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Journal of Applied Physics

Thermally induced optical bistability in ZnSe epilayers grown by molecular-beam epitaxy

Gotthard Kudlek, Jörg Hollandt, N. Presser, J. Gutowski, Stephen M. Durbin, D. Menke, M. Kobayashi, Robert L. Gunshor

Published Sep 1, 1990• 7 citations
Publisher

Abstract

For the first time, ZnSe epitaxial layers grown by molecular-beam epitaxy are shown to exhibit large contrast, low power, and extremely long-term stable thermally induced absorptive optical bistability. It is observed over a wide temperature range between 169 K and RT, with a strongly variable loop width and a switch-back adjustable to be less than 50% of the respective switch-down value. Critical slowing down as well as switch-down times are studied in dependence of the excess over the switch-down intensity values.

DOI
10.1063/1.346475

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For the first time, ZnSe epitaxial layers grown by molecular-beam epitaxy are shown to exhibit large contrast, low power, and extremely long-term stable thermally induced absorptive optical bistability. It is observed over a wide temperature range between 169 K and RT, with a strongly variable loop width and a switch-back adjustable to be less than 50% of the respective switch-down value. Critical slowing down as well as switch-down times are studied in dependence of the excess over the switch-down intensity values.
The switching dynamics of thermally induced optical bistability in ZnSe nonlinear interference filters is investigated experimentally and theoretically. The device, maintained on its low transmission level by a cw argon laser beam, is switched on its high transmission level by an external light pulse. Either a very fast switching or an important slowing down are obtained when the holding cw intensity or the switching pulse energy are well chosen. This variation of the switching times is analyzed theoretically and observed experimentally.