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Topical Meeting on Optical Bistability (OB)

Steady-State and Time-Resolved Excitonic Optical Nonlinearities in MBE-Grown ZnSe

S. H. PARK, B. Fluegel, R. Morgan, M. Joffre, Jason P. Sokoloff, S. W. Koch, Nasser N. Peyghambarian, John E. Potts, Hai‐Ping Cheng

Published Jan 1, 1988• 0 citations
Publisher

Abstract

ZnSe and ZnS are known to have a thermal nonlinearity. This has been used in the past for demonstrating optical bistability1,2,3, however the thermal nature of the nonlinearity makes these switches inherently slow and inefficient. Here we have measured the nonlinear spectra and decay times for a large, fast, electronic nonlinearity in MBE-grown thin films of ZnSe. These samples were grown on GaAs substrates which were then removed by chemical etching.

DOI
10.1364/obi.1988.tha.3

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ZnSe and ZnS are known to have a thermal nonlinearity. This has been used in the past for demonstrating optical bistability1,2,3, however the thermal nature of the nonlinearity makes these switches inherently slow and inefficient. Here we have measured the nonlinear spectra and decay times for a large, fast, electronic nonlinearity in MBE-grown thin films of ZnSe. These samples were grown on GaAs substrates which were then removed by chemical etching.
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