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Applied Optics

All-optical switching between optical bistability and multistability in a defect dielectric medium doped with a multiple quantum well nanostructure

Seyyed Hossein Asadpour, Ghahraman Solookinejad, M. Panahi, Elnaz Ahmadi Sangachin

Published Jan 20, 2016• 5 citations
Publisher

Abstract

In this paper, optical bistability (OB) and multistability (OM) properties of a defect dielectric slab are studied. A GsAs multiple quantum well nanostructure (MQW) with 17.5 nm GaAs wells and 15 nm Al(0.3) Ga(0.7) barriers is used in the dielectric medium as a defect layer. Therefore, properties of the refractive index of the slab can be changed in the presence of MQWs. It is observed that switching from OB to OM can be obtained by controlling some external parameters. We find that the exciton spin relaxation and thickness of the slab have essential roles in adjusting the OB and OM properties of the probe light through the slab. Moreover, transmission, reflection, and absorption properties of the propagating pulse through the slab are also discussed. We show that the subluminal and superluminal light transmission or reflection can be obtained via amplification of the probe pulse through the medium. We hope that our proposed model may be suitable for the development of nanoscale devices in all-optical quantum information technology.

DOI
10.1364/ao.55.000722

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In this paper, optical bistability (OB) and multistability (OM) properties of a defect dielectric slab are studied. A GsAs multiple quantum well nanostructure (MQW) with 17.5 nm GaAs wells and 15 nm Al(0.3) Ga(0.7) barriers is used in the dielectric medium as a defect layer. Therefore, properties of the refractive index of the slab can be changed in the presence of MQWs. It is observed that switching from OB to OM can be obtained by controlling some external parameters. We find that the exciton spin relaxation and thickness of the slab have essential roles in adjusting the OB and OM properties of the probe light through the slab. Moreover, transmission, reflection, and absorption properties of the propagating pulse through the slab are also discussed. We show that the subluminal and superluminal light transmission or reflection can be obtained via amplification of the probe pulse through the medium. We hope that our proposed model may be suitable for the development of nanoscale devices in all-optical quantum information technology.
We proposed a new model for controlling the optical bistability (OB) and optical multistability (OM) in a defect slab doped with four-level GaAs/AlGaAs multiple quantum wells with 15 periods of 17.5 nm GaAs wells and 15-nm Al 0.3 Ga 0.7 As barriers. The effects of biexciton energy renormalization, exciton spin relaxation, and thickness of the slab on the OB and OM properties of the defect slab were theoretically investigated. We found that the transition from OB to OM or vice versa is possible by adjusting the controllable parameters in a lab. Moreover, the transmission, reflection, and absorption properties of the weak probe light through the slab were also discussed in detail.
In this study, we explore the optical bistability (OB) and multistability (OM) features of probe light propagating in a multiple quantum well (MQW) nanostructure embedded in a dielectric medium. It is realized that via light hole (LH) transition between valance bands and conduction band of MQWs with different electron states, the electron spin coherence can be created which can be used to controlling the OB and OM properties. It is realized that the thickness of dielectric slab can lead to adjusting the threshold of OB in different intensities of input field. Moreover, it is found that the transition from OB to OM or vice versa can be possible by selection of suitable quantity of slab thickness. In addition, the role of relative phase of applied fields on OB and OM manners is discussed in different quantities of thickness. Our results may be suitable for developing nanoscale devices in quantum information science and technologies for future applications.
Abstract Optical bistability (OB) and optical multistability (OM) due to wide applications in all-optical switching and transistors is studied in this paper. Here, we study the OB and OM properties of incident light in a defect slab doped by a GaAs quantum well (QW) nanostructure. It is shown that OB and OM features can be manipulated by spin coherence created by circular polarized laser fields in GaAs QWs. The impacts of laser field features, such as intensity, frequency detuning, and relative phase, on OB and OM are simulated. Moreover, the dependence of OB and OM features of a probe light on the thickness of the slab, then, are analyzed. It is found that the thickness of the slab can provide a new way to optimize the intensity threshold of OB and OM. We hope that our proposed model may be useful for developing all-optical devices on nanoscales.
In this paper, long wavelength superluminal and subluminal properties of pulse propagation in a defect slab medium doped with four-level GaAs/AlGaAs multiple quantum wells (MQWs) with 15 periods of 17.5 nm GaAs wells and 15 nm [Formula: see text] barriers is theoretically discussed. It is shown that exciton spin relaxation (ESR) between excitonic states in MQWs can be used for controlling the superluminal and subluminal light transmissions and reflections at different wavelengths. We also show that reflection and transmission coefficients depend on the thickness of the slab for the resonance and nonresonance conditions. Moreover, we found that the ESR for nonresonance condition lead to superluminal light transmission and subluminal light reflection.
Abstract In this paper, we have proposed a new model based on the electron tunneling effect for controlling the optical bistability (OB) and optical multistability (OM) in a defect slab structure with a quantum dot molecule (QDM). Due to the presence of the electron tunneling effect, an additional weak signal beam can be generated in the system which makes the medium becomes phase dependent. We have studied the refractive index properties of the QDM via optical susceptibility of the propagated probe light. We have discussed the relative phase effect on negative refractive index (NRI) of the QDM nanostructure due to presence of electron tunneling. Then, by using the transfer matrix method, we have studied the transmission coefficient for NRI of the QDM nanostructure. Then, we have investigated the properties of transmitted light versus incident light for realizing the OB and OM. We have considered the relative phase effect on OB and OM properties of the transmitted beam and find that the switching between them is possible when electron tunneling is present in the quantum dot. Moreover, the optical thickness of the defect layer is also investigated on OB and OM in resonance and non-resonance conditions.
The absorption, transmission and reflection properties of two incident probe and signal pulses through a defect slab doped with four-level GaAs/AlGaAs multiple quantum wells with 15 periods of 17.5 nm GaAs wells and 15 nm Al0.3 Ga0.7 as barriers is theoretically discussed. It is shown that the biexciton coherence leads to the phase control of the absorption, transmission and reflection properties of two weak probe and signal beams. We will also show that the exciton spin relaxation between excitonic states can affect the slow and fast light propagation of transmitted and reflected pulses with amplification in a defect slab with dispersive material. Our results show that many particle interactions due to Coulomb correlations in semiconductors can lead to the controlling of light propagation through the defect dielectric medium.