to future development of quantum optics and quantum technologies in the mid-infrared spectral region. References [1] Gol’tsman et al Applied Physics Letters 79 705 (2001) [2] Marisli et al Nano Letters 12 (9) 4799 (2012) [3] G. G. Taylor et al Optics Express 26 (27) 38147 (2018) [4] S. Prabhakar et al Science Advances 6 (13) eaay5195 (2019)
Shortly after their inception, superconducting nanowire single-photon detectors (SNSPDs) became the leading quantum light detection technology. With the capability of detecting single-photons with near-unity efficiency, high time resolution, low dark count rate, and fast recovery time, SNSPDs outperform conventional single-photon detection techniques. However, detecting lower energy single photons ( < 0.8 eV ) with high efficiency and low timing jitter has remained a challenge. To achieve unity internal efficiency at mid-infrared wavelengths, previous works used amorphous superconducting materials with low energy gaps at the expense of reduced time resolution (close to a nanosecond), and by operating them in complex milliKelvin (mK) dilution refrigerators. In this work, we provide an alternative approach with SNSPDs fabricated from 5 to 9.5 nm thick NbTiN superconducting films and devices operated in conventional Gifford-McMahon cryocoolers. By optimizing the superconducting film deposition process, film thickness, and nanowire design, our fiber-coupled devices achieved > 70 % system detection efficiency (SDE) at 2 μm and sub-15 ps timing jitter. Furthermore, detectors from the same batch demonstrated unity internal detection efficiency at 3 μm and 80% internal efficiency at 4 μm, paving the road for an efficient mid-infrared single-photon detection technology with unparalleled time resolution and without mK cooling requirements. We also systematically studied the dark count rates (DCRs) of our detectors coupled to different types of mid-infrared optical fibers and blackbody radiation filters. This offers insight into the trade-off between bandwidth and DCRs for mid-infrared SNSPDs. To conclude, this paper significantly extends the working wavelength range for SNSPDs made from polycrystalline NbTiN to 1.5–4 μm, and we expect quantum optics experiments and applications in the mid-infrared range to benefit from this far-reaching technology.
Abstract The advancement of superconducting nanowire single-photon detectors (SNSPDs or SSPDs) is intrinsically linked to breakthroughs in superconducting materials engineering. These detectors are prized for their excellent sensitivity and performance across a wide wavelength range, from ultra-violet to mid-infrared (mid-IR). Plasma-enhanced atomic layer deposition (ALD) is an advanced deposition technique that enables exceptional film uniformity across large wafers, making it ideal for a variety of applications. In this study, ALD NbTiN films are fabricated into SNSPDs that exhibit single-photon response across near- to mid-IR wavelengths. A 5 nm thick NbTiN film was patterned into devices consisting of ∼100 nm wide meandered nanowires, and the nanowire cross-section and composition were analysed by transmission electron microscopy. The devices were tested in a closed-cycle cryostat with a base temperature of 0.9 K. Photon detection rate and timing jitter were measured across the wavelength range 1.5–4.4 µ m under low dark count conditions, confirming single-photon sensitivity across the measured wavelength bands. This work introduces the ALD-grown NbTiN films as a new platform for SNSPD detectors, achieving mid-IR single-photon sensitivity. The intact film quality after fabrication demonstrates the potential of ALD processes for scalable infrared detector technologies.