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Journal of Experimental and Theoretical Physics Letters

Coherent control of optical bistability and multistability in a triple semiconductor quantum well nanostructure

Ali Raheli, Hadi Afshari, Hamid Reza Hamedi

Published Oct 1, 2015• 2 citations
Publisher

Abstract

This paper deals with optical bistability (OB) and optical multistability (OM) behaviors for a triple semiconductor quantum well (SQW) structure driven coherently with two control fields, confined in a unidirectional ring cavity. The effect of different system parameters on OB and OM is explored. It is found that the threshold of onset of the OB can be controlled by manipulating the Rabi frequency of control fields. In this case, OB can be converted to OM. Then we investigate the effect of probe and control field detunings on OB behaviors. We found that the frequency detuning of probe field affects only the upper–lower branches of the OB curves but has no specific impact on OB threshold. By manipulating the first control field detuning, neither the OB threshold intensity nor upper–lower branches change. Finally, it is found that increasing the second control field detuning can reduce merely the OB threshold intensity, while no change happens in upper–lower OB branches. The results may be applicable in real experiments for realizing an all-optical switching or coding element in a solid-state platform.

DOI
10.1134/s0021364015200138

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This paper deals with optical bistability (OB) and optical multistability (OM) behaviors for a triple semiconductor quantum well (SQW) structure driven coherently with two control fields, confined in a unidirectional ring cavity. The effect of different system parameters on OB and OM is explored. It is found that the threshold of onset of the OB can be controlled by manipulating the Rabi frequency of control fields. In this case, OB can be converted to OM. Then we investigate the effect of probe and control field detunings on OB behaviors. We found that the frequency detuning of probe field affects only the upper–lower branches of the OB curves but has no specific impact on OB threshold. By manipulating the first control field detuning, neither the OB threshold intensity nor upper–lower branches change. Finally, it is found that increasing the second control field detuning can reduce merely the OB threshold intensity, while no change happens in upper–lower OB branches. The results may be applicable in real experiments for realizing an all-optical switching or coding element in a solid-state platform.
Abstract The problem of optical bistability (OB) and optical multistability (OM) is numerically investigated in a four-level inverted Y-type semiconductor quantum well (SQW) structure immersed in a unidirectional ring cavity. In the four-level SQW system under consideration, a closed loop configuration is coupled to the upper level through a tunable probe field. We show that the OB threshold intensity can be controlled via the intensity of coupling fields which gives rise to the absorption variation of the probe field. In addition, due to the existence of the closed-loop configuration, the OB and OM behaviors of the proposed SQW medium are dependent on the relative phase of the applied fields. It is found that the OB can be switched to OM or vice versa by properly adjusting the relative phase of the applied fields. The results may provide new possibilities in real experiments for realizing an all-optical switching or coding element in a solid-state platform.
Optical bistability (OB) and optical multistability (OM) are investigated in a triple coupled quantum wells system inside a semiconductor cavity sandwiched by distributed Bragg reflector mirrors. By proper manipulation of the optical and electrical parameters, the behaviors of OB and OM can be efficiently controlled. We show that, by tuning the tunneling rates between the quantum wells, the threshold and hysteresis cycle of OB and OM can be engineered. The effect of the incoherent pump field as well as the cooperation parameter on creation of OB is also discussed.
Abstract Optical bistability (OB) and optical multistability (OM) due to wide applications in all-optical switching and transistors is studied in this paper. Here, we study the OB and OM properties of incident light in a defect slab doped by a GaAs quantum well (QW) nanostructure. It is shown that OB and OM features can be manipulated by spin coherence created by circular polarized laser fields in GaAs QWs. The impacts of laser field features, such as intensity, frequency detuning, and relative phase, on OB and OM are simulated. Moreover, the dependence of OB and OM features of a probe light on the thickness of the slab, then, are analyzed. It is found that the thickness of the slab can provide a new way to optimize the intensity threshold of OB and OM. We hope that our proposed model may be useful for developing all-optical devices on nanoscales.
Abstract We investigate the behavior of optical bistability (OB) and optical multistability (OM) based on quantum coherence in a Landau-quantized graphene structure. Such a tunable four-level system is driven coherently by two coherent fields and an incoherent pumping field inside the unidirectional ring cavity. The influence of system parameters on the threshold of the onset of OB and OM is studied. It is found that one can efficiently control the OB/OM threshold intensity and the hysteresis loop by using the system parameters. The results obtained may be used in real experiments for the development of new types of nanoelectronic devices for realizing an all-optical switching process.
The steady-state optical bistability(OB) and optical multistability(OM) behavior in the quasi——type atomic system driven by a probe field and a coherent coupling field inside a unidirectional ring cavity are shown,and the effects of coupling-field detuning and coupling-field intensity on the OB and OM behavior are investigated. The transition from OB to OM or vice versa is found by varying the detuning of the coherent coupling field or by adjusting the intensity of the coupling field. The influence of the atomic cooperation parameter on the OM behavior is also discussed.
Abstract This work presents a theoretical study of optical bistability (OB) and multistability (OM) in a four-level N-type atomic system embedded in a unidirectional ring cavity, with particular attention to the role of quantum interference (QI) between decay channels. Going beyond earlier reports that focused on single-parameter or cavity-based control without considering quantum interference or multistability, we develop a unified framework investigating how the cooperative parameter C, probe and control field detunings (Δ₂, Δ₃), non-radiative decay rates (γ₀, γ₀₀), quantum interference (P), pump/control Rabi frequencies (Ω₁, Ω₂), and relative phase (φ) collectively govern OB and OM thresholds. Systematic analysis reveals that increasing C broadens hysteresis loops and raises thresholds, thereby enhancing switching stability, while quantum interference significantly lowers the OB threshold, enabling bistability at lower input intensities. Non-radiative decay rates γ₀ and γ₀₀, pump/control Rabi frequencies, and the relative phase φ further provide flexible switching between bistable and multistable regimes. Notably, we demonstrate that OB ↔ OM transitions can be induced through multiple independent pathways beyond phase control alone—including tuning of the cooperative parameter, non-radiative decay rates, and pump/control field intensities—extending the phase-driven switching mechanism established in earlier N-type studies to a broader, multi-parameter control framework. Furthermore, probe and control field detunings (Δ₂, Δ₃) enable dynamic tuning of the system's dispersive and absorptive properties, offering additional control over threshold behavior. These results identify practical routes for designing reconfigurable optical memory, quantum information processors, and all-optical switching devices with enhanced controllability.