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Laser Physics

Controlling of optical bistability and multistability in a defect slab

Masoud Jabbari

Published Jan 12, 2016• 2 citations
Publisher

Abstract

Abstract Optical bistability (OB) and optical multistability (OM) due to wide applications in all-optical switching and transistors is studied in this paper. Here, we study the OB and OM properties of incident light in a defect slab doped by a GaAs quantum well (QW) nanostructure. It is shown that OB and OM features can be manipulated by spin coherence created by circular polarized laser fields in GaAs QWs. The impacts of laser field features, such as intensity, frequency detuning, and relative phase, on OB and OM are simulated. Moreover, the dependence of OB and OM features of a probe light on the thickness of the slab, then, are analyzed. It is found that the thickness of the slab can provide a new way to optimize the intensity threshold of OB and OM. We hope that our proposed model may be useful for developing all-optical devices on nanoscales.

DOI
10.1088/1054-660x/26/2/025202

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Abstract In this letter, controllable optical bistability (OB) and optical multistability (OM) in a defect slab doped with a single-layer graphene nanostructure are proposed. Our numerical results show that it is easy to control OB by Rabi frequencies of coupling fields, detuning of coherent fields, and relative phase of applied fields. Moreover, the thickness effect of the slab is considered as a new parameter for controlling the OB behaviors. It is found that the transition from OB to OM or vice versa can be made possible by the thickness of the slab and relative phase of the applied fields. We hope that our results will have potential applications in quantum information science and technology based nanoscale devices.
In this paper, optical bistability (OB) and multistability (OM) properties of a defect dielectric slab are studied. A GsAs multiple quantum well nanostructure (MQW) with 17.5 nm GaAs wells and 15 nm Al(0.3) Ga(0.7) barriers is used in the dielectric medium as a defect layer. Therefore, properties of the refractive index of the slab can be changed in the presence of MQWs. It is observed that switching from OB to OM can be obtained by controlling some external parameters. We find that the exciton spin relaxation and thickness of the slab have essential roles in adjusting the OB and OM properties of the probe light through the slab. Moreover, transmission, reflection, and absorption properties of the propagating pulse through the slab are also discussed. We show that the subluminal and superluminal light transmission or reflection can be obtained via amplification of the probe pulse through the medium. We hope that our proposed model may be suitable for the development of nanoscale devices in all-optical quantum information technology.
We proposed a new model for controlling the optical bistability (OB) and optical multistability (OM) in a defect slab doped with four-level GaAs/AlGaAs multiple quantum wells with 15 periods of 17.5 nm GaAs wells and 15-nm Al 0.3 Ga 0.7 As barriers. The effects of biexciton energy renormalization, exciton spin relaxation, and thickness of the slab on the OB and OM properties of the defect slab were theoretically investigated. We found that the transition from OB to OM or vice versa is possible by adjusting the controllable parameters in a lab. Moreover, the transmission, reflection, and absorption properties of the weak probe light through the slab were also discussed in detail.
In this study, we explore the optical bistability (OB) and multistability (OM) features of probe light propagating in a multiple quantum well (MQW) nanostructure embedded in a dielectric medium. It is realized that via light hole (LH) transition between valance bands and conduction band of MQWs with different electron states, the electron spin coherence can be created which can be used to controlling the OB and OM properties. It is realized that the thickness of dielectric slab can lead to adjusting the threshold of OB in different intensities of input field. Moreover, it is found that the transition from OB to OM or vice versa can be possible by selection of suitable quantity of slab thickness. In addition, the role of relative phase of applied fields on OB and OM manners is discussed in different quantities of thickness. Our results may be suitable for developing nanoscale devices in quantum information science and technologies for future applications.
The theoretical investigation of controlling the optical bistability (OB) and optical multistability (OM) in a dielectric medium doped with nanodiamond nitrogen vacancy centres under optical excitation are reported. The shape of the OB curve from dielectric slab can be tuned by changing the external magnetic field and polarization of the control beam. The effect of the intensity of the control laser field and the frequency detuning of probe laser field on the OB and OM behaviour are also discussed in this paper. The results obtained can be used for realizing an all-optical bistable switching or development of nanoelectronic devices.
This paper deals with optical bistability (OB) and optical multistability (OM) behaviors for a triple semiconductor quantum well (SQW) structure driven coherently with two control fields, confined in a unidirectional ring cavity. The effect of different system parameters on OB and OM is explored. It is found that the threshold of onset of the OB can be controlled by manipulating the Rabi frequency of control fields. In this case, OB can be converted to OM. Then we investigate the effect of probe and control field detunings on OB behaviors. We found that the frequency detuning of probe field affects only the upper–lower branches of the OB curves but has no specific impact on OB threshold. By manipulating the first control field detuning, neither the OB threshold intensity nor upper–lower branches change. Finally, it is found that increasing the second control field detuning can reduce merely the OB threshold intensity, while no change happens in upper–lower OB branches. The results may be applicable in real experiments for realizing an all-optical switching or coding element in a solid-state platform.