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Chinese Physics B

Optical bistability and multistability in a defect slab doped by GaAs/AlGaAs multiple quantum wells

Seyyed Hossein Asadpour, Ghahraman Solookinejad, M. Panahi, Elnaz Ahmadi Sangachin

Published May 1, 2016• 2 citations
Publisher

Abstract

We proposed a new model for controlling the optical bistability (OB) and optical multistability (OM) in a defect slab doped with four-level GaAs/AlGaAs multiple quantum wells with 15 periods of 17.5 nm GaAs wells and 15-nm Al 0.3 Ga 0.7 As barriers. The effects of biexciton energy renormalization, exciton spin relaxation, and thickness of the slab on the OB and OM properties of the defect slab were theoretically investigated. We found that the transition from OB to OM or vice versa is possible by adjusting the controllable parameters in a lab. Moreover, the transmission, reflection, and absorption properties of the weak probe light through the slab were also discussed in detail.

DOI
10.1088/1674-1056/25/5/054208

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We proposed a new model for controlling the optical bistability (OB) and optical multistability (OM) in a defect slab doped with four-level GaAs/AlGaAs multiple quantum wells with 15 periods of 17.5 nm GaAs wells and 15-nm Al 0.3 Ga 0.7 As barriers. The effects of biexciton energy renormalization, exciton spin relaxation, and thickness of the slab on the OB and OM properties of the defect slab were theoretically investigated. We found that the transition from OB to OM or vice versa is possible by adjusting the controllable parameters in a lab. Moreover, the transmission, reflection, and absorption properties of the weak probe light through the slab were also discussed in detail.
In this paper, optical bistability (OB) and multistability (OM) properties of a defect dielectric slab are studied. A GsAs multiple quantum well nanostructure (MQW) with 17.5 nm GaAs wells and 15 nm Al(0.3) Ga(0.7) barriers is used in the dielectric medium as a defect layer. Therefore, properties of the refractive index of the slab can be changed in the presence of MQWs. It is observed that switching from OB to OM can be obtained by controlling some external parameters. We find that the exciton spin relaxation and thickness of the slab have essential roles in adjusting the OB and OM properties of the probe light through the slab. Moreover, transmission, reflection, and absorption properties of the propagating pulse through the slab are also discussed. We show that the subluminal and superluminal light transmission or reflection can be obtained via amplification of the probe pulse through the medium. We hope that our proposed model may be suitable for the development of nanoscale devices in all-optical quantum information technology.
Abstract Optical bistability (OB) and optical multistability (OM) due to wide applications in all-optical switching and transistors is studied in this paper. Here, we study the OB and OM properties of incident light in a defect slab doped by a GaAs quantum well (QW) nanostructure. It is shown that OB and OM features can be manipulated by spin coherence created by circular polarized laser fields in GaAs QWs. The impacts of laser field features, such as intensity, frequency detuning, and relative phase, on OB and OM are simulated. Moreover, the dependence of OB and OM features of a probe light on the thickness of the slab, then, are analyzed. It is found that the thickness of the slab can provide a new way to optimize the intensity threshold of OB and OM. We hope that our proposed model may be useful for developing all-optical devices on nanoscales.
The absorption, transmission and reflection properties of two incident probe and signal pulses through a defect slab doped with four-level GaAs/AlGaAs multiple quantum wells with 15 periods of 17.5 nm GaAs wells and 15 nm Al0.3 Ga0.7 as barriers is theoretically discussed. It is shown that the biexciton coherence leads to the phase control of the absorption, transmission and reflection properties of two weak probe and signal beams. We will also show that the exciton spin relaxation between excitonic states can affect the slow and fast light propagation of transmitted and reflected pulses with amplification in a defect slab with dispersive material. Our results show that many particle interactions due to Coulomb correlations in semiconductors can lead to the controlling of light propagation through the defect dielectric medium.
In this paper, long wavelength superluminal and subluminal properties of pulse propagation in a defect slab medium doped with four-level GaAs/AlGaAs multiple quantum wells (MQWs) with 15 periods of 17.5 nm GaAs wells and 15 nm [Formula: see text] barriers is theoretically discussed. It is shown that exciton spin relaxation (ESR) between excitonic states in MQWs can be used for controlling the superluminal and subluminal light transmissions and reflections at different wavelengths. We also show that reflection and transmission coefficients depend on the thickness of the slab for the resonance and nonresonance conditions. Moreover, we found that the ESR for nonresonance condition lead to superluminal light transmission and subluminal light reflection.
Phase control of two weak probe lights’ transmission and reflection based biexciton coherence in a defect dielectric medium doped by four-level GaAs/AlGaAs multiple quantum wells with 15 periods of 17.5 nm GaAs wells and 15 nm Al0.3Ga0.7As barriers is theoretically investigated. The biexciton coherence in this scheme is set up by two continuous wave control fields that couple to a resonance of biexcitons. It is shown that the transmission and reflection properties versus relative phase between applied fields can be controlled by the intensity of control fields and exciton spin relaxation between exciton states. Our studies show that many-particle interactions due to Coulomb correlations in semiconductors can be harnessed by quantum coherence in an interacting many-particle system.
Abstract In this letter, controllable optical bistability (OB) and optical multistability (OM) in a defect slab doped with a single-layer graphene nanostructure are proposed. Our numerical results show that it is easy to control OB by Rabi frequencies of coupling fields, detuning of coherent fields, and relative phase of applied fields. Moreover, the thickness effect of the slab is considered as a new parameter for controlling the OB behaviors. It is found that the transition from OB to OM or vice versa can be made possible by the thickness of the slab and relative phase of the applied fields. We hope that our results will have potential applications in quantum information science and technology based nanoscale devices.