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Modern Physics Letters B

Long wavelength superluminal pulse propagation in a defect slab doped with GaAs/AlGaAs multiple quantum well nanostructure

M. Panahi, Ghahraman Solookinejad, Elnaz Ahmadi Sangachin, Seyyed Hossein Asadpour

Published Dec 10, 2015• 7 citations
Publisher

Abstract

In this paper, long wavelength superluminal and subluminal properties of pulse propagation in a defect slab medium doped with four-level GaAs/AlGaAs multiple quantum wells (MQWs) with 15 periods of 17.5 nm GaAs wells and 15 nm [Formula: see text] barriers is theoretically discussed. It is shown that exciton spin relaxation (ESR) between excitonic states in MQWs can be used for controlling the superluminal and subluminal light transmissions and reflections at different wavelengths. We also show that reflection and transmission coefficients depend on the thickness of the slab for the resonance and nonresonance conditions. Moreover, we found that the ESR for nonresonance condition lead to superluminal light transmission and subluminal light reflection.

DOI
10.1142/s0217984915502164

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In this paper, long wavelength superluminal and subluminal properties of pulse propagation in a defect slab medium doped with four-level GaAs/AlGaAs multiple quantum wells (MQWs) with 15 periods of 17.5 nm GaAs wells and 15 nm [Formula: see text] barriers is theoretically discussed. It is shown that exciton spin relaxation (ESR) between excitonic states in MQWs can be used for controlling the superluminal and subluminal light transmissions and reflections at different wavelengths. We also show that reflection and transmission coefficients depend on the thickness of the slab for the resonance and nonresonance conditions. Moreover, we found that the ESR for nonresonance condition lead to superluminal light transmission and subluminal light reflection.
The absorption, transmission and reflection properties of two incident probe and signal pulses through a defect slab doped with four-level GaAs/AlGaAs multiple quantum wells with 15 periods of 17.5 nm GaAs wells and 15 nm Al0.3 Ga0.7 as barriers is theoretically discussed. It is shown that the biexciton coherence leads to the phase control of the absorption, transmission and reflection properties of two weak probe and signal beams. We will also show that the exciton spin relaxation between excitonic states can affect the slow and fast light propagation of transmitted and reflected pulses with amplification in a defect slab with dispersive material. Our results show that many particle interactions due to Coulomb correlations in semiconductors can lead to the controlling of light propagation through the defect dielectric medium.
In this paper, optical bistability (OB) and multistability (OM) properties of a defect dielectric slab are studied. A GsAs multiple quantum well nanostructure (MQW) with 17.5 nm GaAs wells and 15 nm Al(0.3) Ga(0.7) barriers is used in the dielectric medium as a defect layer. Therefore, properties of the refractive index of the slab can be changed in the presence of MQWs. It is observed that switching from OB to OM can be obtained by controlling some external parameters. We find that the exciton spin relaxation and thickness of the slab have essential roles in adjusting the OB and OM properties of the probe light through the slab. Moreover, transmission, reflection, and absorption properties of the propagating pulse through the slab are also discussed. We show that the subluminal and superluminal light transmission or reflection can be obtained via amplification of the probe pulse through the medium. We hope that our proposed model may be suitable for the development of nanoscale devices in all-optical quantum information technology.
We proposed a new model for controlling the optical bistability (OB) and optical multistability (OM) in a defect slab doped with four-level GaAs/AlGaAs multiple quantum wells with 15 periods of 17.5 nm GaAs wells and 15-nm Al 0.3 Ga 0.7 As barriers. The effects of biexciton energy renormalization, exciton spin relaxation, and thickness of the slab on the OB and OM properties of the defect slab were theoretically investigated. We found that the transition from OB to OM or vice versa is possible by adjusting the controllable parameters in a lab. Moreover, the transmission, reflection, and absorption properties of the weak probe light through the slab were also discussed in detail.
Phase control of two weak probe lights’ transmission and reflection based biexciton coherence in a defect dielectric medium doped by four-level GaAs/AlGaAs multiple quantum wells with 15 periods of 17.5 nm GaAs wells and 15 nm Al0.3Ga0.7As barriers is theoretically investigated. The biexciton coherence in this scheme is set up by two continuous wave control fields that couple to a resonance of biexcitons. It is shown that the transmission and reflection properties versus relative phase between applied fields can be controlled by the intensity of control fields and exciton spin relaxation between exciton states. Our studies show that many-particle interactions due to Coulomb correlations in semiconductors can be harnessed by quantum coherence in an interacting many-particle system.
A study about the reflection and transmission of an electromagnetic pulse through a slab doped with four-level atomic system has been presented. The doped atoms are considered to be in N-configuration with a pump field and a weak probe field. An additional control field is also applied to manipulate the Raman gain of the atomic medium. The propagation of transmitted and reflected pulses at different control field strengths and different slab thickness has been studied. It is found that the transmitted and reflected pulses can be simultaneously subluminal or superluminal. These pulses can be controlled from subluminal to superluminal by adjusting the strength of the control field
The reflection and transmission of a pulse through a slab which is doped with two-level or three-level atoms are investigated theoretically. The doped atoms can be passive (absorptive) or active (gain). We find that both the reflected and transmitted pulses can be superluminal simultaneously for the slab doped with absorptive two-level atoms at the slab thickness equal to (2m+1) lambda(0) /4 sqrt[epsilon(b)] (where lambda(0) is the center wavelength of the incident pulse, and epsilon(b) is the background dielectric constant of the slab) or with active three-level atoms at any thickness. By adjusting the thickness or background dielectric constant of the slab, the reflected pulse can be controlled from superluminal to subluminal or vice versa for the slab doped with absorptive two-level or absorptive three-level atoms. The energy percentage in the reflected pulse can also be controlled by changing the thickness of the slab, and the doped atoms.