Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Laser Physics Letters

Realization of phase dependent optical bistability in a quantum dot molecule via three-wave mixing

Donghui Wang

Published Aug 9, 2022• 4 citations
Publisher

Abstract

Abstract In this paper, we have proposed a new model based on the electron tunneling effect for controlling the optical bistability (OB) and optical multistability (OM) in a defect slab structure with a quantum dot molecule (QDM). Due to the presence of the electron tunneling effect, an additional weak signal beam can be generated in the system which makes the medium becomes phase dependent. We have studied the refractive index properties of the QDM via optical susceptibility of the propagated probe light. We have discussed the relative phase effect on negative refractive index (NRI) of the QDM nanostructure due to presence of electron tunneling. Then, by using the transfer matrix method, we have studied the transmission coefficient for NRI of the QDM nanostructure. Then, we have investigated the properties of transmitted light versus incident light for realizing the OB and OM. We have considered the relative phase effect on OB and OM properties of the transmitted beam and find that the switching between them is possible when electron tunneling is present in the quantum dot. Moreover, the optical thickness of the defect layer is also investigated on OB and OM in resonance and non-resonance conditions.

DOI
10.1088/1612-202x/ac81b5

Related papers

Optical bistability in a negative refractive index media using the electron tunneling effect

Rima Sahandi, Ahad Darkhosh

Abstract In this letter, we proposed a brand-new version for investigating the optical bistability (OB) and optical multistability (OM) through electron tunneling impact in a defect one-dimensional photonic crystal (1DPC). The defect layer of 1DPC is doped with double quantum dot (DQD) nanostructure which interacts with an indirect incoherent pump and a susceptible probe incident light, respectively. By the usage of the quantum mechanical density matrix method, we first examine the refractive index properties of the defect layer through electron tunneling and indirect incoherent pumping effects. Then, through the usage of the transfer matrix methods, we acquire the reflection and transmission coefficients of the defect 1DPC. At the end, we discuss the OB and OM properties of the reflected and transmitted lighting in negative refractive index situation of the DQD. We determine that during a few parametric conditions the switching from OB to OM or vice versa is feasible for reflected and transmitted light beams.

Laser Physics Letters•Apr 7, 2022•5 citations

Transition from optical bistability to multistability in a tunneling quantum dot via structure hybrid light

Qiang Li, Zhao Yang

In this paper, we proposed a new model based on the electron tunneling effect in a four-level quantum dot molecule (QDM) for studying the optical bistability (OB) and optical multistability (OM). The QDM interacts with a probe and two coupling and Laguerre–Gaussian (LG) fields. We found that by adjusting the electron tunneling effect and the parametric controlling of LG light, the transition from OB to OM or vice versa is possible. Moreover, due to the simultaneous interaction between coupling and LG lights with the same optical transition adjusting the threshold of OB and OM by orbital angular momentum (OAM) of the LG light becomes achievable. Our results show that by adjusting the simultaneous effect of electron tunneling and OAM state of the vortex light, the favorable OB and OM patterns with adjustable intensity thresholds are achievable. Our proposed model may have potential application in quantum information science based on quantum dot (QD) devices.

Modern Physics Letters B•Jul 5, 2023•0 citations

All-optical switching between optical bistability and multistability in a defect dielectric medium doped with a multiple quantum well nanostructure

Seyyed Hossein Asadpour, Ghahraman Solookinejad, M. Panahi +1 more

In this paper, optical bistability (OB) and multistability (OM) properties of a defect dielectric slab are studied. A GsAs multiple quantum well nanostructure (MQW) with 17.5 nm GaAs wells and 15 nm Al(0.3) Ga(0.7) barriers is used in the dielectric medium as a defect layer. Therefore, properties of the refractive index of the slab can be changed in the presence of MQWs. It is observed that switching from OB to OM can be obtained by controlling some external parameters. We find that the exciton spin relaxation and thickness of the slab have essential roles in adjusting the OB and OM properties of the probe light through the slab. Moreover, transmission, reflection, and absorption properties of the propagating pulse through the slab are also discussed. We show that the subluminal and superluminal light transmission or reflection can be obtained via amplification of the probe pulse through the medium. We hope that our proposed model may be suitable for the development of nanoscale devices in all-optical quantum information technology.

Applied Optics•Jan 20, 2016•5 citations

Controlling of optical bistability and multistability in a defect slab

Masoud Jabbari

Abstract Optical bistability (OB) and optical multistability (OM) due to wide applications in all-optical switching and transistors is studied in this paper. Here, we study the OB and OM properties of incident light in a defect slab doped by a GaAs quantum well (QW) nanostructure. It is shown that OB and OM features can be manipulated by spin coherence created by circular polarized laser fields in GaAs QWs. The impacts of laser field features, such as intensity, frequency detuning, and relative phase, on OB and OM are simulated. Moreover, the dependence of OB and OM features of a probe light on the thickness of the slab, then, are analyzed. It is found that the thickness of the slab can provide a new way to optimize the intensity threshold of OB and OM. We hope that our proposed model may be useful for developing all-optical devices on nanoscales.

Laser Physics•Jan 12, 2016•2 citations

Optical bistability in a defect slab with a negative refractive quantum dot nanostructure

M. Jamshidnejad, E. Asadi Amirabadi, Sedigheh Miraboutalebi +1 more

We demonstrate optical bistability (OB) in a defect slab doped V-type four-level InGaN/GaN quantum dot nanostructure in the negative refraction frequency band. It has been shown that the OB behavior of such a quantum dot nanostructure system can be controlled by the amplitude of the driving fields and a new parameter for controlling the OB behavior as thickness of the slab medium in the negative refraction band. Meanwhile, we show that the negative refraction frequency band can be controlled by tuning electric permittivity and magnetic permeability by the amplitude of the driving fields and electron concentration in the defect slab doped. Under the numerical simulations, due to the effect of quantum coherence and interference, it is possible to switch bistability by adjusting the optimal conditions in the negative refraction frequency band, which is more practical in all-optical switching or coding elements, and technology based nanoscale devices.

Journal of Experimental and Theoretical Physics Letters•Nov 1, 2016•2 citations

Low threshold optical bistability and superluminal light propagation using a dielectric slab via inter-dot tunneling

S Taherzadeh, Rajab Nasehi, Mohammad Mahmoudi

The optical bistability (OB) behavior of a dielectric slab doped with quantum dot (QD) molecules is investigated in the presence of the inter-dot tunneling effect. It is shown that the threshold point of OB reduces by increasing inter-dot tunneling as well as by reducing the slab thickness. It is worth noting that the threshold of OB in a slab doped with QD molecules is smaller, by at least one order of magnitude, in respect to free QD molecules. We find that the inter-dot tunneling induces a negative group delay to the reflected pulse and it propagates in the superluminal region. Such simple control can be used in all optical switching.

Laser Physics•Mar 10, 2015•5 citations
Abstract In this paper, we have proposed a new model based on the electron tunneling effect for controlling the optical bistability (OB) and optical multistability (OM) in a defect slab structure with a quantum dot molecule (QDM). Due to the presence of the electron tunneling effect, an additional weak signal beam can be generated in the system which makes the medium becomes phase dependent. We have studied the refractive index properties of the QDM via optical susceptibility of the propagated probe light. We have discussed the relative phase effect on negative refractive index (NRI) of the QDM nanostructure due to presence of electron tunneling. Then, by using the transfer matrix method, we have studied the transmission coefficient for NRI of the QDM nanostructure. Then, we have investigated the properties of transmitted light versus incident light for realizing the OB and OM. We have considered the relative phase effect on OB and OM properties of the transmitted beam and find that the switching between them is possible when electron tunneling is present in the quantum dot. Moreover, the optical thickness of the defect layer is also investigated on OB and OM in resonance and non-resonance conditions.
Abstract In this letter, we proposed a brand-new version for investigating the optical bistability (OB) and optical multistability (OM) through electron tunneling impact in a defect one-dimensional photonic crystal (1DPC). The defect layer of 1DPC is doped with double quantum dot (DQD) nanostructure which interacts with an indirect incoherent pump and a susceptible probe incident light, respectively. By the usage of the quantum mechanical density matrix method, we first examine the refractive index properties of the defect layer through electron tunneling and indirect incoherent pumping effects. Then, through the usage of the transfer matrix methods, we acquire the reflection and transmission coefficients of the defect 1DPC. At the end, we discuss the OB and OM properties of the reflected and transmitted lighting in negative refractive index situation of the DQD. We determine that during a few parametric conditions the switching from OB to OM or vice versa is feasible for reflected and transmitted light beams.
In this paper, we proposed a new model based on the electron tunneling effect in a four-level quantum dot molecule (QDM) for studying the optical bistability (OB) and optical multistability (OM). The QDM interacts with a probe and two coupling and Laguerre–Gaussian (LG) fields. We found that by adjusting the electron tunneling effect and the parametric controlling of LG light, the transition from OB to OM or vice versa is possible. Moreover, due to the simultaneous interaction between coupling and LG lights with the same optical transition adjusting the threshold of OB and OM by orbital angular momentum (OAM) of the LG light becomes achievable. Our results show that by adjusting the simultaneous effect of electron tunneling and OAM state of the vortex light, the favorable OB and OM patterns with adjustable intensity thresholds are achievable. Our proposed model may have potential application in quantum information science based on quantum dot (QD) devices.
In this paper, optical bistability (OB) and multistability (OM) properties of a defect dielectric slab are studied. A GsAs multiple quantum well nanostructure (MQW) with 17.5 nm GaAs wells and 15 nm Al(0.3) Ga(0.7) barriers is used in the dielectric medium as a defect layer. Therefore, properties of the refractive index of the slab can be changed in the presence of MQWs. It is observed that switching from OB to OM can be obtained by controlling some external parameters. We find that the exciton spin relaxation and thickness of the slab have essential roles in adjusting the OB and OM properties of the probe light through the slab. Moreover, transmission, reflection, and absorption properties of the propagating pulse through the slab are also discussed. We show that the subluminal and superluminal light transmission or reflection can be obtained via amplification of the probe pulse through the medium. We hope that our proposed model may be suitable for the development of nanoscale devices in all-optical quantum information technology.
Abstract Optical bistability (OB) and optical multistability (OM) due to wide applications in all-optical switching and transistors is studied in this paper. Here, we study the OB and OM properties of incident light in a defect slab doped by a GaAs quantum well (QW) nanostructure. It is shown that OB and OM features can be manipulated by spin coherence created by circular polarized laser fields in GaAs QWs. The impacts of laser field features, such as intensity, frequency detuning, and relative phase, on OB and OM are simulated. Moreover, the dependence of OB and OM features of a probe light on the thickness of the slab, then, are analyzed. It is found that the thickness of the slab can provide a new way to optimize the intensity threshold of OB and OM. We hope that our proposed model may be useful for developing all-optical devices on nanoscales.
We demonstrate optical bistability (OB) in a defect slab doped V-type four-level InGaN/GaN quantum dot nanostructure in the negative refraction frequency band. It has been shown that the OB behavior of such a quantum dot nanostructure system can be controlled by the amplitude of the driving fields and a new parameter for controlling the OB behavior as thickness of the slab medium in the negative refraction band. Meanwhile, we show that the negative refraction frequency band can be controlled by tuning electric permittivity and magnetic permeability by the amplitude of the driving fields and electron concentration in the defect slab doped. Under the numerical simulations, due to the effect of quantum coherence and interference, it is possible to switch bistability by adjusting the optimal conditions in the negative refraction frequency band, which is more practical in all-optical switching or coding elements, and technology based nanoscale devices.
The optical bistability (OB) behavior of a dielectric slab doped with quantum dot (QD) molecules is investigated in the presence of the inter-dot tunneling effect. It is shown that the threshold point of OB reduces by increasing inter-dot tunneling as well as by reducing the slab thickness. It is worth noting that the threshold of OB in a slab doped with QD molecules is smaller, by at least one order of magnitude, in respect to free QD molecules. We find that the inter-dot tunneling induces a negative group delay to the reflected pulse and it propagates in the superluminal region. Such simple control can be used in all optical switching.