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Bulletin of the American Physical Society

Investigation of surface induced loss mechanisms in high-quality superconducting Nb resonators

Jeroen Verjauw, Massimo Mongillo, Anton Potočnik, Rohith Acharya, Antoine Pacco, Tsvetan Ivanov, Danny Wan, Laurent Souriau, Julien Jussot, Arame Thiam, Johan Swerts, Xiaoyu Piao, Sébastien Couet, B. Govoreanu, Iuliana P. Radu, Marc Heyns

Published Mar 6, 2020• 0 citations
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To improve the performance of state-of-the-art superconducting quantum devices, microwave loss due to defects at amorphous interfacial layers must be reduced, via proper surface treatment. The authors study niobium resonators after removing native oxides by HF etching, which reduces losses about tenfold and yields a quality factor of $7\ifmmode\times\else\texttimes\fi{}{10}^{6}$ in the single-photon limit. Losses reappear as oxides form upon exposure to air; Nb2{}_{2}2​O5{}_{5}5​ is the only surface oxide that grows significantly in the first week. These findings are of interest for a panoply of devices, inluding superconducting qubits, quantum-limited amplifiers, microwave kinetic-inductance detectors, and single-photon detectors.
Niobium and aluminum have been widely used to realize superconducting resonators and qubits. However, the native oxide at the metal air interface limits the devices results. This layer is highly disordered, and it induces losses limiting the performances of the resonators or qubits. Recently, tantalum led to great improvement in qubit relaxation time. This improvement has been attributed to a thinner and less disordered oxide layer compared to Nb and Al. This study is aimed to limit the formation of the oxide layer, by the introduction of novel superconducting materials such as rhenium or by encapsulating the Nb surface with other superconducting materials such as Ta, Al, Re or other non-superconducting materials such as Au. To better understand the results, we are realizing these studies on coplanar waveguide resonators where the relation between surface losses and quality factor is clear. We are also analyzing different fabrication techniques to completely characterize our devices, linking material properties to the performances. In this work we are also varying the participation ratio of the devices in order to extract with higher fidelity and precision the losses introduced by the involved interfaces.