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Laser Physics

Simultaneous slow and fast light transmission-reflection with amplification in a defect slab via exciton spin relaxation

Seyyed Hossein Asadpour, HAMID RAHIMPOUR SOLEIMANI

Published Oct 9, 2014• 2 citations
Publisher

Abstract

The absorption, transmission and reflection properties of two incident probe and signal pulses through a defect slab doped with four-level GaAs/AlGaAs multiple quantum wells with 15 periods of 17.5 nm GaAs wells and 15 nm Al0.3 Ga0.7 as barriers is theoretically discussed. It is shown that the biexciton coherence leads to the phase control of the absorption, transmission and reflection properties of two weak probe and signal beams. We will also show that the exciton spin relaxation between excitonic states can affect the slow and fast light propagation of transmitted and reflected pulses with amplification in a defect slab with dispersive material. Our results show that many particle interactions due to Coulomb correlations in semiconductors can lead to the controlling of light propagation through the defect dielectric medium.

DOI
10.1088/1054-660x/24/12/125202

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The absorption, transmission and reflection properties of two incident probe and signal pulses through a defect slab doped with four-level GaAs/AlGaAs multiple quantum wells with 15 periods of 17.5 nm GaAs wells and 15 nm Al0.3 Ga0.7 as barriers is theoretically discussed. It is shown that the biexciton coherence leads to the phase control of the absorption, transmission and reflection properties of two weak probe and signal beams. We will also show that the exciton spin relaxation between excitonic states can affect the slow and fast light propagation of transmitted and reflected pulses with amplification in a defect slab with dispersive material. Our results show that many particle interactions due to Coulomb correlations in semiconductors can lead to the controlling of light propagation through the defect dielectric medium.
Phase control of two weak probe lights’ transmission and reflection based biexciton coherence in a defect dielectric medium doped by four-level GaAs/AlGaAs multiple quantum wells with 15 periods of 17.5 nm GaAs wells and 15 nm Al0.3Ga0.7As barriers is theoretically investigated. The biexciton coherence in this scheme is set up by two continuous wave control fields that couple to a resonance of biexcitons. It is shown that the transmission and reflection properties versus relative phase between applied fields can be controlled by the intensity of control fields and exciton spin relaxation between exciton states. Our studies show that many-particle interactions due to Coulomb correlations in semiconductors can be harnessed by quantum coherence in an interacting many-particle system.
In this paper, long wavelength superluminal and subluminal properties of pulse propagation in a defect slab medium doped with four-level GaAs/AlGaAs multiple quantum wells (MQWs) with 15 periods of 17.5 nm GaAs wells and 15 nm [Formula: see text] barriers is theoretically discussed. It is shown that exciton spin relaxation (ESR) between excitonic states in MQWs can be used for controlling the superluminal and subluminal light transmissions and reflections at different wavelengths. We also show that reflection and transmission coefficients depend on the thickness of the slab for the resonance and nonresonance conditions. Moreover, we found that the ESR for nonresonance condition lead to superluminal light transmission and subluminal light reflection.
We proposed a new model for controlling the optical bistability (OB) and optical multistability (OM) in a defect slab doped with four-level GaAs/AlGaAs multiple quantum wells with 15 periods of 17.5 nm GaAs wells and 15-nm Al 0.3 Ga 0.7 As barriers. The effects of biexciton energy renormalization, exciton spin relaxation, and thickness of the slab on the OB and OM properties of the defect slab were theoretically investigated. We found that the transition from OB to OM or vice versa is possible by adjusting the controllable parameters in a lab. Moreover, the transmission, reflection, and absorption properties of the weak probe light through the slab were also discussed in detail.
Controlling of the Goos-Hänchen (GH) shifts of the reflected and transmitted probe pulses through a cavity containing four-level GaAs/AlGaAs quantum dot with 15 periods of 17.5 nm GaAs wells and 25-nm Al 0.3 Ga 0.7 As barriers is investigated. Under appropriate conditions, the probe absorption can be converted to the probe gain, therefore, the controlling of negative and positive GH shift in the both reflected and transmitted probe beams can be occurred simultaneously. Our obtained results show that the group index of the probe beams could be negative or positive in both reflected and transmitted pulses. Therefore, simultaneous subluminal or superluminal light propagation in reflected and transmitted pulses can be achieved.
In this paper, optical bistability (OB) and multistability (OM) properties of a defect dielectric slab are studied. A GsAs multiple quantum well nanostructure (MQW) with 17.5 nm GaAs wells and 15 nm Al(0.3) Ga(0.7) barriers is used in the dielectric medium as a defect layer. Therefore, properties of the refractive index of the slab can be changed in the presence of MQWs. It is observed that switching from OB to OM can be obtained by controlling some external parameters. We find that the exciton spin relaxation and thickness of the slab have essential roles in adjusting the OB and OM properties of the probe light through the slab. Moreover, transmission, reflection, and absorption properties of the propagating pulse through the slab are also discussed. We show that the subluminal and superluminal light transmission or reflection can be obtained via amplification of the probe pulse through the medium. We hope that our proposed model may be suitable for the development of nanoscale devices in all-optical quantum information technology.
A double cascade-type four-level multiple-quantum-well-based exciton—biexciton transitions are proposed. The study is carried out on a 4.8-nm ZnSe single-quantum well which is embedded into ZnMgSSe cladding layers and pseudomorphically grown by molecular beam epitaxy on a (0 0 1) GaAs substrate. It is displayed that the exciton spin relaxation and relative phases between applied fields can influence the transient and steady-state behaviors of absorption, dispersion, and group velocity of two weak probe and signal fields. Also, transient behaviors of electron population of different levels are discussed. It is found that the probe or signal amplification occurs in the absence of population inversion.