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Physica B Condensed Matter

Fabrication of high quality Nb/Al/AlOx/Nb stacked Josephson junctions

Paola Barbara, G. Costabile

Published Feb 1, 1994• 3 citations
Publisher
DOI
10.1016/0921-4526(94)90364-6

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We have developed a combined photolithography and electron-beam lithography fabrication process for sub-\mum to \mum-size Nb/Al-AlOx/Nb Josephson junctions. In order to define the junction size and protect its top electrode during anodic oxidation, we developed and used the new concept of an aluminum hard mask. Josephson junctions of sizes down to 0.5 \mum2 have been fabricated and thoroughly characterized. We found that they have a very high quality, which is witnessed by the IV curves with quality parameters Vm > 50 mV and Vgap = 2.8 mV at 4.2 K, as well as IcRN products of 1.75-1.93 mV obtained at lower temperatures. In order to test the usability of our fabrication process for superconducting quantum bits, we have also designed, fabricated and experimentally investigated phase qubits made of these junctions. We found a relaxation time of T1 = 26 ns and a dephasing time of T2 = 21 ns.

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Nb/Al-AlOx/Nb Josephson junctions are widely used in superconducting quantum interference devices and rapid single flux quantum (RSFQ) circuits. Very large-scale RSFQ integration often has a strict requirement on wafer-scale junction qualities. In particular, Nb film stress in Nb/Al-AlOx/Nb trilayer based Josephson junctions is a critical factor affecting their qualities. In this work, we develop a multi-step sputtering process to prepare Nb films with different combinations of stress and roughness to investigate the correlation between Nb film stress and junction quality. In particular, this method allows us to prepare Nb films with almost the same roughness but different stress, a key factor to study solely the influence of stress on junction qualities. Our measurements indicate that within a very tight range of film roughness (less than 2 nm), tensile film stress is found to decrease the quality of Nb/Al-AlOx/Nb Josephson junctions and larger film roughness has a positive effect on junction quality. By decreasing the total tensile stress and increasing the film roughness properly, we fabricated Nb/Al-AlOx/Nb Josephson junctions with a high quality factor characterized by Rsg/RN(30 on average). The minimum size of junctions was 1 μm.

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Fabrication of Nb/AlOx/Al/AlOx/Nb junctions for voltage standard applications

Masaaki Maezawa, Chiharu Urano, Nobu‐Hisa Kaneko +1 more

Physica C Superconductivity•Jun 3, 2007•4 citations
We have developed a combined photolithography and electron-beam lithography fabrication process for sub-\mum to \mum-size Nb/Al-AlOx/Nb Josephson junctions. In order to define the junction size and protect its top electrode during anodic oxidation, we developed and used the new concept of an aluminum hard mask. Josephson junctions of sizes down to 0.5 \mum2 have been fabricated and thoroughly characterized. We found that they have a very high quality, which is witnessed by the IV curves with quality parameters Vm > 50 mV and Vgap = 2.8 mV at 4.2 K, as well as IcRN products of 1.75-1.93 mV obtained at lower temperatures. In order to test the usability of our fabrication process for superconducting quantum bits, we have also designed, fabricated and experimentally investigated phase qubits made of these junctions. We found a relaxation time of T1 = 26 ns and a dephasing time of T2 = 21 ns.
Nb/Al-AlOx/Nb Josephson junctions are widely used in superconducting quantum interference devices and rapid single flux quantum (RSFQ) circuits. Very large-scale RSFQ integration often has a strict requirement on wafer-scale junction qualities. In particular, Nb film stress in Nb/Al-AlOx/Nb trilayer based Josephson junctions is a critical factor affecting their qualities. In this work, we develop a multi-step sputtering process to prepare Nb films with different combinations of stress and roughness to investigate the correlation between Nb film stress and junction quality. In particular, this method allows us to prepare Nb films with almost the same roughness but different stress, a key factor to study solely the influence of stress on junction qualities. Our measurements indicate that within a very tight range of film roughness (less than 2 nm), tensile film stress is found to decrease the quality of Nb/Al-AlOx/Nb Josephson junctions and larger film roughness has a positive effect on junction quality. By decreasing the total tensile stress and increasing the film roughness properly, we fabricated Nb/Al-AlOx/Nb Josephson junctions with a high quality factor characterized by Rsg/RN(30 on average). The minimum size of junctions was 1 μm.