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Journal of Experimental and Theoretical Physics Letters

Optical bistability in a defect slab with a negative refractive quantum dot nanostructure

M. Jamshidnejad, E. Asadi Amirabadi, Sedigheh Miraboutalebi, Seyyed Hossein Asadpour

Published Nov 1, 2016• 2 citations
Publisher

Abstract

We demonstrate optical bistability (OB) in a defect slab doped V-type four-level InGaN/GaN quantum dot nanostructure in the negative refraction frequency band. It has been shown that the OB behavior of such a quantum dot nanostructure system can be controlled by the amplitude of the driving fields and a new parameter for controlling the OB behavior as thickness of the slab medium in the negative refraction band. Meanwhile, we show that the negative refraction frequency band can be controlled by tuning electric permittivity and magnetic permeability by the amplitude of the driving fields and electron concentration in the defect slab doped. Under the numerical simulations, due to the effect of quantum coherence and interference, it is possible to switch bistability by adjusting the optimal conditions in the negative refraction frequency band, which is more practical in all-optical switching or coding elements, and technology based nanoscale devices.

DOI
10.1134/s0021364016220021

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Abstract In this paper, we have proposed a new model based on the electron tunneling effect for controlling the optical bistability (OB) and optical multistability (OM) in a defect slab structure with a quantum dot molecule (QDM). Due to the presence of the electron tunneling effect, an additional weak signal beam can be generated in the system which makes the medium becomes phase dependent. We have studied the refractive index properties of the QDM via optical susceptibility of the propagated probe light. We have discussed the relative phase effect on negative refractive index (NRI) of the QDM nanostructure due to presence of electron tunneling. Then, by using the transfer matrix method, we have studied the transmission coefficient for NRI of the QDM nanostructure. Then, we have investigated the properties of transmitted light versus incident light for realizing the OB and OM. We have considered the relative phase effect on OB and OM properties of the transmitted beam and find that the switching between them is possible when electron tunneling is present in the quantum dot. Moreover, the optical thickness of the defect layer is also investigated on OB and OM in resonance and non-resonance conditions.
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Abstract In this letter, controllable optical bistability (OB) and optical multistability (OM) in a defect slab doped with a single-layer graphene nanostructure are proposed. Our numerical results show that it is easy to control OB by Rabi frequencies of coupling fields, detuning of coherent fields, and relative phase of applied fields. Moreover, the thickness effect of the slab is considered as a new parameter for controlling the OB behaviors. It is found that the transition from OB to OM or vice versa can be made possible by the thickness of the slab and relative phase of the applied fields. We hope that our results will have potential applications in quantum information science and technology based nanoscale devices.
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Tunable phase control of the slow and fast light propagation through a defect slab medium doped by four-level InGaN/GaN quantum dot structure is demonstrated. By solving the Schrödinger and Poisson’s equations self-consistently, a spherical InGaN quantum dot with GaN barrier shell which can interact by terahertz (THz) signal field is designed numerically. It is found that the phase variation of THz signal field imparts the tunability in the group velocity of the transmitted and reflected pulses through a dielectric slab.