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Microelectronic Engineering

Fabrication of high-quality Josephson junctions for quantum computation using a self-aligned process

W CHEN

Published Mar 20, 2004• 28 citations
Publisher
DOI
10.1016/j.mee.2004.03.049

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The authors describe a process for fabrication of Nb/AlO/sub x//Nb Josephson junction circuits for quantum computation. The process involves only one etch step and incorporates electron beam lithography and a self-aligned lift-off of the dielectric resulting in a short turn-around time of 4-5 days. Deep submicron junctions of size down to 0.15 /spl times/ 0.15 /spl mu/m/sup 2/ have been fabricated and tested. Results of junction quality measurements will be presented. In particular, a subgap resistance of /spl sim/1 G/spl Omega/ measured at /spl sim/0.4 K indicates that the junction's subgap leakage should not be a limitation for quantum computation.
Abstract We present a new process for fabricating vertical NbN–MgO–NbN Josephson junctions using self-aligned silicon nitride spacers. It allows for a wide range of junction areas from 0.02 to several 100 μ m 2 . At the same time, it is suited for the implementation of complex microwave circuits with transmission line impedances ranging from < 1 Ω to > 1 k Ω . The constituent thin films and the finished junctions are characterized. The latter are shown to have high gap voltages ( > 4 mV ) and low sub-gap leakage currents.
We fabricated high quality Josephson tunneling junctions by self-aligned lift-off process. Parameters including its critical current, normal resistance and capacitance which determine the dynamic energy consumption and speed of the superconducting electronics had been measured. The critical current of a 22 × 22 μm2Junction is 1796 ± 52 μA calculated from the dependent curve between the lifetime of zero-voltage and switching current. The junction capacitance is 24.7 ± 3.9 pF obtained by observing Fiske self-resonant step when applied several Gauss magnetic field.