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OPTICAL BISTABILITY IN ZINC-SULFIDE AND ZINC-SELENIDE THIN-FILM INTERFERENCE FILTERS AND IN GALLIUM-ARSENIDE AND COPPER-CHLORIDE ETALONS (NONLINEAR).

Doreen A. Weinberger

Published Jan 1, 1984• 0 citations

Abstract

Two-photon optical bistability in commercial thin-film interference filters with ZnS and ZnSe spacers is observed with switching times ≳ 200 μs. The accompanying drifting of the bistability loop in time and laser-induced "damage" indicate a thermal mechanism. The problem of water vapor absorption in such filters must be addressed before the inherent potential and advantages of these devices in two-dimensional image processing applications can be realized. Trans- verse effects in GaAs superlattice etalons are observed which cannot be explained on the basis of a plane-wave analysis. The optical nonlinearity in GaAs and diffraction combine to produce drastic effects on the measured beam profiles and bistable loops, due to an intensity-dependent virtual focus. Lastly, the first observation of optical bistability due to a biexcitonic nonlinearity in CuCl etalons is reported with detector-limited switching times of 600 ps. In addition, lasing action along the pump axis in a cavity defined by the end mirrors is observed in a very thin (2.0 μm) CuCl etalon. The lasing transition is unique in that it involves the creation of a virtual excitation of biexcitons which decay to the longitudinal exciton state.

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Two-photon optical bistability in commercial thin-film interference filters with ZnS and ZnSe spacers is observed with switching times ≳ 200 μs. The accompanying drifting of the bistability loop in time and laser-induced "damage" indicate a thermal mechanism. The problem of water vapor absorption in such filters must be addressed before the inherent potential and advantages of these devices in two-dimensional image processing applications can be realized. Trans- verse effects in GaAs superlattice etalons are observed which cannot be explained on the basis of a plane-wave analysis. The optical nonlinearity in GaAs and diffraction combine to produce drastic effects on the measured beam profiles and bistable loops, due to an intensity-dependent virtual focus. Lastly, the first observation of optical bistability due to a biexcitonic nonlinearity in CuCl etalons is reported with detector-limited switching times of 600 ps. In addition, lasing action along the pump axis in a cavity defined by the end mirrors is observed in a very thin (2.0 μm) CuCl etalon. The lasing transition is unique in that it involves the creation of a virtual excitation of biexcitons which decay to the longitudinal exciton state.

Semiconductors exhibit large optical nonlinearities near the band edge because of resonance enhancement. Optical bistability occurs when the optical nonlinearities are coupled with feedback. In bulk GaAs and GaAs–AlGaAs multiple-quantum-well superlattices, the nonlinearity arising from the presence of the free-exciton resonance has produced room-temperature optical bistability with a few milliwatts of power. The formation of biexcitons in CuCl, the saturation of the bound exciton on CdS, and band-filling effects in InSb, InAs, and HgCdTe lead to observation of bistability in these materials. A bistable etalon can be operated in an optical-gate mode to generate optical analogs of electronic gates such as and, or, and nor. It has been demonstrated that a GaAs optical NOR gate responds in ∼1 psec, using only ≲3 pJ of energy. However, because of the carrier lifetime of a few nanoseconds, the repetition rate of the NOR gate is now limited to a few hundred megahertz.

In this paper we present the basic principles of optical bistability and summarize the current advances in semiconductor optical switching, with emphasis on recent results in GaAs, CuCI, InAs, InSb, CdS, ZnS, and ZnSe etalons. These devices have great potential for applications involving optical signal processing and computing. As an example, we discuss the use of arrays of bistable devices for parallel optical processing and for addressable spatial light modulators. The use of nonlinear etalons as optical gates is also illustrated. To date, GaAs devices have shown the most favorable characteristics for practical applications. They operate at room temperature with a few milliwatts of power using a laser diode as the only light source. Quasi-cw operation and optical fiber signal regeneration have also been demonstrated. A GaAs NOR gate operates in 1 ps with <3 pJ incident energy; this, of course, implies a 1 ps switch-on time for a bistable etalon.